公开(公告)号：US20250087278A1

公开(公告)日：2025-03-13

申请号：US18958121

申请日：2024-11-25

Applicant: Micron Technology, Inc.

Inventor： Tingjun Xie ,  Zhenming Zhou ,  Zhenlei Shen ,  Charles See Yeung Kwong

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26

Abstract: It is determined whether a write disturb capability associated with a first location of a memory device satisfies a threshold criterion. Responsive to determining that the write disturb capability associated with the first location of the memory device satisfies the threshold criterion, a plurality of memory units is remapped to a second location of the memory device, wherein a write disturb capability associated with the second location of the memory device does not satisfy the threshold criterion.

公开(公告)号：US20230244566A1

公开(公告)日：2023-08-03

申请号：US18296595

申请日：2023-04-06

Applicant: Micron Technology, Inc.

Inventor： Zhenming Zhou ,  Tingjun Xie ,  Charles See Yeung Kwong

IPC: G06F11/10 ,  G06F3/06

CPC classification number: G06F11/106 ,  G06F11/1068 ,  G06F3/0679 ,  G06F3/0659 ,  G06F3/0619

Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, determining that a value of a write counter associated with the memory device satisfies a first threshold criterion, wherein the write counter is a global counter indicating a number of write operations to the memory device. The operations performed by the processing device further include determining that a set of failed bit count statistics corresponding to a plurality of codewords of a memory unit satisfies a second threshold criterion. The operations performed by the processing device further include, responsive to determining that the set of failed bit count statistics corresponding to the plurality of codewords of the memory unit satisfies the second threshold criterion, performing a write scrub operation on the memory unit.

公开(公告)号：US20230051408A1

公开(公告)日：2023-02-16

申请号：US17946612

申请日：2022-09-16

Applicant: Micron Technology, Inc.

Inventor： Charles See Yeung Kwong ,  Seungjune Jeon

IPC: G11C11/406 ,  G11C11/4096 ,  G11C29/42

Abstract: A memory access operation performed on a first memory unit of a memory device is detected. A counter associated with the first memory unit is modified. It is determined that the counter satisfies a threshold criterion, wherein the threshold criterion is based on a random or pseudo-random number within a margin of an average number of memory access operations. A refresh operation is performed on a second memory unit.

公开(公告)号：US20220019722A1

公开(公告)日：2022-01-20

申请号：US16930158

申请日：2020-07-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Zhenlei Shen ,  Tingjun Xie ,  Charles See Yeung Kwong

IPC: G06F30/398 ,  G06F11/30 ,  G06F30/392

Abstract: A quality rating for a memory device to be installed at a memory sub-system is determined, where the quality rating corresponds to a performance of the memory device at one or more operating temperatures. A determination is made whether the quality rating for the memory device satisfies a first quality rating condition associated with a first temperature zone of two or more temperature zones of the memory sub-system. Responsive to the determination that the quality rating for the memory device satisfies the first quality rating condition, the memory device is assigned to be installed at a first memory device socket of the first temperature zone.

公开(公告)号：US20210295900A1

公开(公告)日：2021-09-23

申请号：US17339047

申请日：2021-06-04

Applicant: Micron Technology, Inc.

Inventor： Tingjun Xie ,  Seungjune Jeon ,  Zhengang Chen ,  Zhenlei Shen ,  Charles See Yeung Kwong

IPC: G11C11/406 ,  G11C11/16

Abstract: A media management operation can be performed at a memory sub-system at a current frequency. An operating characteristic associated with the memory sub-system can be identified. The operating characteristic can reflect at least one of a write count, a bit error rate, or a read-retry trigger rate. A determination can be made as to whether the identified operating characteristic satisfies an operating characteristic criterion. In response to determining that the operating characteristic satisfies the characteristic criterion, the media management operation can be performed at a different frequency relative to the current frequency.

公开(公告)号：US12260916B2

公开(公告)日：2025-03-25

申请号：US18404827

申请日：2024-01-04

Applicant: Micron Technology, Inc.

