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    Arrays of capacitors, methods used in forming integrated circuitry, and methods used in forming an array of capacitors
    1.
    发明授权
    Arrays of capacitors, methods used in forming integrated circuitry, and methods used in forming an array of capacitors 有权

    公开(公告)号：US11195838B2

    公开(公告)日：2021-12-07

    申请号：US16420582

    申请日：2019-05-23

    Applicant: Micron Technology, Inc.

    Inventor： Scott L. Light

    IPC: H01L27/108 ,  H01L27/11502 ,  H01L49/02

    Abstract: A method used in forming integrated circuitry comprises forming an array of structures elevationally through a stack comprising first and second materials. The structures project vertically relative to an outermost portion of the first material. Energy is directed onto vertically-projecting portions of the structures and onto the second material in a direction that is angled from vertical and that is along a straight line between immediately-adjacent of the structures to form openings into the second material that are individually between the immediately-adjacent structures along the straight line. Other embodiments, including structure independent of method, are disclosed.

    Methods of forming a pattern on a substrate
    5.
    发明授权
    Methods of forming a pattern on a substrate 有权
    在基板上形成图案的方法

    公开(公告)号：US09153458B2

    公开(公告)日：2015-10-06

    申请号：US14064261

    申请日：2013-10-28

    Applicant: Micron Technology, Inc.

    Inventor： Scott L. Light ,  Anton deVilliers

    IPC: H01L21/311 ,  H01L21/033

    CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/0338

    Abstract: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.

    Abstract translation: 在衬底上形成图案的方法包括在下面的衬底上形成四个第一线的重复图案。 四条第二条线的重复图案在四条第一条线的重复图案的正上方横跨形成。 四条第二条线的第一次交替从第一条线路上被接收除去。 在四条第二条线的第一次交替已经被去除之后，四条第一条线的交替的高度暴露的部分使用四条第二条线的剩余的第二交替作为掩模被去除到下面的基底。 另外的实施例被公开和预期。

    LITHOGRAPHY METHODS, METHODS FOR FORMING PATTERNING TOOLS AND PATTERNING TOOLS
    6.
    发明申请
    LITHOGRAPHY METHODS, METHODS FOR FORMING PATTERNING TOOLS AND PATTERNING TOOLS 有权
    图形方法，形成图案工具和绘图工具的方法

    公开(公告)号：US20140106280A1

    公开(公告)日：2014-04-17

    申请号：US14107767

    申请日：2013-12-16

    Applicant: Micron Technology, Inc.

    Inventor： Jianming Zhou ,  Scott L. Light ,  David Kewley ,  Prasanna Srinivasan ,  Anton deVilliers

    IPC: G03F7/20

    CPC classification number: G03F7/20 ,  G03F1/26 ,  G03F1/32 ,  G03F7/70433 ,  G03F7/70883

    Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.

    Abstract translation: 描述了光刻方法，用于形成图案形成工具的方法和图案形成工具。 一种这样的图案形成工具包括在使用时在透镜上形成第一衍射图像的有源区域和在使用时在透镜上形成第二衍射图像的非活性区域。 非活性区域包括形成在图案形成工具的基本上透明的材料中的相移特征的图案。 如所描述的图案化工具和方法可用于补偿透镜失真，例如局部加热等影响。

    Methods Of Forming a Pattern on a Substrate
    7.
    发明申请
    Methods Of Forming a Pattern on a Substrate 有权
    在基材上形成图案的方法

    公开(公告)号：US20140051251A1

    公开(公告)日：2014-02-20

    申请号：US14064261

    申请日：2013-10-28

    Applicant: Micron Technology, Inc.

    Inventor： Scott L. Light ,  Anton deVilliers

    IPC: H01L21/311

    CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/0338

    Abstract: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.

    Abstract translation: 在衬底上形成图案的方法包括在下面的衬底上形成四个第一线的重复图案。 四条第二条线的重复图案在四条第一条线的重复图案的正上方横跨形成。 四条第二条线的第一次交替从第一条线路上被接收除去。 在四条第二条线的第一次交替已经被去除之后，四条第一条线的交替的高度暴露的部分使用四条第二条线的剩余的第二交替作为掩模被去除到下面的基底。 另外的实施例被公开和预期。

    Methods of forming a pattern
    9.
    发明授权
    Methods of forming a pattern 有权

    公开(公告)号：US10522395B1

    公开(公告)日：2019-12-31

    申请号：US16107407

    申请日：2018-08-21

    Applicant: Micron Technology, Inc.

    Inventor： Scott L. Light ,  Richard J. Hill

    IPC: H01L23/52 ,  H01L21/768 ,  H01L21/033 ,  H01L23/522 ,  H01L23/528

    Abstract: A metal pattern comprising interconnected small metal segments, medium metal segments, and large metal segments. At least one of the small metal segments comprises a pitch of less than about 45 nm and the small metal segments, medium metal segments, and large metal segments are separated from one another by variable spacing. Semiconductor devices comprising initial metallizations, systems comprising the metal pattern, and methods of forming a pattern are also disclosed.

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