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公开(公告)号：US20230299037A1
公开(公告)日：2023-09-21
申请号：US18022978
申请日：2021-08-24
发明人： Tomohiro UNO , Tetsuya OAMADA , Daizo ODA , Yuto KURIHARA , Ryo OISHI
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L24/43 , H01L2224/45124 , H01L2224/43848 , H01L2924/3511 , H01L2924/35121 , H01L2924/01014 , H01L2924/01021 , H01L2924/0103 , H01L2924/01058 , H01L2924/01026 , H01L2924/01028 , H01L2924/01039 , H01L2924/0104
摘要： There is provided a novel Al wiring material that suppresses an increase in cold strength and exhibits a favorable high-temperature reliability. The Al wiring material contains one or more selected from the group consisting of Er, Yb and Gd so as to satisfy 0.001≤x1≤0.6 where x1 is a total content thereof [% by mass], with the balance comprising Al.
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公开(公告)号：US20230154884A1
公开(公告)日：2023-05-18
申请号：US17916935
申请日：2021-03-29
发明人： Daizo ODA , Takumi OOKABE , Motoki ETO , Noritoshi ARAKI , Ryo OISHI , Teruo HAIBARA , Tomohiro UNO , Tetsuya OYAMADA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45139
摘要： There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy
0.05
≤
x
1
≤
3.0
,
and
15
≤
x
2
≤
700
where x1 is a total concentration of the first element [at.%] and x2 is a total concentration of the second element [at. ppm],
with the balance including Ag.-
公开(公告)号：US20230142531A1
公开(公告)日：2023-05-11
申请号：US17912824
申请日：2020-03-25
发明人： Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45124 , H01L2224/45149 , H01L2224/4516 , H01L2224/45171
摘要： There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire is characterized in that the wire contains 0.02 to 1% by mass of Fe, further contains 0.05 to 0.5% by mass in total of at least one or more of Mn and Cr, and the balance includes Al and inevitable impurities, wherein a total content of Fe, Mn and Cr in solid solution is 0.01 to 1% by mass. The Al bonding wire contains Mn and Cr in addition to Fe, so that Fe, Mn and Cr can be promoted to form a solid solution in quenching treatment after the solution treatment. Accordingly, the Al bonding wire can achieve an effect of solid-solution strengthening of the wire due to the increase in the total content of Fe, Mn and Cr in solid solution and an effect of preventing recrystallization from proceeding during use of the semiconductor device at a high temperature for a long time.
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公开(公告)号：US20230018430A1
公开(公告)日：2023-01-19
申请号：US17942838
申请日：2022-09-12
发明人： Daizo ODA , Takashi YAMADA , Motoki ETO , Teruo HAIBARA , Tomohiro UNO
摘要： In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.
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公开(公告)号：US20200013748A1
公开(公告)日：2020-01-09
申请号：US16576683
申请日：2019-09-19
发明人： Takashi YAMADA , Daizo ODA , Ryo OISHI , Tomohiro UNO
摘要： There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.
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公开(公告)号：US20240312946A1
公开(公告)日：2024-09-19
申请号：US18275595
申请日：2022-01-31
发明人： Tetsuya OYAMADA , Yuya SUTO , Tomohiro UNO , Daizo ODA , Ryo OISHI , Yuto KURIHARA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45124 , H01L2924/01012 , H01L2924/01014 , H01L2924/01021 , H01L2924/01026 , H01L2924/01028 , H01L2924/0104 , H01L2924/01046 , H01L2924/01078
摘要： To provide an Al bonding wire for semiconductor devices that stably exhibits a favorable bonding strength at a second bonded part. An Al bonding wire for semiconductor devices containing equal to or larger than 0.01 mass % and smaller than 0.8 mass % of one or more of Sc, Zr, and Mg in total, wherein, as a result of measuring a crystal orientation on a cross-section parallel to a wire axis direction including a wire axis of the bonding wire, 10 an orientation ratio of a crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.
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公开(公告)号：US20220266396A1
公开(公告)日：2022-08-25
申请号：US17628842
申请日：2020-11-12
发明人： Tetsuya OYAMADA , Tomohiro UNO , Daizo ODA , Motoki ETO , Takumi OHKABE
摘要： An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention contains one or more of In and Ga for a total of 110 at ppm or more and less than 500 at ppm, and one or more of Pd and Pt for a total of 150 at ppm or more and less than 12,000 at ppm, and a balance being made up of Ag and unavoidable impurities.
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公开(公告)号：US20220152749A1
公开(公告)日：2022-05-19
申请号：US17437802
申请日：2020-03-12
发明人： Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
摘要： There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.
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公开(公告)号：US20200312808A1
公开(公告)日：2020-10-01
申请号：US16311125
申请日：2017-06-13
发明人： Daizo ODA , Takashi YAMADA , Motoki ETO , Teruo HAIBARA , Tomohiro UNO
摘要： In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.
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公开(公告)号：US20200279824A1
公开(公告)日：2020-09-03
申请号：US16637653
申请日：2018-08-07
发明人： Tetsuya OYAMADA , Tomohiro UNO , Takashi YAMADA , Daizo ODA
IPC分类号： H01L23/00
摘要： The present invention provides a bonding wire for a semiconductor device, where the bonding wire can inhibit wear of capillary. In a Cu alloy bonding wire for a semiconductor device, a total of abundance ratios of a crystal orientations and having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis is to crystal orientations on a wire surface 40% or more and 90% or less, in average area percentage.
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