公开(公告)号：US20220336155A1

公开(公告)日：2022-10-20

申请号：US17859128

申请日：2022-07-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takeshi KAGAWA ,  Masatomi HARADA ,  Hiroshi MATSUBARA

IPC: H01G4/33 ,  H01G4/252 ,  H01G4/12 ,  H01G4/10 ,  H01G4/30 ,  H01L49/02

Abstract: A semiconductor device includes a semiconductor substrate having first and second main surfaces that oppose each other in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer includes a first electrode layer on a side of the semiconductor substrate, a second electrode layer that faces the first electrode layer, a dielectric layer disposed between the electrode layers, and a first outer electrode electrically connected to the first electrode layer through an opening in the dielectric layer. An end portion of the dielectric layer on a side of the first region is in contact with the first electrode layer, and in the dielectric layer, a size of the end portion in the thickness direction is smaller than a size of an inter-electrode portion between the first and second electrode layers in the thickness direction.

公开(公告)号：US20240072107A1

公开(公告)日：2024-02-29

申请号：US18502482

申请日：2023-11-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masatomi HARADA ,  Korekiyo ITO ,  Takeshi KAGAWA

IPC: H01L23/00 ,  H03H7/01 ,  H03H7/38

CPC classification number: H01L28/60 ,  H01L23/564 ,  H03H7/0115 ,  H03H7/38

Abstract: A semiconductor device that includes a substrate; a first electrode layer on the substrate; a dielectric film on the first electrode layer; a second electrode layer on the dielectric film; a protective layer covering the first electrode layer and the second electrode layer; and an outer electrode penetrating the protective layer. The dielectric film includes silicon nitride, and an atomic concentration ratio of Si to a total amount of Si and N contained in the dielectric film is 43 atom % to 70 atom %.

公开(公告)号：US20220336345A1

公开(公告)日：2022-10-20

申请号：US17859245

申请日：2022-07-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masatomi HARADA ,  Takeshi KAGAWA ,  Hiroshi MATSUBARA ,  Nobuyoshi ADACHI

IPC: H01L23/522 ,  H01G4/08 ,  H01L23/28 ,  H01L23/528

Abstract: A semiconductor device having a semiconductor substrate with first and second main surfaces that face one another in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer has a first electrode layer on the semiconductor substrate, a dielectric layer on the first electrode layer, a second electrode layer on the dielectric layer, and first and second outer electrodes electrically connected to the first and second electrode layers, respectively. The semiconductor substrate has a first end-portion region in which the circuit layer is not provided on the semiconductor substrate and on the side of the first end surface. In the first end-portion region, a first exposed portion is provided that is exposed between the first main surface and the first end surface.

公开(公告)号：US20240071691A1

公开(公告)日：2024-02-29

申请号：US18502440

申请日：2023-11-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takeshi KAGAWA ,  Masaki TSUKIDA

IPC: H01G4/33 ,  H01G4/224 ,  H01G4/30

CPC classification number: H01G4/33 ,  H01G4/224 ,  H01G4/306

Abstract: A capacitor that includes: a substrate having a first principal surface and a second principal surface opposed to each other in a thickness direction, wherein the first principal surfaces includes a step in a plan view from the thickness direction; an insulating film on the first principal surface of the substrate; a first electrode layer on the insulating film and positioned within a boundary defined by the step in the plan view; a dielectric film on the first electrode layer; a second electrode layer on the dielectric film; a moisture-resistant film on the dielectric film and the second electrode layer; a protective layer on the moisture-resistant film; and an outer electrode penetrating through the protective layer.

公开(公告)号：US20240063252A1

公开(公告)日：2024-02-22

申请号：US18497049

申请日：2023-10-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yuta IMAMURA ,  Masatomi HARADA ,  Takeshi KAGAWA ,  Korekiyo ITO

IPC: H01L23/31 ,  H01L23/12

CPC classification number: H01L28/60 ,  H01L23/12 ,  H01L23/31

Abstract: A semiconductor device that includes: a substrate having a first main surface and a second main surface opposite to each other in a thickness direction; a circuit layer on the first main surface of the substrate; and a first resin body between an end portion of the substrate and the first outer electrode, and between the end portion of the substrate and the second outer electrode in a plan view in the thickness direction. In the thickness direction, a leading end of the first resin body is positioned higher than top ends of the first and second outer electrodes. In a sectional view, a first side surface of the first resin body approaches a second side surface of the first resin body on a side close to the end portion of the substrate, and the second side surface rises steeply against a first main surface of the substrate.

公开(公告)号：US20240062958A1

公开(公告)日：2024-02-22

申请号：US18497066

申请日：2023-10-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masatomi HARADA ,  Korekiyo ITO ,  Takeshi KAGAWA ,  Yuta IMAMURA

IPC: H01G4/005 ,  H01G4/33 ,  H01G4/224

CPC classification number: H01G4/005 ,  H01G4/33 ,  H01G4/224

Abstract: A capacitor that includes: a substrate; a first electrode layer on the substrate, the first electrode layer including a first principal surface facing the substrate, and a second principal surface opposite the first principal surface; a dielectric film on the first electrode layer and covering an end portion of the first electrode layer; a second electrode layer on the dielectric film, the second electrode layer including a third principal surface facing the dielectric film, a fourth principal surface opposite the third principal surface, and a side surface joining the third principal surface and the fourth principal surface, wherein at least part of the side surface of the second electrode layer has a tapered shape which is inclined inward from the third principal surface to the fourth principal surface.

公开(公告)号：US20220376036A1

公开(公告)日：2022-11-24

申请号：US17880113

申请日：2022-08-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hiroshi MATSUBARA ,  Masatomi HARADA ,  Takeshi KAGAWA

IPC: H01L49/02 ,  H01G4/008 ,  H01G4/30 ,  H01G4/10 ,  H01G4/232

Abstract: A semiconductor device is provided that includes a substrate 10 with first and second opposing main surfaces, a circuit layer disposed on the first main surface, and a first resin body on a surface of the circuit layer opposite from the substrate. The circuit layer includes first and second electrode layers on a side of the semiconductor substrate, a dielectric layer disposed between the electrode layers, a first outer electrode electrically connected to the first electrode layer and extended to the surface of the circuit layer, and a second outer electrode electrically connected to the second electrode layer and extended to the surface of the circuit layer. The first resin body is between the first and second outer electrodes in a plan view, and in sectional view, a tip end of the first resin body is positioned higher than tip ends of the first and second outer electrodes.