公开(公告)号：US20130302995A1

公开(公告)日：2013-11-14

申请号：US13948043

申请日：2013-07-22

Applicant: Micron Technology, Inc.

Inventor： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

IPC: H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

Abstract translation: 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的冲洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。

公开(公告)号：US20140027913A1

公开(公告)日：2014-01-30

申请号：US14037633

申请日：2013-09-26

Applicant: Micron Technology, Inc.

Inventor： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

IPC: H01L23/48

CPC classification number: H01L23/48 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/2855 ,  H01L21/32134 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices have conductive material lining a first opening in an insulative material and in contact with a metal silicide layer at the base of the opening overlying an active area within a silicon material and lining a second opening in the insulative material in direct contact with a polysilicon plug having substantially no metal silicide situated thereon.

Abstract translation: 半导体器件具有导电材料，其衬有绝缘材料中的第一开口，并且与位于开口底部的金属硅化物层接触，覆盖硅材料内的有源区域，并且在绝缘材料中衬里与多晶硅直接接触的第二开口 插塞基本上没有位于其上的金属硅化物。

公开(公告)号：US08969217B2

公开(公告)日：2015-03-03

申请号：US13948043

申请日：2013-07-22

Applicant: Micron Technology, Inc.

Inventor： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

IPC: H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  B08B3/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

Abstract translation: 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的漂洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。