Abstract:
Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.
Abstract:
Methods and devices for detecting incident radiation, such as incident X-rays or gamma-rays, are provided. The methods and devices use single-crystalline mercury chalcoiodide compounds having the formula Hg3Q2I2, where Q represents a chalcogen atom or a combination of chalcogen atoms, as photoelectric materials. Also provided are methods for growing single-crystals of the mercury chalcoiodide compounds using external organic chemical transport agents.
Abstract:
Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.
Abstract:
Methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds having the formula A2P2X6, where A represents Pb or Sn and X represents S or Se, as photoelectric materials.
Abstract:
Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB2X5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.
Abstract:
Photovoltaic cells incorporating the compounds A/M/X compounds as hole transport materials are provide. The A/M/X compounds comprise one or more A moieties, one or more M atoms and one or more X atoms. The A moieties are selected from organic cations and elements from Group 1 of the periodic table, the M atoms are selected from elements from at least one of Groups 3, 4, 5, 13, 14 or 15 of the periodic table, and the X atoms are selected from elements from Group 17 of the periodic table.
Abstract:
Polysulfide intercalated layered double hydroxides and methods for their use in vapor and liquid-phase metal capture applications are provided. The layered double hydroxides comprise a plurality of positively charged host layers of mixed metal hydroxides separated by interlayer spaces. Polysulfide anions are intercalated in the interlayer spaces.
Abstract:
Porous polymeric networks and composite materials comprising metal nanoparticles distributed in the polymeric networks are provided. Also provided are methods for using the polymeric networks and the composite materials in liquid- and vapor-phase waste remediation applications. The porous polymeric networks, are highly porous, three-dimensional structures characterized by high surface areas. The polymeric networks comprise polymers polymerized from aldehydes and phenolic molecules.
Abstract:
Materials comprising an A/M/X compound are provided. An A/M/X compound is a compound comprising one or more A moieties, one or more M atoms and one or more X atoms, where the A moieties are selected from organic cations and elements from Group 1 of the periodic table, the M atoms are selected from elements from Group 14 of the periodic table, and the X atoms are selected from elements from Group 17 of the periodic table. The materials include two-phase materials in which the A/M/X compound provides a first phase and a dopant compound provides a second phase.
Abstract translation:提供了包含A / M / X化合物的材料。 A / M / X化合物是包含一个或多个A部分,一个或多个M原子和一个或多个X原子的化合物,其中A部分选自有机阳离子和元素周期表第1族的元素,M 原子选自周期表第14族的元素,X原子选自周期表第17族的元素。 这些材料包括两相材料,其中A / M / X化合物提供第一相,掺杂剂化合物提供第二相。
Abstract:
Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (