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公开(公告)号:US20240241673A1
公开(公告)日:2024-07-18
申请号:US18622132
申请日:2024-03-29
Applicant: Micron Technology, Inc.
Inventor: Liang Yu , Luigi Pilolli , Biagio Iorio
IPC: G06F3/06 , G06F1/04 , G06F1/3234
CPC classification number: G06F3/0659 , G06F1/04 , G06F3/0604 , G06F3/0679 , G06F1/3275
Abstract: A method includes selecting a particular ready/busy pin (R/B#) among a plurality of R/B# pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B# pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.
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公开(公告)号:US20240061592A1
公开(公告)日:2024-02-22
申请号:US18231338
申请日:2023-08-08
Applicant: Micron Technology, Inc.
Inventor: Chulbum Kim , Jonathan S. Parry , Luca Nubile , Ali Mohammadzadeh , Biagio Iorio , Liang Yu , Jeremy Binfet , Walter Di Francesco , Daniel J. Hubbard , Luigi Pilolli
IPC: G06F3/06 , G06F1/3234
CPC classification number: G06F3/0625 , G06F3/0659 , G06F3/0679 , G06F1/3275
Abstract: A method includes receiving a request to perform a memory access operation, wherein the memory access operation includes a set of sub-operations, selecting a current quantization data structure from a plurality of current quantization data structures, wherein each current quantization data structure of the plurality of current quantization data structures maintains, for each sub-operation of the set of sub-operations, a respective current quantization value reflecting an amount of current that is consumed by the respective sub-operation based on a set of peak power management (PPM) operation parameters, and causing the memory access operation to be performed using PPM based on the current quantization data structure.
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公开(公告)号:US11775185B2
公开(公告)日:2023-10-03
申请号:US16948426
申请日:2020-09-17
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Ali Mohammadzadeh , Biagio Iorio , Walter Di Francesco , Yuanhang Cao , Luca De Santis , Fumin Gu
CPC classification number: G06F3/0625 , G06F3/0655 , G06F3/0679 , G06F9/505 , G06F9/5094 , G06F2209/5018
Abstract: A memory device includes a plurality of memory dies, each memory die of the plurality of memory dies comprising a memory array and control logic. The control logic comprises a plurality of processing threads to execute memory access operations on the memory array concurrently, a thread selection component to identify one or more processing threads of the plurality of processing threads for a power management cycle of the associated memory die and a power management component to determine an amount of power associated with the one or more processing threads and request the amount of power during the power management cycle.
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公开(公告)号:US20240143501A1
公开(公告)日:2024-05-02
申请号:US18494841
申请日:2023-10-26
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Luigi Pilolli , Liang Yu , Ali Mohammadzadeh , Walter Di Francesco , Biagio Iorio
CPC classification number: G06F12/0246 , G06F1/28
Abstract: A memory device includes a plurality of memory dies. Each memory die of the plurality of memory dies includes a memory die and control logic, operatively coupled with the memory die, to perform operations including receiving, during a current auxiliary data communication cycle, a token to enable auxiliary data communication, in response to receiving the token, determining whether to communicate auxiliary data via an auxiliary data channel to at least one other memory die of a plurality of memory dies, and in response to determining to communicate the auxiliary data via the auxiliary data channel to the at least one other memory die, causing the auxiliary data to be communicated to the at least one other memory die.
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公开(公告)号:US20230060310A1
公开(公告)日:2023-03-02
申请号:US17464868
申请日:2021-09-02
Applicant: Micron Technology, Inc.
Inventor: Liang Yu , Luigi Pilolli , Biagio Iorio
Abstract: A method includes selecting a particular ready/busy pin (R/B#) among a plurality of R/B# pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B# pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.
