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1.发明申请公开(公告)号：US20090120352A1
公开(公告)日：2009-05-14
申请号：US12083896
申请日：2006-10-11
IPC分类号： C30B15/14
CPC分类号： C30B35/00 , C30B15/00 , C30B15/20 , C30B29/06 , Y10T117/1068
摘要： In order to provide a semiconductor single crystal manufacturing device and a manufacturing method using a CZ method wherein the resistivity and oxygen concentration of a silicon single crystal can be controlled and wherein a single crystal yield can be improved, in the present invention, there is provided a wall 10 which defines a chamber inner wall 1c of a chamber 1, a crucible 2 and a heater 3. The wall 10 is formed by three members, namely, a single crystal side flow-straightening member 11, a melt surface side flow-straightening member 12 and a heater side flow-straightening member 13, which are connected to form a purge gas directing path 100. When the semiconductor single crystal is pulled, a flow speed of a purge gas that passes through the vicinity of the surface of the melt in a quartz crucible 3 is controlled from 0.2 to 0.35 m/min by purge gas introduction means.
摘要翻译： 为了提供半导体单晶制造装置和使用可以控制硅单晶的电阻率和氧浓度并且其中单晶产率可以提高的CZ方法的制造方法，在本发明中， 壁10，其限定室1的室内壁1c，坩埚2和加热器3.壁10由三个构件形成，即单晶侧流动整流构件11，熔体表面侧流动整流构件11， 矫直构件12和加热器侧流动矫正构件13，其被连接以形成吹扫气体引导路径100.当拉出半导体单晶时，穿过该表面的附近的吹扫气体的流速 通过吹扫气体引入装置将石英坩埚3中的熔体从0.2至0.35m / min控制。
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2.发明授权公开(公告)号：US08187383B2
公开(公告)日：2012-05-29
申请号：US12083896
申请日：2006-10-11
IPC分类号： C30B15/02
CPC分类号： C30B35/00 , C30B15/00 , C30B15/20 , C30B29/06 , Y10T117/1068
摘要： In order to provide a semiconductor single crystal manufacturing device and a manufacturing method using a CZ method wherein the resistivity and oxygen concentration of a silicon single crystal can be controlled and wherein a single crystal yield can be improved, in the present invention, there is provided a wall 10 which defines a chamber inner wall 1c of a chamber 1, a crucible 2 and a heater 3. The wall 10 is formed by three members, namely, a single crystal side flow-straightening member 11, a melt surface side flow-straightening member 12 and a heater side flow-straightening member 13, which are connected to form a purge gas directing path 100. When the semiconductor single crystal is pulled, a flow speed of a purge gas that passes through the vicinity of the surface of the melt in a quartz crucible 3 is controlled.
摘要翻译： 为了提供半导体单晶制造装置和使用可以控制硅单晶的电阻率和氧浓度并且其中单晶产率可以提高的CZ方法的制造方法，在本发明中， 壁10，其限定室1的室内壁1c，坩埚2和加热器3.壁10由三个构件形成，即单晶侧流动整流构件11，熔体表面侧流动整流构件11， 矫直构件12和加热器侧流动矫正构件13，其被连接以形成吹扫气体引导路径100.当拉出半导体单晶时，穿过该表面的附近的吹扫气体的流速 在石英坩埚3中熔化被控制。
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公开(公告)号：US20080078322A1
公开(公告)日：2008-04-03
申请号：US11863894
申请日：2007-09-28
IPC分类号： C30B15/00
CPC分类号： C30B15/00 , C30B11/003 , C30B15/14 , C30B29/06 , C30B35/00 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068
摘要： A graphite member utilized in a pulling device for pulling a silicon single crystal is provided. An edge part of the graphite member is rounded off which is exposed to a reactive gas. The graphite member may comprise: a plate part having a thickness of ‘t’ wherein a curvature radius of ‘r’ satisfies the formula: t/8≦r≦t/4.
摘要翻译： 提供了一种用于牵引单晶硅的牵引装置中的石墨部件。 石墨构件的边缘部分被倒圆，其暴露于反应性气体。 石墨构件可以包括：具有“t”厚度的板部分，其中曲率半径'r'满足公式：t / 8 <= r <= t / 4。
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公开(公告)号：US09212431B2
公开(公告)日：2015-12-15
申请号：US11863894
申请日：2007-09-28
CPC分类号： C30B15/00 , C30B11/003 , C30B15/14 , C30B29/06 , C30B35/00 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068
摘要： A graphite member utilized in a pulling device for pulling a silicon single crystal is provided. An edge part of the graphite member is rounded off which is exposed to a reactive gas. The graphite member may comprise: a plate part having a thickness of ‘t’ wherein a curvature radius of ‘r’ satisfies the formula: t/8≦r≦t/4.