Inventor： Zhongguang Xu ,  Nicola Ciocchini ,  Zhenlei Shen ,  Charles See Yeung Kwong ,  Murong Lang ,  Ugo Russo ,  Niccolo' Righetti

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/26 ,  G11C16/34

Abstract: A processing device in a memory sub-system initiates a partial block handling protocol for a closed block of a memory device, the block comprising a plurality of wordlines. The processing device further sends a first programming command to the memory device to program one or more wordlines of the block with first padding data having a first data pattern, wherein the one or more wordlines are adjacent to a last wordline of the block programmed before the block was closed. In addition, the processing device sends a second programming command to the memory device to program all of a set of remaining wordlines of the block with second padding data having a second data pattern comprising fewer bits of data per cell than the first data pattern.

公开(公告)号：US12183406B2

公开(公告)日：2024-12-31

申请号：US18238850

申请日：2023-08-28

Applicant: Micron Technology, Inc.

Inventor： Tingjun Xie ,  Zhenming Zhou ,  Zhenlei Shen ,  Charles See Yeung Kwong

IPC: G11C11/34 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  G11C16/34

Abstract: It is determined whether a write disturb capability associated with a first location of a memory device satisfies a threshold criterion. Responsive to determining that the write disturb capability associated with the first location of the memory device satisfies the threshold criterion, a plurality of memory units is remapped to a second location of the memory device, wherein a write disturb capability associated with the second location of the memory device does not satisfy the threshold criterion.

公开(公告)号：US20240045595A1

公开(公告)日：2024-02-08

申请号：US17880213

申请日：2022-08-03

Applicant: Micron Technology, Inc.

Inventor： Li-Te Chang ,  Murong Lang ,  Charles See Yeung Kwong ,  Vamsi Pavan Rayaprolu ,  Seungjune Jeon ,  Zhenming Zhou

IPC: G06F3/06 ,  G06N20/00

CPC classification number: G06F3/0616 ,  G06F3/0653 ,  G06F3/0679 ,  G06N20/00

Abstract: A processing device in a memory sub-system determines whether a media endurance metric associated with a memory block of a memory device satisfies one or more conditions. In response to the one or more conditions being satisfied, one or more read margin levels corresponding to a page type associated with the memory device are determined. A machine learning model is applied to the one or more read margin levels to generate a margin prediction value based on the page type and a wordline group associated with the memory device. Based on the margin prediction value, the memory device is assigned to a selected bin of a set of bins. A media scan operation is executed on the memory device in accordance with a scan frequency associated with the selected bin.

公开(公告)号：US11615830B2

公开(公告)日：2023-03-28

申请号：US17339047

申请日：2021-06-04

Applicant: Micron Technology, Inc.

Inventor： Tingjun Xie ,  Seungjune Jeon ,  Zhengang Chen ,  Zhenlei Shen ,  Charles See Yeung Kwong

IPC: G11C11/00 ,  G11C11/406 ,  G11C11/16

Abstract: A media management operation can be performed at a memory sub-system at a current frequency. An operating characteristic associated with the memory sub-system can be identified. The operating characteristic can reflect at least one of a write count, a bit error rate, or a read-retry trigger rate. A determination can be made as to whether the identified operating characteristic satisfies an operating characteristic criterion. In response to determining that the operating characteristic satisfies the characteristic criterion, the media management operation can be performed at a different frequency relative to the current frequency.

公开(公告)号：US20230074538A1

公开(公告)日：2023-03-09

申请号：US17467826

申请日：2021-09-07

Applicant: Micron Technology, Inc.

Inventor： Zhenming Zhou ,  Tingjun Xie ,  Charles See Yeung Kwong

IPC: G06F11/10 ,  G06F3/06

Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, determining that a value of a write counter associated with the memory device satisfies a first threshold criterion. The operations performed by the processing device further include, responsive to determining that the value of the write counter satisfies the first threshold criterion, identifying a first memory unit and a second memory unit of the memory device, the second memory unit comprising one or more memory cells adjacent to one or more memory cells of the first memory unit. The operations performed by the processing device further include performing a read operation on the second memory unit to determine a set of failed bit count statistics corresponding to a plurality of codewords of the second memory unit. The operations performed by the processing device further include determining that the set of failed bit count statistics corresponding to the plurality of codewords of the second memory unit satisfies a second threshold criterion. The operations performed by the processing device further include, responsive to determining that the set of failed bit count statistics corresponding to the plurality of codewords of the second memory unit satisfies the second threshold criterion, performing a write scrub operation on the second memory unit.