Actinic-radiation-curing hot-melt pressure-sensitive composition
    1.
    发明授权
    Actinic-radiation-curing hot-melt pressure-sensitive composition 失效
    光化辐射固化热熔压敏组合物

    公开(公告)号:US5384341A

    公开(公告)日:1995-01-24

    申请号:US172805

    申请日:1993-12-27

    CPC分类号: C08F299/00 C09J155/005

    摘要: There is disclosed an actinic-radiation-curing, hot-melt pressure-sensitive adhesive composition, which comprises a mixture in a limited mixing ratio of an acrylic high-molecular-weight polymer that is made up of main chain having a molecular weight of 8,000 to 100,000 and a glass transition temperature of -75.degree. to -20.degree. C., and branched chain, in which the main chains and/or branched chains have or at least one ethylenically unsaturated group; and a low-molecular-weight polymer having a molecular weight of 500 to 8,000 and a glass transition temperature of lower than 100.degree. C., which polymer has or does not have an ethylenically unsaturated group in the molecule.

    摘要翻译: 公开了一种光化辐射固化的热熔压敏粘合剂组合物,其包含由具有8,000分子量的主链组成的丙烯酸类高分子量聚合物的有限混合比例的混合物 至100,000,玻璃化转变温度为-75℃至-20℃,支链和/或支链具有至少一个烯键式不饱和基团; 和分子量为500〜8000,玻璃化转变温度低于100℃的低分子量聚合物,该分子内具有或不具有烯键式不饱和基团。

    Thermosetting powder paint, coating method using said paint, and article
coated with said paint
    4.
    发明授权
    Thermosetting powder paint, coating method using said paint, and article coated with said paint 失效
    热固性粉末涂料,使用所述涂料的涂布方法和涂有所述涂料的制品

    公开(公告)号:US5728790A

    公开(公告)日:1998-03-17

    申请号:US510848

    申请日:1995-08-03

    摘要: The present invention relates to a thermosetting powder paint comprising, as essential components, (A) a copolymer of particular composition composed of a glycidyl group-containing monomer, styrene and other monomer copolymerizable therewith and, as curing agents capable of reacting with the component (A) to crosslink the component (A), (B) an aliphatic polycarboxylic acid and (C) a linear anhydride of an aliphatic polycarboxylic acid; a coating method using the above thermosetting powder paint; and a coated article obtained by using the above thermosetting powder paint. The above thermosetting powder paint, when used as a paint for automobile, has excellent storage stability and gives a coating film having excellent appearance, properties, weathering resistance and yellowing resistance; therefore, the paint can be favorably used particularly as an top coat and an intermediate coat for automobile and its parts.

    摘要翻译: 本发明涉及一种热固性粉末涂料,其包含作为必要组分的(A)由含缩水甘油基的单体,苯乙烯和可与其共聚的其它单体组成的特定组成的共聚物,以及作为能够与组分反应的固化剂 A)使组分(A),(B)脂族多元羧酸和(C)脂族多元羧酸的直链酸酐交联; 使用上述热固性粉末涂料的涂布方法; 和通过使用上述热固性粉末涂料获得的涂布制品。 上述热固性粉末涂料在用作汽车涂料时具有优异的储存稳定性,并且具有优异的外观,性能,耐候性和耐黄变性的涂膜。 因此,该涂料可以特别用作汽车及其部件的顶涂层和中间涂层。

    Powder paint composition
    5.
    发明授权
    Powder paint composition 失效
    粉末涂料组成

    公开(公告)号:US6008301A

    公开(公告)日:1999-12-28

    申请号:US969760

    申请日:1997-11-13

    IPC分类号: C08L73/02 C09D133/06 C08F8/14

    CPC分类号: C09D133/068 C08L73/02

    摘要: A thermosetting powder paint composition is disclosed which can realize simultaneous manifestation of I) excellent stability before film forming (in storage), II) excellent low temperature melting property/low temperature curing property in forming a film, and III) excellent film properties and physical properties after film forming;and which comprises (A) a copolymer component which is obtained by radical polymerization in a reaction system containing (a-1) an ethylenically unsaturated monomer having a glycidyl group and a unsaturated double bond in the molecule, (a-2) styrene, and (a-3) the other monomer in a specific condition, (B) a curing agent component which is a linear acid anhydride of an aliphatic divalent carboxylic acid having a specific structure, and (C) a curing catalyst component having a specific structure.

