公开(公告)号：US10995417B2

公开(公告)日：2021-05-04

申请号：US15739314

申请日：2016-06-30

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

公开(公告)号：US20210222314A1

公开(公告)日：2021-07-22

申请号：US17220540

申请日：2021-04-01

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, JR. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

IPC: C25D7/12 ,  C25D3/16 ,  C25D3/56

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

公开(公告)号：US20240018678A1

公开(公告)日：2024-01-18

申请号：US18372236

申请日：2023-09-25

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, JR. ,  Kyle Whitten ,  Richard Hurtubise ,  John Commander ,  Eric Rouya

IPC: C25D3/38 ,  C25D7/12 ,  C25D17/00

CPC classification number: C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885

Abstract: An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.

公开(公告)号：US20190390356A1

公开(公告)日：2019-12-26

申请号：US16334168

申请日：2017-09-21

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, Jr. ,  Kyle Whitten ,  Richard Hurtubise ,  John Commander ,  Eric Rouya

IPC: C25D3/38 ,  C25D7/12 ,  C25D17/00

Abstract: An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.

公开(公告)号：US10294574B2

公开(公告)日：2019-05-21

申请号：US14854561

申请日：2015-09-15

Applicant: MacDermid Enthone Inc.

Inventor： Kyle Whitten ,  Vincent Paneccasio, Jr. ,  Thomas Richardson ,  Eric Rouya

IPC: C25D3/38 ,  C25D7/12

Abstract: A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.

公开(公告)号：US11434578B2

公开(公告)日：2022-09-06

申请号：US17220540

申请日：2021-04-01

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

公开(公告)号：US20200040478A1

公开(公告)日：2020-02-06

申请号：US15739314

申请日：2016-06-30

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun

IPC: C25D7/12 ,  C25D3/56 ,  C25D3/16

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.