Prioritized power budget arbitration for multiple concurrent memory access operations

    公开(公告)号:US12282669B2

    公开(公告)日:2025-04-22

    申请号:US18621747

    申请日:2024-03-29

    Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array. The control logic allocates power to one or more prioritized processing threads, of a plurality of processing threads that access the memory array, based on a value of a priority ring counter. The control logic starts a timer in response to detecting allocation of the power to a non-prioritized processing thread of the plurality of processing threads. While the timer is running, the control logic increments the priority ring counter before each power management cycle and prioritizes allocation of the power to the one or more prioritized processing threads located within a subset of the plurality of processing threads corresponding to a value of the priority ring counter.

    Internal clock signaling
    2.
    发明授权

    公开(公告)号:US12277349B2

    公开(公告)日:2025-04-15

    申请号:US18622132

    申请日:2024-03-29

    Abstract: A method includes selecting a particular ready/busy pin (R/B #) among a plurality of R/B # pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B # pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.

    INTERNAL CLOCK SIGNALING
    3.
    发明公开

    公开(公告)号:US20240241673A1

    公开(公告)日:2024-07-18

    申请号:US18622132

    申请日:2024-03-29

    CPC classification number: G06F3/0659 G06F1/04 G06F3/0604 G06F3/0679 G06F1/3275

    Abstract: A method includes selecting a particular ready/busy pin (R/B#) among a plurality of R/B# pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B# pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.

    DUAL DATA CHANNEL PEAK POWER MANAGEMENT
    6.
    发明公开

    公开(公告)号:US20240143501A1

    公开(公告)日:2024-05-02

    申请号:US18494841

    申请日:2023-10-26

    CPC classification number: G06F12/0246 G06F1/28

    Abstract: A memory device includes a plurality of memory dies. Each memory die of the plurality of memory dies includes a memory die and control logic, operatively coupled with the memory die, to perform operations including receiving, during a current auxiliary data communication cycle, a token to enable auxiliary data communication, in response to receiving the token, determining whether to communicate auxiliary data via an auxiliary data channel to at least one other memory die of a plurality of memory dies, and in response to determining to communicate the auxiliary data via the auxiliary data channel to the at least one other memory die, causing the auxiliary data to be communicated to the at least one other memory die.

    INTERNAL CLOCK SIGNALING
    7.
    发明申请

    公开(公告)号:US20230060310A1

    公开(公告)日:2023-03-02

    申请号:US17464868

    申请日:2021-09-02

    Abstract: A method includes selecting a particular ready/busy pin (R/B#) among a plurality of R/B# pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B# pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.

    CURRENT MANAGEMENT DURING DATA BURST OPERATIONS IN A MULTI-DIE MEMORY DEVICE

    公开(公告)号:US20240241643A1

    公开(公告)日:2024-07-18

    申请号:US18407239

    申请日:2024-01-08

    CPC classification number: G06F3/061 G06F3/0659 G06F3/0679

    Abstract: Control logic on a memory die of a multi-die memory sub-system receives, from a memory sub-system controller, a data burst command indicating an upcoming data burst event and determines an expected current utilization in the memory sub-system during the data burst event. The control logic further determines whether the expected current utilization in the memory sub-system during the data burst event satisfies a threshold criterion and responsive to determining that the expected current utilization in the memory sub-system during the data burst event does not satisfy the threshold criterion, pauses one or more operations being executed by the control logic on the memory die until the expected current utilization in the memory sub-system during the data burst event satisfies the threshold criterion. Responsive to determining that the expected current utilization in the memory sub-system during the data burst event satisfies the threshold criterion, the control logic provides, to the memory sub-system controller, an indication that the data burst event is approved and can perform one or more operations corresponding to the data burst event.

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