公开(公告)号：US20190018080A1

公开(公告)日：2019-01-17

申请号：US15647709

申请日：2017-07-12

Applicant: NXP B.V.

Inventor： Stephan Marauska ,  Jörg Kock ,  Mark Isler ,  Harmut Matz ,  Dennis Helmboldt

IPC: G01R33/09 ,  H01L43/06 ,  H05K9/00

Abstract: A system comprises at least one magnetic field sensor having a magnetic sense element formed on a substrate. The sense element senses a magnetic field along a sense axis oriented in a first direction parallel to a surface of the substrate. A shield structure is formed on the substrate. The shield structure has first and second shield portions and the magnetic sense element is disposed between the shield portions. Each of the shield portions includes a body and first and second brim segments extending from opposing ends of the body. The body is aligned parallel to a second direction perpendicular to the first direction and parallel to the surface of the substrate. The brim segments are aligned substantially parallel to the first direction. The shield portions are arranged in mirror symmetry with the brim segments of each of the shield portions extending toward one another.

公开(公告)号：US20170328964A1

公开(公告)日：2017-11-16

申请号：US15582177

申请日：2017-04-28

Applicant: NXP B.V.

Inventor： Mark Isler

IPC: G01R33/09 ,  G01R33/00 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: G01R33/093 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/098 ,  H01L27/22 ,  H01L43/00 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/065 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14

Abstract: According to embodiments there is provided a magneto-resistive sensor module. The sensor module may comprise: an integrated circuit; magneto-resistive sensor elements arranged as a bridge circuit monolithically integrated on the integrated circuit; and a stress buffer layer arranged between the integrated circuit and the magneto-resistive sensor element. There is also a provided a method of manufacturing the magneto-resistive sensor module.

公开(公告)号：US09203016B2

公开(公告)日：2015-12-01

申请号：US14272893

申请日：2014-05-08

Applicant: NXP B.V.

Inventor： Mark Isler ,  Frederik Willem Maurits Vanhelmont

IPC: H01L43/12 ,  G01R33/00 ,  G01R33/09 ,  H01L43/02

CPC classification number: H01L43/12 ,  G01R33/0052 ,  G01R33/09 ,  H01L43/02

Abstract: A method is described for manufacturing a magnetic sensor module (100, 200, 300, 400) having magnetic sensor elements (130, 330, 430) monolithically integrated at a semiconductor chip (110) which comprises an integrated circuit. The described method comprises (a) providing a composite semiconductor arrangement (105) comprising (i) the semiconductor chip (110), (ii) contact elements (112) for the integrated circuit, which are formed on the semiconductor chip (110), and (iii) a dielectric layer (120) formed over the semiconductor chip (110) and over the contact elements (112), (b) forming a magnetic sensor layer providing the material for the magnetic sensor elements (130, 330, 430) monolithically over the dielectric layer (120), (c) exposing the contact elements (112) by removing a part of the dielectric layer (120) which part is located above the contact elements (112), and (d) forming an electric conductive protection layer (140, 240, 340, 440) over either the formed magnetic sensor layer or the exposed contact elements (112) in order to prevent negative interactions between (i) the step of forming the magnetic sensor elements (130, 330, 430) resulting from the magnetic sensor layer and (ii) the step of exposing the contacting elements (112). It is further described a magnetic sensor module (100, 200, 300, 400) which is manufactured by the above described method.

Abstract translation: 描述了一种用于制造具有单片集成在包括集成电路的半导体芯片（110）上的磁传感器元件（130,330,430）的磁传感器模块（100,200,300,400）的方法。 所描述的方法包括（a）提供复合半导体装置（105），其包括：（i）形成在半导体芯片（110）上的半导体芯片（110），（ii）用于集成电路的接触元件（112） 和（iii）形成在所述半导体芯片（110）上并且在所述接触元件（112）之上的电介质层（120），（b）形成提供所述磁性传感器元件（130,330,430）的材料的磁传感器层， （c）通过去除位于接触元件（112）上方的部分的介电层（120）的一部分来暴露接触元件（112），和（d）形成导电 保护层（140,240,340,440）在所形成的磁传感器层或暴露的接触元件（112）之上，以便防止（i）形成磁传感器元件（130,330,430）的步骤 ）和（ii）曝光步骤 接触元件（112）。 进一步描述通过上述方法制造的磁传感器模块（100,200,300,400）。

公开(公告)号：US20190027682A1

公开(公告)日：2019-01-24

申请号：US15652311

申请日：2017-07-18

Applicant: NXP B.V.

