Plasma doping method and apparatus thereof
    2.
    发明授权
    Plasma doping method and apparatus thereof 有权
    等离子体掺杂方法及其装置

    公开(公告)号:US08450819B2

    公开(公告)日:2013-05-28

    申请号:US13291186

    申请日:2011-11-08

    IPC分类号: H01L27/14 H01L21/44

    摘要: In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.

    摘要翻译: 在等离子体焰炬单元中,具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部,并且在其周边设置有黄铜块。 当气体被供应到圆柱形腔室中时,向导体杆供应高频电力,并且在圆柱形腔室中产生等离子体,使得等离子体照射基材。

    Plasma processing apparatus and plasma processing method
    3.
    发明授权
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号:US08703613B2

    公开(公告)日:2014-04-22

    申请号:US13582557

    申请日:2011-05-11

    IPC分类号: H01L21/44 H01L27/14

    摘要: A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.

    摘要翻译: 基材放置在基材放置台的基材放置面上。 电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室,该圆柱形腔体由绝缘材料构成,并设置有矩形裂缝状等离子体喷射口,并且盖住气缸的相对端部,气体喷射口将气体供应到 圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。 通过向螺线管线圈提供高频电力的高频电源,在圆筒形室中产生等离子体,等离子体从等离子体喷射口发射到基体材料。 在相对移动等离子体焰炬单元和基材放置台的同时,可以对基材表面进行热处理。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    5.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20120325777A1

    公开(公告)日:2012-12-27

    申请号:US13582557

    申请日:2011-05-11

    IPC分类号: H01L21/465 B44C1/22 C23C16/50

    摘要: A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.

    摘要翻译: 基材放置在基材放置台的基材放置面上。 电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室,该圆柱形腔体由绝缘材料构成,并设置有矩形裂缝状等离子体喷射口,并且盖住气缸的相对端部,气体喷射口将气体供应到 圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。 通过向螺线管线圈提供高频电力的高频电源,在圆筒形室中产生等离子体,等离子体从等离子体喷射口发射到基体材料。 在相对移动等离子体焰炬单元和基材放置台的同时,可以对基材表面进行热处理。

    PLASMA DOPING METHOD AND APPARATUS THEREOF
    6.
    发明申请
    PLASMA DOPING METHOD AND APPARATUS THEREOF 有权
    等离子喷涂方法及其设备

    公开(公告)号:US20120115317A1

    公开(公告)日:2012-05-10

    申请号:US13291186

    申请日:2011-11-08

    摘要: In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.

    摘要翻译: 在等离子体焰炬单元中,具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部,并且在其周边设置有黄铜块。 当气体被供应到圆柱形腔室中时,向导体杆供应高频电力,并且在圆柱形腔室中产生等离子体,使得等离子体照射基材。

    Plasma processing method and apparatus
    7.
    发明授权
    Plasma processing method and apparatus 失效
    等离子体处理方法和装置

    公开(公告)号:US07465407B2

    公开(公告)日:2008-12-16

    申请号:US10649670

    申请日:2003-08-28

    IPC分类号: C23C16/00

    摘要: In a plasma processing method for supplying an electric power to a first electrode, making a first electrode have a ground potential, or making a first electrode have a floating potential while supplying gas to a plasma source arranged in a vicinity of an object to be processed at a pressure in a vicinity of an atmospheric pressure. The method includes processing a part of the object to be processed with a plasma in a state where an area of a surface of a potentially controlled second electrode, arranged in a position opposite to the plasma source via the object to be processed, is made superposed on the object to be processed smaller than an area of a surface of the plasma source superposed on the object to be processed.

    摘要翻译: 在用于向第一电极供给电力的等离子体处理方法中,使第一电极具有接地电位,或者使第一电极具有浮置电位,同时向布置在待处理物体附近的等离子体源供给气体 在大气压力附近的压力下。 该方法包括在等离子体处理待处理物体的一部分的状态,其中经由待处理物体布置在与等离子体源相反的位置的潜在受控的第二电极的表面的面积被叠加 对待处理的物体小于叠加在待处理物体上的等离子体源的表面的面积。

    Plasma processing method and apparatus

    公开(公告)号:US20070075039A1

    公开(公告)日:2007-04-05

    申请号:US11601730

    申请日:2006-11-20

    摘要: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

    Plasma display panel and process for producing the same
    9.
    发明申请
    Plasma display panel and process for producing the same 失效
    等离子显示面板及其制造方法

    公开(公告)号:US20070013312A1

    公开(公告)日:2007-01-18

    申请号:US11484590

    申请日:2006-07-12

    IPC分类号: H01J17/49 H01J11/02

    CPC分类号: H01J9/02 H01J11/12 H01J11/38

    摘要: There are provided a PDP having a higher luminous efficiency and a process for producing the same. In a plasma display panel filled with a discharge gas between a front plate and a rear plate opposed to each other, the front plate 100 comprises a glass substrate 1, electrodes 2 (transparent electrodes 2a and bus electrodes 2b) on the glass substrate 1, the first dielectric layer 4 covering the electrodes 2 and the glass substrate 1 and containing a fluorine atom, the second dielectric layer 5 covering the first dielectric layer 4 and containing a fluorine atom at a less amount than that in the first dielectric layer 4, and a protective layer 6 covering the second dielectric layer 5.

    摘要翻译: 提供了具有较高发光效率的PDP及其制造方法。 在前面板和背板之间填充有放电气体的等离子体显示面板中,前板100包括玻璃基板1,玻璃基板上的电极2(透明电极2a和总线电极2b) 如图1所示,覆盖电极2和玻璃基板1并含有氟原子的第一电介质层4,覆盖第一电介质层4并且含有比第一电介质层4中的氟原子少的氟原子的第二电介质层5 以及覆盖第二电介质层5的保护层6。

    Plasma processing method and apparatus
    10.
    发明授权
    Plasma processing method and apparatus 失效
    等离子体处理方法和装置

    公开(公告)号:US07157659B2

    公开(公告)日:2007-01-02

    申请号:US10647479

    申请日:2003-08-26

    IPC分类号: B23K10/00

    摘要: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

    摘要翻译: 在板状绝缘体与板状电极相邻配置的状态下,从位于更靠近板状电极的排气口向处理对象附近供给含有惰性气体的放电气体 至少两排排气口,其设置在板状电极周围,并且被形成为被板状绝缘体包围,并且彼此距离与板状电极的距离不同, 而排出控制气体从另一个排气口供给到处理对象附近。 在供给气体的同时,向板状电极或加工对象供给电力,由此进行处理对象物的等离子体处理。 因此,提供能够以高精度处理期望的细线性部分的等离子体处理方法和装置。