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公开(公告)号:US20220083241A1
公开(公告)日:2022-03-17
申请号:US16948426
申请日:2020-09-17
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Ali Mohammadzadeh , Biagio Iorio , Walter Di Francesco , Yuanhang Cao , Luca De Santis , Fumin Gu
IPC: G06F3/06
Abstract: A memory device includes a plurality of memory dies, each memory die of the plurality of memory dies comprising a memory array and control logic. The control logic comprises a plurality of processing threads to execute memory access operations on the memory array concurrently, a thread selection component to identify one or more processing threads of the plurality of processing threads for a power management cycle of the associated memory die and a power management component to determine an amount of power associated with the one or more processing threads and request the amount of power during the power management cycle.
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公开(公告)号:US20240272812A1
公开(公告)日:2024-08-15
申请号:US18621747
申请日:2024-03-29
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Walter Di Francesco , Fumin Gu , Ali Mohammadzadeh , Biagio Iorio , Liang Yu
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0653 , G06F3/0659 , G06F3/0679
Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array. The control logic allocates power to one or more prioritized processing threads, of a plurality of processing threads that access the memory array, based on a value of a priority ring counter. The control logic starts a timer in response to detecting allocation of the power to a non-prioritized processing thread of the plurality of processing threads. While the timer is running, the control logic increments the priority ring counter before each power management cycle and prioritizes allocation of the power to the one or more prioritized processing threads located within a subset of the plurality of processing threads corresponding to a value of the priority ring counter.
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公开(公告)号:US20240241643A1
公开(公告)日:2024-07-18
申请号:US18407239
申请日:2024-01-08
Applicant: Micron Technology, Inc.
Inventor: Biagio Iorio , Luca Nubile , Walter Di Francesco , Jeremy Binfet , Liang Yu , Yankang He , Ali Mohammadzadeh
IPC: G06F3/06
CPC classification number: G06F3/061 , G06F3/0659 , G06F3/0679
Abstract: Control logic on a memory die of a multi-die memory sub-system receives, from a memory sub-system controller, a data burst command indicating an upcoming data burst event and determines an expected current utilization in the memory sub-system during the data burst event. The control logic further determines whether the expected current utilization in the memory sub-system during the data burst event satisfies a threshold criterion and responsive to determining that the expected current utilization in the memory sub-system during the data burst event does not satisfy the threshold criterion, pauses one or more operations being executed by the control logic on the memory die until the expected current utilization in the memory sub-system during the data burst event satisfies the threshold criterion. Responsive to determining that the expected current utilization in the memory sub-system during the data burst event satisfies the threshold criterion, the control logic provides, to the memory sub-system controller, an indication that the data burst event is approved and can perform one or more operations corresponding to the data burst event.
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公开(公告)号:US11977748B2
公开(公告)日:2024-05-07
申请号:US17668311
申请日:2022-02-09
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Walter Di Francesco , Fumin Gu , Ali Mohammadzadeh , Biagio Iorio , Liang Yu
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0653 , G06F3/0659 , G06F3/0679
Abstract: A memory device includes memory dice, each memory die including: a memory array; a memory to store a data structure; and control logic that includes: multiple processing threads to execute memory access operations on the memory array concurrently; a priority ring counter, the data structure to store an association between a value of the priority ring counter and a subset of the multiple processing threads; a threads manager to increment the value of the priority ring counter before a power management cycle and to identify one or more prioritized processing threads corresponding to the subset of the multiple processing threads; and a peak power manager coupled with the threads manager and to prioritize allocation of power to the one or more prioritized processing threads during the power management cycle.
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公开(公告)号:US11960764B2
公开(公告)日:2024-04-16
申请号:US17464868
申请日:2021-09-02
Applicant: Micron Technology, Inc.
Inventor: Liang Yu , Luigi Pilolli , Biagio Iorio
IPC: G06F1/04 , G06F1/3234 , G06F3/06
CPC classification number: G06F3/0659 , G06F1/04 , G06F3/0604 , G06F3/0679 , G06F1/3275
Abstract: A method includes selecting a particular ready/busy pin (R/B #) among a plurality of R/B # pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B # pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.
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