公开(公告)号：US11672118B2

公开(公告)日：2023-06-06

申请号：US17013047

申请日：2020-09-04

Applicant: Micron Technology, Inc.

Inventor： Shyam Surthi ,  Richard J. Hill ,  Gurtej S. Sandhu ,  Byeung Chul Kim ,  Francois H. Fabreguette ,  Chris M. Carlson ,  Michael E. Koltonski ,  Shane J. Trapp

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: An electronic device comprising a cell region comprising stacks of alternating dielectric materials and conductive materials. A pillar region is adjacent to the cell region and comprises storage node segments adjacent to adjoining oxide materials and adjacent to a tunnel region. The storage node segments are separated by a vertical portion of the tunnel region. A high-k dielectric material is adjacent to the conductive materials of the cell region and to the adjoining oxide materials of the pillar region. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.

公开(公告)号：US10930548B2

公开(公告)日：2021-02-23

申请号：US16250778

申请日：2019-01-17

Applicant: Micron Technology, Inc.

Inventor： Shane J. Trapp ,  Timothy A. Quick ,  Byeung Chul Kim

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3065

Abstract: A method of forming an apparatus comprises conformally forming a spacer material over and between structures overlying a base structure. A liner material is conformally formed on the spacer material. The spacer material is selectively etchable relative to the liner material through exposure to at least one etchant. Portions of the liner material and the spacer material overlying upper surfaces of the structures and upper surfaces of the base structure horizontally between the structures are selectively removed to form spacer structures flanking side surfaces of the structures. An apparatus and an electronic system are also described.

公开(公告)号：US20200235004A1

公开(公告)日：2020-07-23

申请号：US16250778

申请日：2019-01-17

Applicant: Micron Technology, Inc.

Inventor： Shane J. Trapp ,  Timothy A. Quick ,  Byeung Chul Kim

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/02

Abstract: A method of forming an apparatus comprises conformally forming a spacer material over and between structures overlying a base structure. A liner material is conformally formed on the spacer material. The spacer material is selectively etchable relative to the liner material through exposure to at least one etchant. Portions of the liner material and the spacer material overlying upper surfaces of the structures and upper surfaces of the base structure horizontally between the structures are selectively removed to form spacer structures flanking side surfaces of the structures. An apparatus and an electronic system are also described.

公开(公告)号：US20170263563A1

公开(公告)日：2017-09-14

申请号：US15601919

申请日：2017-05-22

Applicant: Micron Technology, Inc.

Inventor： Ashim Dutta ,  Mohd Kamran Akhtar ,  Shane J. Trapp

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/4821 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

公开(公告)号：US08999852B2

公开(公告)日：2015-04-07

申请号：US13712806

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。

公开(公告)号：US08889558B2

公开(公告)日：2014-11-18

申请号：US13712820

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Ranjan Khurana ,  Anton J. deVillers ,  Kevin J. Torek ,  Shane J. Trapp ,  Scott L. Light ,  James M. Buntin

IPC: H01L21/308 ,  B44C1/22 ,  H01L21/302

CPC classification number: H01L21/3086 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.

Abstract translation: 在衬底上形成图案的方法包括在衬底的材料中形成开口。 开口被加宽以与紧邻的开口接合以在扩宽之后形成包括材料的间隔柱。 公开了其他实施例。

公开(公告)号：US20140162457A1

公开(公告)日：2014-06-12

申请号：US13712806

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/311 ,  H01L21/31

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。

公开(公告)号：US09984977B2

公开(公告)日：2018-05-29

申请号：US15601919

申请日：2017-05-22

Applicant: Micron Technology, Inc.

Inventor： Ashim Dutta ,  Mohd Kamran Akhtar ,  Shane J. Trapp

IPC: H01L23/482 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/4821 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

公开(公告)号：US09679852B2

公开(公告)日：2017-06-13

申请号：US14321466

申请日：2014-07-01

Applicant: Micron Technology, Inc.

Inventor： Ashim Dutta ,  Mohd Kamran Akhtar ,  Shane J. Trapp

IPC: H01L23/482 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/4821 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

公开(公告)号：US20140162459A1

公开(公告)日：2014-06-12

申请号：US13712830

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/308

CPC classification number: H01L21/308 ,  H01L21/0337 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

Abstract: A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.

Abstract translation: 在衬底上形成图案的方法包括在第二材料中形成的第一开口的高度向外突出形成间隔开的第一材料包括柱。 在第一含材料柱的侧壁上形成侧壁间隔物。 侧壁间隔物在第一含材料柱的横向向外形成间隙空间。 间隙空间由四个第一材料包括柱的侧壁上的纵向接触的侧壁间隔单独包围。