摘要翻译： 提供了用于牵引单晶硅的牵引装置中的石墨部件。 石墨构件的边缘部分被倒圆，其暴露于反应性气体。 石墨构件可以包括：具有“t”厚度的板部分，其中曲率半径'r'满足公式：t / 8＆nlE; r＆nlE; t / 4。
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公开(公告)号：US08110042B2
公开(公告)日：2012-02-07
申请号：US12515730
申请日：2008-05-07
申请人： Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Tsuneaki Tomonaga , Yasuyuki Ohta , Toshimichi Kubota , Shinsuke Nishihara
发明人： Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Tsuneaki Tomonaga , Yasuyuki Ohta , Toshimichi Kubota , Shinsuke Nishihara
CPC分类号： C30B15/02 , C30B29/06 , Y10T117/1032 , Y10T117/1072
摘要： Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen concentration of the monocrystal is decreased as a flow rate of the inactive gas at a position directly above a free surface of the dopant-added melt is increased when the monocrystal is manufactured with a gas flow volume in the chamber being in the range of 40 L/min to 400 L/min and an inner pressure in the chamber being in the range of 5332 Pa to 79980 Pa. Based on the relationship, oxygen concentration is elevated to manufacture the monocrystal having a desirable oxygen concentration. Because the oxygen concentration is controlled under a condition corresponding to a condition where the gas flow rate is rather slow, the difference between a desirable oxygen concentration profile of the monocrystal and an actual oxygen concentration profile is reduced.
摘要翻译： 使用提拉装置，基于在单位的氧浓度作为位置处的惰性气体的流量减小的关系来控制单体在提升方向上的预定位置的氧浓度 当制造单晶体时，在腔室中的气体流动体积在40L / min至400L / min的范围内，并且腔室中的内部压力在 范围为5332Pa〜79980Pa。根据该关系，提高氧浓度，制造具有所需氧浓度的单晶。 由于氧浓度在与气体流量比较慢的条件相对应的条件下进行控制，所以单晶的理想的氧浓度分布与实际的氧浓度分布之间的差减小。
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公开(公告)号：US20100050931A1
公开(公告)日：2010-03-04
申请号：US12515730
申请日：2008-05-07
申请人： Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Tsuneaki Tomonaga , Yasuyuki Ohta , Toshimichi Kubota , Shinsuke Nishihara
发明人： Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Tsuneaki Tomonaga , Yasuyuki Ohta , Toshimichi Kubota , Shinsuke Nishihara
IPC分类号： C30B15/00
CPC分类号： C30B15/02 , C30B29/06 , Y10T117/1032 , Y10T117/1072
摘要： Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen concentration of the monocrystal is decreased as a flow rate of the inactive gas at a position directly above a free surface of the dopant-added melt is increased when the monocrystal is manufactured with a gas flow volume in the chamber being in the range of 40 L/min to 400 L/min and an inner pressure in the chamber being in the range of 5332 Pa to 79980 Pa. Based on the relationship, oxygen concentration is elevated to manufacture the monocrystal having a desirable oxygen concentration. Because the oxygen concentration is controlled under a condition corresponding to a condition where the gas flow rate is rather slow, the difference between a desirable oxygen concentration profile of the monocrystal and an actual oxygen concentration profile is reduced.
摘要翻译： 使用提拉装置，基于在单位的氧浓度作为位置处的惰性气体的流量减小的关系来控制单体在提升方向上的预定位置的氧浓度 当制造单晶体时，在腔室中的气体流动体积在40L / min至400L / min的范围内，并且腔室中的内部压力在 范围为5332Pa〜79980Pa。根据该关系，提高氧浓度，制造具有所需氧浓度的单晶。 由于氧浓度在与气体流量比较慢的条件相对应的条件下进行控制，所以单晶的理想的氧浓度分布与实际的氧浓度分布之间的差减小。
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7.发明授权Method of manufacturing monocrystal, flow straightening cylinder, and monocrystal pulling-up device 有权制造单晶，流动矫直圆筒和单晶提拉装置的方法公开(公告)号：US08961686B2
公开(公告)日：2015-02-24
申请号：US12678400
申请日：2008-07-25
CPC分类号： C30B15/04 , C30B15/20 , C30B29/06 , Y10T117/1064 , Y10T117/1072
摘要： For manufacturing a monocrystal, a monocrystal pulling-up device controls pressure within a flow straightening cylinder to be from 33331 Pa to 79993 Pa and a flow velocity of inert gas in the cylinder to be from 0.06 m/sec to 0.31 m/sec (0.005 to 0.056 SL/min·cm2) during a post-addition-pre-growth period. By controlling the flow velocity of the inert gas to be in the above-described range during the post-addition-pre-growth period, the inert gas flows smoothly even when the pressure within the cylinder is relatively high. Evaporation of a volatile dopant because of a reverse flow of the inert gas can be restrained. The volatile dopant can be prevented from adhering to the flow straightening cylinder in an amorphous state, and the volatile dopant can be prevented from dropping into a melt or sticking on the melt while growing a crystal. Foulings can be easily removed.
