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    Substrate processing platform allowing processing in different ambients
    5.
    发明申请
    Substrate processing platform allowing processing in different ambients 审中-公开
    基板处理平台允许在不同的环境中进行处理

    公开(公告)号：US20060240680A1

    公开(公告)日：2006-10-26

    申请号：US11114250

    申请日：2005-04-25

    申请人： Yoshitaka Yokota ,  Kirk Moritz ,  Kai Ma ,  Wen Chang ,  Anastasios Parasiris ,  Rohit Sharma ,  Agus Tjandra ,  Vedapuram Achutharaman ,  Sundar Ramamurthy ,  Randhir Thakur

    发明人： Yoshitaka Yokota ,  Kirk Moritz ,  Kai Ma ,  Wen Chang ,  Anastasios Parasiris ,  Rohit Sharma ,  Agus Tjandra ,  Vedapuram Achutharaman ,  Sundar Ramamurthy ,  Randhir Thakur

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67207 ,  H01L21/67115 ,  H01L21/67778

    摘要： A semiconductor wafer processing system including a factory interface operating at atmospheric pressure and mounting plural wafer cassettes and plural wafer processing chambers connected to the factory interface through respective slit valves. A robot in the factory interface can transfer wafers between the cassettes and the processing chambers. At least one of the processing chambers can operate at reduced pressure The processing chamber may be a rapid thermal processing chamber including an array of lamps irradiating a processing volume through a window. The lamphead is vacuum pumped to a pressure approximating that in the processing volume. A multi-step process may be performed with different pressures. The invention also includes a wafer access port of a thermal processing chamber which can flow an inert gas in outside of the slit valve to thereby form a gas curtain outside of the opened slit to prevent the out flow of toxic processing gases.

    摘要翻译： 一种半导体晶片处理系统，包括在大气压下工作的工厂接口并安装多个晶片盒和通过相应的狭缝阀连接到工厂接口的多个晶片处理室。 工厂界面中的机器人可以在盒和处理室之间传送晶片。 处理室中的至少一个可以在减压下操作。处理室可以是快速热处理室，其包括通过窗口照射处理容积的灯阵列。 灯头被真空泵送到接近处理量的压力。 可以用不同的压力进行多步骤过程。 本发明还包括热处理室的晶片入口，其能够使狭缝阀外部的惰性气体流动，从而在打开的狭缝外形成气幕，以防止有毒处理气体流出。

    Water cooled gas injector
    6.
    发明授权
    Water cooled gas injector 失效
    水冷气体注射器

    公开(公告)号：US08409353B2

    公开(公告)日：2013-04-02

    申请号：US13277385

    申请日：2011-10-20

    申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    IPC分类号： C23C16/00

    CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

    摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

    摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

    Method of thermally treating silicon with oxygen
    7.
    发明申请
    Method of thermally treating silicon with oxygen 失效
    用氧热处理硅的方法

    公开(公告)号：US20110250764A1

    公开(公告)日：2011-10-13

    申请号：US13165502

    申请日：2011-06-21

    申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    IPC分类号： H01L21/316

    CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

    摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

    摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室被保持在低于20托的低压，并且衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

    Thermal oxidation of silicon using ozone
    8.
    发明授权
    Thermal oxidation of silicon using ozone 有权
    使用臭氧的硅氧化

    公开(公告)号：US07972441B2

    公开(公告)日：2011-07-05

    申请号：US11099082

    申请日：2005-04-05

    申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    IPC分类号： C23C16/40 ,  H01L21/31

    CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

    摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

    摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室被保持在低于20托的低压，并且衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

    Thermal oxidation of silicon using ozone
    9.
    发明申请
    Thermal oxidation of silicon using ozone 有权
    使用臭氧的硅氧化

    公开(公告)号：US20060223315A1

    公开(公告)日：2006-10-05

    申请号：US11099082

    申请日：2005-04-05

    申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    IPC分类号： H01L21/302 ,  C23C16/00

    CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

    摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

    摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体例如氢气以提高氧化速率，稀释气体如氮气或O 2 O 2通过另一入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。