Inventor： Mark Isler ,  Klaus Reimann ,  Hartmut Matz ,  Jörg Kock

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10

Abstract: A method includes performing an ion beam etching process on a tunnel magnetoresistance (TMR) stack to remove material portions of a first magnetic layer and a tunnel barrier layer of the TMR stack. The ion beam etching process stops at a top surface of a second magnetic layer of the TMR stack. A protective layer is deposited over the TMR stack. Another etch process is performed to remove the protective layer such that a portion of the second magnetic layer is exposed from the protective layer and a spacer is formed from a remaining portion of the protective layer. The spacer surrounds sidewalls of the first magnetic layer and the tunnel barrier layer. The portion of the second magnetic layer exposed from the protective layer is removed so that a TMR sensor element remains, where the TMR sensor element includes a bottom magnet, a top magnet, and a tunnel junction.

公开(公告)号：US20200300940A1

公开(公告)日：2020-09-24

申请号：US16359141

申请日：2019-03-20

Applicant: NXP B.V.

Inventor： Mark Isler

IPC: G01R33/09 ,  H01L43/12 ,  H01F41/34 ,  H01L27/22 ,  H01F10/32

Abstract: A method includes depositing a hardmask layer over a magnetoresistive (MR) structural layer formed on a substrate, the hardmask layer being formed from tungsten or a tungsten-based composition. A photoresist layer is deposited over the hardmask layer and is patterned to expose a first portion of the hardmask layer. A first etch process is performed to remove the first portion of the hardmask layer and expose a second portion of the MR structural layer and a dry etch process is performed to remove the second portion of the MR structural layer and produce an MR sensor structure. Following the dry etch process, a composite structure remains that includes the MR sensor structure and a hardmask section of the hardmask layer, the hardmask section overlying the MR sensor structure. A spacer formed from a protective, dielectric material layer may additionally be formed surrounding the composite structure.

公开(公告)号：US10261138B2

公开(公告)日：2019-04-16

申请号：US15647709

申请日：2017-07-12

Applicant: NXP B.V.

Inventor： Stephan Marauska ,  Jörg Kock ,  Mark Isler ,  Harmut Matz ,  Dennis Helmboldt

IPC: G01R33/09 ,  H01L43/06 ,  H05K9/00 ,  G01R33/00 ,  G01R33/025

Abstract: A system comprises at least one magnetic field sensor having a magnetic sense element formed on a substrate. The sense element senses a magnetic field along a sense axis oriented in a first direction parallel to a surface of the substrate. A shield structure is formed on the substrate. The shield structure has first and second shield portions and the magnetic sense element is disposed between the shield portions. Each of the shield portions includes a body and first and second brim segments extending from opposing ends of the body. The body is aligned parallel to a second direction perpendicular to the first direction and parallel to the surface of the substrate. The brim segments are aligned substantially parallel to the first direction. The shield portions are arranged in mirror symmetry with the brim segments of each of the shield portions extending toward one another.

公开(公告)号：US20190101600A1

公开(公告)日：2019-04-04

申请号：US15719932

申请日：2017-09-29

Applicant: NXP B.V.

Inventor： Mark Isler

IPC: G01R33/00 ,  G01R33/09

CPC classification number: G01R33/0017 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/096 ,  G01R33/098

Abstract: A method includes forming first coil segments in an electrically conductive layer of an active silicon substrate, forming a magnetic sense element over an electrically insulating layer of the active silicon substrate, the magnetic sense element being separated from the first coil segments in the electrically conductive layer by the electrically insulating layer. A protective layer is formed over the magnetic sense element. Conductive vias are formed extending through the protective layer and the electrically insulating layer to electrically couple with the first coil segments, and second coil segments are formed over the protective layer, the second coil segments electrically coupling with the conductive vias to produce a coil structure of the first coil segments, the conductive vias, and the second coil segments, with the coil structure surrounding the magnetic sense element.

公开(公告)号：US20190079141A1

公开(公告)日：2019-03-14

申请号：US15703102

申请日：2017-09-13

Applicant: NXP B.V.