摘要翻译： 为了制造单晶，单晶提拉装置控制整流筒内的压力为33331Pa至79993Pa，气缸中的惰性气体流速为0.06m / sec至0.31m / sec（0.005 至0.056SL /分·cm 2）。 通过在加成后生长期间将惰性气体的流速控制在上述范围内，即使当气缸内的压力相对较高时，惰性气体也平滑地流动。 由于惰性气体的反向流动，可以抑制挥发性掺杂剂的蒸发。 可以防止挥发性掺杂剂以非晶状态粘附到流动矫正圆筒上，并且可以防止挥发性掺杂剂在生长晶体的同时落入熔体或粘附在熔体上。 结垢可以很容易地去除。
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公开(公告)号：US20110132257A1
公开(公告)日：2011-06-09
申请号：US13055990
申请日：2009-07-28
IPC分类号： C30B15/00
摘要： A silicon single crystal pull-up apparatus is used to pull up a doped silicon single crystal from a melt by means of the Czochralski process and includes a pull-up furnace, a sample chamber which is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding means for thermally isolating the interior of the pull-up furnace and the interior of the sample chamber, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, and a raising and lowering means which is provided with guide rails on which the sample tube can slide and a wire mechanism by which the sample tube is raised and lowered along the guide rails.
摘要翻译： 使用硅单晶上拉装置通过切克劳斯基法从熔体中提取掺杂的硅单晶，并且包括上拉炉，外部安装在上拉炉上的样品室和房屋 可升华的掺杂剂，用于热隔离上拉炉的内部和样品室的内部的屏蔽装置，可以在样品室的内部和上拉内部之间升高和降低的样品管 炉子，以及设置有样品管可以在其上滑动的导轨的升降装置，以及沿着导轨使样品管升高和降低的线机构。
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9.发明申请METHOD OF MANUFACTURING MONOCRYSTAL, FLOW STRAIGHTENING CYLINDER, AND MONOCRYSTAL PULLING-UP DEVICE 有权制造单晶，流动圆柱滚筒和单晶拉丝装置的方法公开(公告)号：US20100212580A1
公开(公告)日：2010-08-26
申请号：US12678400
申请日：2008-07-25
CPC分类号： C30B15/04 , C30B15/20 , C30B29/06 , Y10T117/1064 , Y10T117/1072
摘要： For manufacturing a monocrystal, a monocrystal pulling-up device controls pressure within a flow straightening cylinder to be from 33331 Pa to 79993 Pa and a flow velocity of inert gas in the cylinder to be from 0.06 m/sec to 0.31 m/sec (0.005 to 0.056 SL/min·cm2) during a post-addition-pre-growth period. By controlling the flow velocity of the inert gas to be in the above-described range during the post-addition-pre-growth period, the inert gas flows smoothly even when the pressure within the cylinder is relatively high. Evaporation of a volatile dopant because of a reverse flow of the inert gas can be restrained. The volatile dopant can be prevented from adhering to the flow straightening cylinder in an amorphous state, and the volatile dopant can be prevented from dropping into a melt or sticking on the melt while growing a crystal. Foulings can be easily removed.
摘要翻译： 为了制造单晶，单晶提拉装置控制整流筒内的压力为33331Pa至79993Pa，气缸中的惰性气体流速为0.06m / sec至0.31m / sec（0.005 至0.056SL /分·cm 2）。 通过在加成后生长期间将惰性气体的流速控制在上述范围内，即使当气缸内的压力相对较高时，惰性气体也平滑地流动。 由于惰性气体的反向流动，可以抑制挥发性掺杂剂的蒸发。 可以防止挥发性掺杂剂以非晶状态粘附到流动矫正圆筒上，并且可以防止挥发性掺杂剂在生长晶体的同时落入熔体或粘附在熔体上。 结垢可以很容易地去除。
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10.发明申请公开(公告)号：US20100133485A1
公开(公告)日：2010-06-03
申请号：US12524303
申请日：2008-05-23
CPC分类号： C30B29/06 , C30B15/04 , C30B15/203
摘要： In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm3); an average temperature gradient of the grown monocrystal is represented by Gave(K/mm); a pulling-up speed is represented by V (mm/min); and a coefficient corresponding to a kind of the dopant is represented by A. By growing the silicon monocrystal under a condition shown in the left to a critical line G1, occurrence of abnormal growth due to compositional supercooling can be prevented. Gave V > A · C - 43 ( 1 )
摘要翻译： 在通过Czochralski法从添加有N型掺杂剂的硅熔体生长硅单晶的过程中，使单晶生长使得满足如下的式（1）所示的关系。 在式（1）中：硅熔体中的掺杂剂浓度由C（原子/ cm3）表示; 生长的单晶的平均温度梯度由Gave（K / mm）表示; 拉伸速度由V（mm / min）表示; 并且与掺杂剂的种类相对应的系数由A表示。通过在左侧所示的条件下将硅单晶生长至临界线G1，可以防止由组成过冷而引起的异常生长的发生。 Gave V> A·C - 43（1）
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