Abstract:
Embodiments of cyclic diversity systems and methods are disclosed. One system embodiment, among others, comprises a logic configured to cyclically advance, or perform the periodic equivalent of the same, one or more sections of an orthogonal frequency division multiplexing (OFDM) packet relative to the OFDM packet to be transmitted on a first transmit antenna, the packet having the one or more cyclically advanced sections to be transmitted on a second transmit antenna, the duration of the cyclic advance having a duration less than a guard interval.
Abstract:
Various packet processing systems and methods are disclosed. One method embodiment, among others, comprises providing a legacy long training symbol (LTS), and inserting subcarriers in the legacy LTS to form an extended LTS (ELTS).
Abstract:
Embodiments of dual mode communication systems and methods are disclosed. On system embodiment, among others, comprises logic configured to perform spatial multiplexing and expanded bandwidth signaling to data.
Abstract:
Embodiments of legacy compatible spatial multiplexing systems and methods are disclosed. One method embodiment, among others, comprises receiving long training symbols and cyclic shifted long training symbols corresponding to legacy preamble portions of packets corresponding to first and second transmit signals, receiving long training symbols and inverted cyclic shifted long training symbols corresponding to spatial multiplexing portions of packets corresponding to first and second transmit signals, and combining the symbols corresponding to the first and second transmit antennas to estimate the respective channels.
Abstract:
A 10 MHz channelized orthogonal frequency division multiplexing (OFDM) transmitter is provided that communicates using a modified OFDM packet structure with a half-rate oscillator having standard accuracy. The transmitter has an inverse fast fourier transform (IFFT) data processor that appends an outer pair of data subcarriers on either end of an OFDM subcarrier profile. An IFFT long sync processor appends an outer pair of binary phase shift key (BPSK) subcarriers on either end of an OFDM long sync subcarrier profile. By copying or appending the information of the data subcarriers closest to zero Hz. to more robust locations, 10 MHz channelized OFDM can be achieved with half-rate clocks and 20 PPM oscillators.
Abstract:
An on-signal calibration system I and Q signals of a transmitter to remove distortions in the RF output signal. The transmitter generates I and Q values and converts, modulates and combines the I and Q values into the RF output signal for transmission. The calibration system includes a detector, a sampler, a selector, an imbalance estimator, and an IQ corrector. The detector senses the RF output signal and provides a detection signal indicative thereof. The sampler samples the detection signal and provides digital samples. The selector selects from among the digital samples that correspond to predetermined ranges of the I and Q values, or otherwise predetermined selection boxes at predetermined phases. The imbalance estimator determines at least one imbalance estimate based on selected digital samples. The IQ corrector corrects the I and Q values using at least one imbalance estimate.
Abstract:
An arrangement for improving adhesive attachment of micro-components in an assembly utilizes a plurality of parallel-disposed slots formed in the top surface of the substrate used to support the micro-components. The slots are used to control the flow and “shape” of an adhesive “dot” so as to quickly and accurately attach a micro-component to the surface of a substrate. The slots are formed (preferably, etched) in the surface of the substrate in a manner that lends itself to reproducible accuracy from one substrate to another. Other slots (“channels”) may be formed in conjunction with the bonding slots so that extraneous adhesive material will flow into these channels and not spread into unwanted areas.
Abstract:
A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.
Abstract:
An optical interconnection arrangement for use in high data applications is presented that eliminates the need for extensive serialization/de-serialization (SERDES) functionality by utilizing pulse amplitude modulation (PAM) techniques to represent the data in the optical domain while utilizing a separate channel for transmitting an optical clock signal, eliminating the need for clock recovery circuitry on the receive end of the arrangement.
Abstract:
A high speed silicon-based optical modulator with control of the dopant profiles in the body and gate regions of the device reduces the series resistance of the structure without incurring substantial optical power loss. That is, the use of increased dopant values in areas beyond the active region will allow for the series resistance to be reduced (and thus increase the modulating speed of the device) without incurring too large a penalty in signal loss. The dopant profiles within the gate and body regions are tailored to exhibit an intermediate value between the high dopant concentration in the contact areas and the low dopant concentration in the carrier integration window area.