Inventor： Stephan Marauska ,  Jörg Kock ,  Hartmut Matz ,  Mark Isler ,  Dennis Helmboldt

IPC: G01R33/00 ,  G01D5/20

Abstract: A magnetic field sensor includes a magnetic sense element and a shield structure formed on a substrate. The shield structure fully encircles the magnetic sense element for suppressing stray magnetic fields along a first axis and a second axis, both of which are parallel to a surface of the substrate and perpendicular to one another. A magnetic field is oriented along a third axis perpendicular to the surface of the substrate, and the magnetic sense element is configured to sense a magnetic field along the first axis. A magnetic field deflection element, formed on the substrate proximate the magnetic sense element, redirects the magnetic field from the third axis into the first axis to be sensed as a measurement magnetic field by the magnetic sense element. At least two magnetic field sensors, each fully encircled by a shield structure, form a gradient unit for determining a magnetic field gradient.

公开(公告)号：US09964606B2

公开(公告)日：2018-05-08

申请号：US15582177

申请日：2017-04-28

Applicant: NXP B.V.

Inventor： Mark Isler

IPC: H01L27/22 ,  G01R33/09 ,  H01L43/14 ,  H01L43/04 ,  H01L43/06 ,  H01L43/00 ,  G01R33/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: G01R33/093 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/098 ,  H01L27/22 ,  H01L43/00 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/065 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14

Abstract: According to embodiments there is provided a magneto-resistive sensor module. The sensor module may comprise: an integrated circuit; magneto-resistive sensor elements arranged as a bridge circuit monolithically integrated on the integrated circuit; and a stress buffer layer arranged between the integrated circuit and the magneto-resistive sensor element. There is also a provided a method of manufacturing the magneto-resistive sensor module.

公开(公告)号：US20140367815A1

公开(公告)日：2014-12-18

申请号：US14272893

申请日：2014-05-08

Applicant: NXP B.V.

Inventor： Mark Isler ,  Frederik Willem Maurits Vanhelmont

IPC: H01L43/12 ,  H01L43/02

CPC classification number: H01L43/12 ,  G01R33/0052 ,  G01R33/09 ,  H01L43/02

Abstract: A method is described for manufacturing a magnetic sensor module (100, 200, 300, 400) having magnetic sensor elements (130, 330, 430) monolithically integrated at a semiconductor chip (110) which comprises an integrated circuit. The described method comprises (a) providing a composite semiconductor arrangement (105) comprising (i) the semiconductor chip (110), (ii) contact elements (112) for the integrated circuit, which are formed on the semiconductor chip (110), and (iii) a dielectric layer (120) formed over the semiconductor chip (110) and over the contact elements (112), (b) forming a magnetic sensor layer providing the material for the magnetic sensor elements (130, 330, 430) monolithically over the dielectric layer (120), (c) exposing the contact elements (112) by removing a part of the dielectric layer (120) which part is located above the contact elements (112), and (d) forming an electric conductive protection layer (140, 240, 340, 440) over either the formed magnetic sensor layer or the exposed contact elements (112) in order to prevent negative interactions between (i) the step of forming the magnetic sensor elements (130, 330, 430) resulting from the magnetic sensor layer and (ii) the step of exposing the contacting elements (112). It is further described a magnetic sensor module (100, 200, 300, 400) which is manufactured by the above described method.

Abstract translation: 描述了一种用于制造具有单片集成在包括集成电路的半导体芯片（110）上的磁传感器元件（130,330,430）的磁传感器模块（100,200,300,400）的方法。 所描述的方法包括（a）提供复合半导体装置（105），其包括：（i）形成在半导体芯片（110）上的半导体芯片（110），（ii）用于集成电路的接触元件（112） 和（iii）形成在所述半导体芯片（110）上并且在所述接触元件（112）之上的电介质层（120），（b）形成提供所述磁性传感器元件（130,330,430）的材料的磁传感器层， （c）通过去除位于接触元件（112）上方的部分的介电层（120）的一部分来暴露接触元件（112），和（d）形成导电 保护层（140,240,340,440）在所形成的磁传感器层或暴露的接触元件（112）之上，以便防止（i）形成磁传感器元件（130,330,430）的步骤 ）和（ii）曝光步骤 接触元件（112）。 进一步描述通过上述方法制造的磁传感器模块（100,200,300,400）。