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公开(公告)号：US20250039611A1
公开(公告)日：2025-01-30
申请号：US18913111
申请日：2024-10-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryosuke NIWA , Shinsuke IKEUCHI , Hiroshi MATSUBARA
Abstract: A device may include a first substrate provided with a first through hole. A device may include a second substrate arranged adjacent to the first through hole and configured to partially overlap with the first substrate on a second side of the first substrate. A device may include a vibration layer arranged adjacent to and overlap with the first substrate on a first side of the first substrate opposite the second substrate and configured to stride across the first through hole. A device may include a resin layer disposed to overlap with a portion of the vibration layer overlapping with the first substrate. A device may include a first pad electrode. A device may include a second pad electrode. A device may include the first pad electrode and the second pad electrode being disposed on a surface of the resin layer opposite from the vibration layer.
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公开(公告)号：US20230112175A1
公开(公告)日：2023-04-13
申请号：US17818990
申请日：2022-08-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Keisuke NISHIO , Yukiteru SUGAYA , Masaki TADA , Masanori KATO , Syunsuke KIDO , Hiroshi MATSUBARA
Abstract: In a radio-frequency module, a hybrid filter includes an acoustic wave filter including at least one acoustic wave resonator, an inductor having a winding portion, and a capacitor. A plurality of outer electrodes of the acoustic wave filter includes a first input and output electrode connected to a first signal terminal, a second input and output electrode connected to a second signal terminal, and a ground electrode connected to a ground terminal. The inductor is disposed on a first major surface of a mounting substrate and is adjacent to the acoustic wave filter in plan view in a thickness direction of the mounting substrate. When viewed in a direction of a winding axis of the winding portion of the inductor, an inner part of the winding portion in the inductor does not overlap any of the first input and output electrode, the second input and output electrode, and ground electrode.
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公开(公告)号：US20220336155A1
公开(公告)日：2022-10-20
申请号：US17859128
申请日：2022-07-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takeshi KAGAWA , Masatomi HARADA , Hiroshi MATSUBARA
Abstract: A semiconductor device includes a semiconductor substrate having first and second main surfaces that oppose each other in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer includes a first electrode layer on a side of the semiconductor substrate, a second electrode layer that faces the first electrode layer, a dielectric layer disposed between the electrode layers, and a first outer electrode electrically connected to the first electrode layer through an opening in the dielectric layer. An end portion of the dielectric layer on a side of the first region is in contact with the first electrode layer, and in the dielectric layer, a size of the end portion in the thickness direction is smaller than a size of an inter-electrode portion between the first and second electrode layers in the thickness direction.
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公开(公告)号：US20210315096A1
公开(公告)日：2021-10-07
申请号：US17221310
申请日：2021-04-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hiroshi MATSUBARA , Masanori KATO , Yukiteru SUGAYA , Syunsuke KIDO
Abstract: A filter includes a first input/output electrode and the second input/output electrode, and is arranged on a first main surface of a mounting substrate. The mounting substrate includes a first land electrode, a second land electrode, a ground terminal, and a plurality of via conductors. The first land electrode is connected to the first input/output electrode. The second land electrode is connected to the second input/output electrode. The ground terminal is located closer to a second main surface side than the first main surface in a thickness direction of the mounting substrate. The plurality of via conductors is arranged between the first main surface and the second main surface, and is connected to the ground terminal. The plurality of via conductors is located between the first land electrode and the second land electrode in a plan view from the thickness direction of the mounting substrate.
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公开(公告)号：US20200336132A1
公开(公告)日：2020-10-22
申请号：US16920834
申请日：2020-07-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hiroshi MATSUBARA
Abstract: A multiplexer includes a first matching circuit having one end connected to a common terminal; a first filter that has one end connected to the other end of the first matching circuit and the other end connected to a first terminal; a second matching circuit having one end connected to the common terminal; a second filter that has one end connected to the other end of the second matching circuit and the other end connected to a second terminal; and a third filter that has one end connected to the common terminal and the other end connected to a third terminal. The first matching circuit includes a first inductor connected on a first signal path in the first matching circuit. The second matching circuit includes a second inductor connected between a second signal path in the second matching circuit and ground.
