公开(公告)号：US20240284121A1

公开(公告)日：2024-08-22

申请号：US18651723

申请日：2024-05-01

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shinsuke IKEUCHI ,  Hiroshi MATSUBARA ,  Ryosuke NIWA

IPC: H04R17/10 ,  B06B1/06 ,  B81B7/00 ,  G01S15/10 ,  H04R1/02

CPC classification number: H04R17/10 ,  B06B1/0648 ,  B06B1/0666 ,  B81B7/0061 ,  G01S15/10 ,  H04R1/025 ,  B81B2201/0257 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2203/019 ,  B81B2207/07 ,  H04R2201/003

Abstract: An acoustic device includes an acoustic MEMS device. An acoustic path communicates with the acoustic MEMS device. Ultrasound generated by vibration of the acoustic MEMS device can resonate in the acoustic path. An ultrasonic transducer has sound pressure frequency characteristics such that sound pressure peaks occur as a result of a combination of resonance of the acoustic MEMS device and resonance in the acoustic path. A relationship of about 5≤(f0−fl)/f0×100≤about 33 is satisfied, where f0 represents a resonance frequency of the acoustic MEMS device and fl represents a frequency lower than the resonance frequency and closest to the resonance frequency among frequencies at which the sound pressure peaks occur in the sound pressure frequency characteristics.

公开(公告)号：US20210372876A1

公开(公告)日：2021-12-02

申请号：US17399228

申请日：2021-08-11

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryosuke NIWA ,  Koichi YOSHIDA

IPC: G01L9/00

Abstract: A pressure sensor includes a base substrate, a first insulating layer at the base substrate, a stationary electrode at the first insulating layer, a side-wall portion around the stationary electrode at the first insulating layer, and a membrane having electrical conductivity, facing the stationary electrode across a space, and supported by the side-wall portion. The side-wall portion includes a shield electrode on the first insulating layer and a second insulating layer on the shield electrode. A distance between the stationary electrode and the membrane is less than a distance between the shield electrode and the membrane.

公开(公告)号：US20250039611A1

公开(公告)日：2025-01-30

申请号：US18913111

申请日：2024-10-11

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryosuke NIWA ,  Shinsuke IKEUCHI ,  Hiroshi MATSUBARA

IPC: H04R17/02 ,  B81B7/00 ,  B81C1/00

Abstract: A device may include a first substrate provided with a first through hole. A device may include a second substrate arranged adjacent to the first through hole and configured to partially overlap with the first substrate on a second side of the first substrate. A device may include a vibration layer arranged adjacent to and overlap with the first substrate on a first side of the first substrate opposite the second substrate and configured to stride across the first through hole. A device may include a resin layer disposed to overlap with a portion of the vibration layer overlapping with the first substrate. A device may include a first pad electrode. A device may include a second pad electrode. A device may include the first pad electrode and the second pad electrode being disposed on a surface of the resin layer opposite from the vibration layer.

公开(公告)号：US20250026631A1

公开(公告)日：2025-01-23

申请号：US18910213

申请日：2024-10-09

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hiroshi MATSUBARA ,  Shinsuke IKEUCHI ,  Ryosuke NIWA ,  Gou SAITOU

IPC: B81B7/00 ,  B81C1/00 ,  H10N30/045

Abstract: A MEMS device is provided that includes a piezoelectric element including a piezoelectric membrane including a ferroelectric and configured to vibrate based on an application of a voltage. A device may include a diode portion electrically connected in parallel to the piezoelectric element and including a diode.

公开(公告)号：US20240334835A1

公开(公告)日：2024-10-03

申请号：US18739371

申请日：2024-06-11

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Makoto SAWAMURA ,  Ryosuke NIWA ,  Shinsuke IKEUCHI

IPC: H10N30/87 ,  H10N30/06 ,  H10N30/081 ,  H10N30/20

CPC classification number: H10N30/875 ,  H10N30/06 ,  H10N30/081 ,  H10N30/2047

Abstract: A piezoelectric device includes a base with a cavity and a vibration layer on an upper side of the base and including a fixed portion fixed to the base and a membrane portion extending from the fixed portion over the cavity, the vibration layer includes a lower electrode layer connected to the base, a piezoelectric layer on an upper side of the lower electrode layer, and an upper electrode layer on an upper side of the piezoelectric layer. The piezoelectric layer is between the upper and lower electrode layers in at least a portion of the membrane portion. A first pad electrode is on an upper side of the upper electrode layer, a second pad electrode is on the upper side of the lower electrode layer, and a first conductor layer is on the upper side and spaced away from at least one of the first and second pad electrodes.

公开(公告)号：US20240270567A1

公开(公告)日：2024-08-15

申请号：US18632485

申请日：2024-04-11

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hiroshi MATSUBARA ,  Shinsuke IKEUCHI ,  Ryosuke NIWA ,  Takahiro ASADA

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00309 ,  B81B7/0061 ,  B81B2201/0257 ,  B81B2203/0353 ,  B81B2203/04 ,  B81B2207/096 ,  B81C2203/035

Abstract: An acoustic device includes a substrate including a first surface and a second surface facing a side opposite to the first surface, an opening, an acoustic MEMS element fixed to the first surface to cover the opening, an annular electrode surrounding the opening on the second surface, and a solder resist layer covering the second surface adjacently to the annular electrode on an outer side and an inner side of the annular electrode The solder resist layer includes a first cutaway portion to connect a first portion and a second portion to each other, the first portion being any portion in an edge of the annular electrode the second portion being any portion in an edge of the substrate.

公开(公告)号：US20240246811A1

公开(公告)日：2024-07-25

申请号：US18625251

申请日：2024-04-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryosuke NIWA

IPC: B81B7/00 ,  G01L9/00

CPC classification number: B81B7/0029 ,  G01L9/0073 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/04

Abstract: A pressure sensor structure includes a sensor body including a diaphragm plate defining and functioning as a sense electrode, a base electrode facing the diaphragm plate, and a sidewall layer maintaining a gap between the diaphragm plate and the base electrode, and a conductive base substrate supporting the sensor body. The sidewall layer includes a guard electrode layer and upper and lower guard electrode insulating layers electrically insulating the guard electrode layer. Surfaces of an outer side portion of each of the diaphragm plate and the sidewall layer are covered with an electrical insulating film that includes a contact region at which a portion of the guard electrode layer communicates with outside air.