    摘要翻译: 公开了可以实现I)在成膜(储存)之前优异的稳定性的同时表现的热固性粉末涂料组合物,II)在形成膜时具有优异的低温熔融性/低温固化性,以及III)优异的膜性能和物理性 成膜后的性能; (A-1)在分子中含有缩水甘油基和不饱和双键的烯键式不饱和单体(a-2)苯乙烯,和(A-1)共聚物成分, (a-3)特定条件下的其它单体,(B)作为具有特定结构的脂肪族二元羧酸的线性酸酐的固化剂成分,(C)具有特定结构的固化催化剂成分。

    Semiconductor Single Crystal Manufacturing Device and Manufacturing Method
    6.
    发明申请
    Semiconductor Single Crystal Manufacturing Device and Manufacturing Method 有权
    半导体单晶制造装置及制造方法

    公开(公告)号:US20090120352A1

    公开(公告)日:2009-05-14

    申请号:US12083896

    申请日:2006-10-11

    IPC分类号: C30B15/14

    摘要: In order to provide a semiconductor single crystal manufacturing device and a manufacturing method using a CZ method wherein the resistivity and oxygen concentration of a silicon single crystal can be controlled and wherein a single crystal yield can be improved, in the present invention, there is provided a wall 10 which defines a chamber inner wall 1c of a chamber 1, a crucible 2 and a heater 3. The wall 10 is formed by three members, namely, a single crystal side flow-straightening member 11, a melt surface side flow-straightening member 12 and a heater side flow-straightening member 13, which are connected to form a purge gas directing path 100. When the semiconductor single crystal is pulled, a flow speed of a purge gas that passes through the vicinity of the surface of the melt in a quartz crucible 3 is controlled from 0.2 to 0.35 m/min by purge gas introduction means.

    摘要翻译: 为了提供半导体单晶制造装置和使用可以控制硅单晶的电阻率和氧浓度并且其中单晶产率可以提高的CZ方法的制造方法,在本发明中, 壁10,其限定室1的室内壁1c,坩埚2和加热器3.壁10由三个构件形成,即单晶侧流动整流构件11,熔体表面侧流动整流构件11, 矫直构件12和加热器侧流动矫正构件13,其被连接以形成吹扫气体引导路径100.当拉出半导体单晶时,穿过该表面的附近的吹扫气体的流速 通过吹扫气体引入装置将石英坩埚3中的熔体从0.2至0.35m / min控制。

    Semiconductor single crystal manufacturing device and manufacturing method
    8.
    发明授权
    Semiconductor single crystal manufacturing device and manufacturing method 有权
    半导体单晶制造装置及其制造方法

    公开(公告)号:US08187383B2

    公开(公告)日:2012-05-29

    申请号:US12083896

    申请日:2006-10-11

    IPC分类号: C30B15/02

    摘要: In order to provide a semiconductor single crystal manufacturing device and a manufacturing method using a CZ method wherein the resistivity and oxygen concentration of a silicon single crystal can be controlled and wherein a single crystal yield can be improved, in the present invention, there is provided a wall 10 which defines a chamber inner wall 1c of a chamber 1, a crucible 2 and a heater 3. The wall 10 is formed by three members, namely, a single crystal side flow-straightening member 11, a melt surface side flow-straightening member 12 and a heater side flow-straightening member 13, which are connected to form a purge gas directing path 100. When the semiconductor single crystal is pulled, a flow speed of a purge gas that passes through the vicinity of the surface of the melt in a quartz crucible 3 is controlled.

    摘要翻译: 为了提供半导体单晶制造装置和使用可以控制硅单晶的电阻率和氧浓度并且其中单晶产率可以提高的CZ方法的制造方法,在本发明中, 壁10,其限定室1的室内壁1c,坩埚2和加热器3.壁10由三个构件形成,即单晶侧流动整流构件11,熔体表面侧流动整流构件11, 矫直构件12和加热器侧流动矫正构件13,其被连接以形成吹扫气体引导路径100.当拉出半导体单晶时,穿过该表面的附近的吹扫气体的流速 在石英坩埚3中熔化被控制。