公开(公告)号：US20140021437A1

公开(公告)日：2014-01-23

申请号：US14035232

申请日：2013-09-24

Applicant: Micron Technology, Inc.

Inventor： Eugene P Marsh ,  Timothy A Quick

IPC: H01L45/00

CPC classification number: H01L45/1608 ,  H01L27/101 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/124 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1691

Abstract: Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.

Abstract translation: 本文描述了电阻变量存储单元结构和方法。 一个或多个电阻可变存储单元结构包括与第一和第二电阻可变存储单元共用的第一电极，第一垂直取向的电阻变化材料，其具有与第二电极接触的弓形顶表面和非弧形底表面 与第一电极接触; 以及第二垂直取向的电阻变化材料，其具有与第三电极接触的弓形顶表面和与第一电极接触的非弧形底表面。

公开(公告)号：US09287502B2

公开(公告)日：2016-03-15

申请号：US14035232

申请日：2013-09-24

Applicant: Micron Technology, Inc

Inventor： Eugene P Marsh ,  Timothy A. Quick

IPC: H01L21/20 ,  H01L45/00 ,  H01L27/10

CPC classification number: H01L45/1608 ,  H01L27/101 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/124 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1691

Abstract: Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.

公开(公告)号：US09029856B2

公开(公告)日：2015-05-12

申请号：US14252959

申请日：2014-04-15

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Stefan Uhlenbrock ,  Eugene P Marsh

IPC: H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376 ,  H01L21/02 ,  H01L31/032 ,  C23C16/30 ,  C23C16/455

CPC classification number: H01L21/02568 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02614 ,  H01L21/0262 ,  H01L31/0324

Abstract: Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract translation: 因此，形成金属硫族化物材料的方法可以包括将至少一种金属前体和至少一种硫属前体引入包含基底的室中，所述至少一种金属前体包含碱金属的胺或亚胺化合物，碱 土金属，过渡金属，后过渡金属或准金属，以及所述至少一种硫族元素前体包含硫，硒或碲的氢化物，烷基或芳基化合物。 所述至少一种金属前体和所述至少一种硫属前体可以反应以在所述基底上形成金属硫族化物材料。 还描述了形成金属碲化物材料的方法，形成半导体器件结构的方法和半导体器件结构。