公开(公告)号：US20140133243A1

公开(公告)日：2014-05-15

申请号：US14158215

申请日：2014-01-17

Applicant: MOSAID TECHNOLOGIES INCORPORATED

Inventor： Peter B. GILLINGHAM ,  Graham ALLAN

IPC: G11C16/10

CPC classification number: G06F3/061 ,  G06F3/0655 ,  G06F3/0688 ,  G06F13/1694 ,  G11C7/1045 ,  G11C7/1078 ,  G11C7/1093 ,  G11C7/22 ,  G11C14/0018 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/28 ,  G11C16/32 ,  H03K2005/00247 ,  Y02D10/14

Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.

Abstract translation: 描述了用于存储器件的时钟模式配置电路。 存储器系统包括彼此串行连接的任何数量的存储器件，其中每个存储器件接收时钟信号。 可以将时钟信号并行地提供给所有存储器件，或者通过公共时钟输入从存储器件到存储器器件串行提供。 每个存储器件中的时钟模式配置电路被设置为用于接收并行时钟信号的并行模式，以及用于从先前存储器件接收源同步时钟信号的串行模式。 根据设置的工作模式，数据输入电路将被配置为相应的数据信号格式，相应的时钟输入电路将被启用或禁用。 通过感测提供给每个存储器件的参考电压的电压电平来设置并联模式和串行模式。

公开(公告)号：US20130235659A1

公开(公告)日：2013-09-12

申请号：US13871487

申请日：2013-04-26

Applicant: MOSAID TECHNOLOGIES INCORPORATED

Inventor： Peter B. GILLINGHAM ,  Graham ALLAN

IPC: G11C16/10

CPC classification number: G06F3/061 ,  G06F3/0655 ,  G06F3/0688 ,  G06F13/1694 ,  G11C7/1045 ,  G11C7/1078 ,  G11C7/1093 ,  G11C7/22 ,  G11C14/0018 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/28 ,  G11C16/32 ,  H03K2005/00247 ,  Y02D10/14

Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.