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Patent Agency Ranking
公开(公告)号：US20200014370A1
公开(公告)日：2020-01-09
申请号：US16574249
申请日：2019-09-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hiroshi MATSUBARA , Masanori KATO , Syunsuke KIDO
Abstract: A hybrid multiplexer includes a filter configured to allow a high-frequency signal of an HB to pass therethrough, and a filter configured to allow a high-frequency signal of an MB to pass therethrough, in which the filter includes a matching circuit, a first resonance circuit defined by one of an LPF and an HPF, and a second resonance circuit defined by the other of the LPF and the HPF, the LPF includes an inductor and a parallel arm resonator, the HPF includes a serial arm resonator and an inductor, and a resonant frequency of the parallel arm resonator and an anti-resonant frequency of the serial arm resonator are both located between a frequency at a low-band end of the HB and a frequency at a high-band end of the HB.
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公开(公告)号：US20240284121A1
公开(公告)日：2024-08-22
申请号：US18651723
申请日：2024-05-01
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shinsuke IKEUCHI , Hiroshi MATSUBARA , Ryosuke NIWA
CPC classification number: H04R17/10 , B06B1/0648 , B06B1/0666 , B81B7/0061 , G01S15/10 , H04R1/025 , B81B2201/0257 , B81B2201/0271 , B81B2203/0127 , B81B2203/019 , B81B2207/07 , H04R2201/003
Abstract: An acoustic device includes an acoustic MEMS device. An acoustic path communicates with the acoustic MEMS device. Ultrasound generated by vibration of the acoustic MEMS device can resonate in the acoustic path. An ultrasonic transducer has sound pressure frequency characteristics such that sound pressure peaks occur as a result of a combination of resonance of the acoustic MEMS device and resonance in the acoustic path. A relationship of about 5≤(f0−fl)/f0×100≤about 33 is satisfied, where f0 represents a resonance frequency of the acoustic MEMS device and fl represents a frequency lower than the resonance frequency and closest to the resonance frequency among frequencies at which the sound pressure peaks occur in the sound pressure frequency characteristics.
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公开(公告)号：US20230060305A1
公开(公告)日：2023-03-02
申请号：US17822152
申请日：2022-08-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hiroshi MATSUBARA , Hidemori AKAGI
Abstract: A first filter is a hybrid filter including an acoustic wave filter, a plurality of first inductors, and a plurality of first capacitors. A high frequency module further includes a metal electrode layer covering at least part of a resin layer and at least part of an outer peripheral surface of a mounting substrate. Among a plurality of inductors including the plurality of first inductors of the first filter and a plurality of second inductors of a second filter, at least one inductor (the second inductor) is a circuit element including a conductor pattern portion formed in the mounting substrate. The shortest distance between the outer peripheral surface of the mounting substrate and a signal terminal (a third signal terminal) connected to the circuit element is longer than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit element.
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公开(公告)号：US20220336345A1
公开(公告)日：2022-10-20
申请号：US17859245
申请日：2022-07-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masatomi HARADA , Takeshi KAGAWA , Hiroshi MATSUBARA , Nobuyoshi ADACHI
IPC: H01L23/522 , H01G4/08 , H01L23/28 , H01L23/528
Abstract: A semiconductor device having a semiconductor substrate with first and second main surfaces that face one another in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer has a first electrode layer on the semiconductor substrate, a dielectric layer on the first electrode layer, a second electrode layer on the dielectric layer, and first and second outer electrodes electrically connected to the first and second electrode layers, respectively. The semiconductor substrate has a first end-portion region in which the circuit layer is not provided on the semiconductor substrate and on the side of the first end surface. In the first end-portion region, a first exposed portion is provided that is exposed between the first main surface and the first end surface.
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10.发明申请公开(公告)号：US20190028085A1
公开(公告)日：2019-01-24
申请号：US16032098
申请日：2018-07-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masanori KATO , Syunsuke KIDO , Minoru IWANAGA , Hiroshi MATSUBARA
Abstract: A high-frequency filter coupled between an input-output terminal and another input-output terminal includes series arm resonators, parallel arm resonators, and an inductor defining an LC resonant circuit. Frequencies at a first attenuation pole defined by resonant frequencies or anti-resonant frequencies of the series arm resonators and the parallel arm resonators and a frequency at a second attenuation pole defined by a resonant frequency of the LC resonant circuit are included in one stop band of the high-frequency filter, and the frequencies at the first attenuation pole are located closer than the frequency at the second attenuation pole to a pass band of the high-frequency filter.
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