公开(公告)号：US20090211708A1

公开(公告)日：2009-08-27

申请号：US12366907

申请日：2009-02-06

申请人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

发明人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

IPC分类号： H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24 disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25 positioned uprightly above the inclined surfaces 16a and 16b.

摘要翻译： 提供了通过限定电介质和槽之间的位置关系而具有高度改进的等离子体点火性能和点火稳定性的等离子体处理装置。 等离子体处理装置11包括具有顶部开口的处理室12; 电介质15，其底面上具有倾斜面16a，16b，使得厚度尺寸依次变化，并设置成封闭处理室12的顶部开口; 以及设置在电介质15的顶表面上的天线24，用于向电介质15提供微波，从而在电介质15的底表面处产生等离子体。此外，天线24设置有多个槽25， 倾斜面16a，16b。

公开(公告)号：US08753475B2

公开(公告)日：2014-06-17

申请号：US12366907

申请日：2009-02-06

申请人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

发明人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25positioned uprightly above the inclined surfaces 16a and 16b.

摘要翻译： 提供了通过限定电介质和槽之间的位置关系而具有高度改进的等离子体点火性能和点火稳定性的等离子体处理装置。 等离子体处理装置11包括具有顶部开口的处理室12; 电介质15，其底面上具有倾斜面16a，16b，使得厚度尺寸依次变化，并设置成封闭处理室12的顶部开口; 以及天线24，其布置在电介质15的顶表面上，用于向电介质15提供微波，从而在电介质15的底表面处产生等离子体。此外，天线24设置有多个槽25， 表面16a和16b。

公开(公告)号：USD583755S1

公开(公告)日：2008-12-30

申请号：US29266330

申请日：2006-09-19

申请人： Shingo Takahashi

设计人： Shingo Takahashi

公开(公告)号：US5581679A

公开(公告)日：1996-12-03

申请号：US775660

申请日：1991-10-10

申请人： Shingo Takahashi ,  Aisaku Imanishi

发明人： Shingo Takahashi ,  Aisaku Imanishi

IPC分类号： G09G5/24 ,  G06T3/00 ,  G06T11/20 ,  G09G5/36 ,  G06T11/00

CPC分类号： G06T11/203

摘要： A method for approximately representing a first curve having anchor points and a control point, wherein the first curve is subdivided into a plurality of segments and an approximate curve is constructed by joining the points corresponding to the ends of the segments with straight lines. The number of segments is a prestored value.

摘要翻译： 一种用于近似表示具有锚定点和控制点的第一曲线的方法，其中所述第一曲线被细分成多个段，并且通过将与段的末端对应的点连接成直线来构造近似曲线。 段的数量是预先存储的值。

公开(公告)号：US09693244B2

公开(公告)日：2017-06-27

申请号：US14119752

申请日：2012-05-24

申请人： Kenichi Maruhashi ,  Shingo Takahashi ,  Noriyuki Itabashi ,  Nobuhide Yoshida

发明人： Kenichi Maruhashi ,  Shingo Takahashi ,  Noriyuki Itabashi ,  Nobuhide Yoshida

IPC分类号： H04W24/08 ,  H04W88/06 ,  H04W72/08 ,  H04W24/00 ,  H04W4/14 ,  H04L12/403 ,  H04W84/18 ,  H04W28/04 ,  H04L29/08 ,  H04L12/40

CPC分类号： H04W24/08 ,  H04L12/403 ,  H04L12/4035 ,  H04L67/125 ,  H04L2012/4026 ,  H04W4/14 ,  H04W24/00 ,  H04W28/04 ,  H04W72/082 ,  H04W84/18 ,  H04W88/06

摘要： A sensor system in which it is possible to identify a sufficient number of sensors even in a situation where the data length of a packet is limited, as well as a sensor and a receiving device in the same, are provided. A sensor repeating a measurement period for performing measurement and a transmission period for performing transmission at predetermined cycles, includes: a measurement section (11) that outputs during the measurement period measurement information based on predetermined measurement; and a transmission section (12) that transmits during the transmission period, by using a single packet or a plurality of packets, source identification information for identifying a source of a packet, the measurement information, and sensor-related information for identifying the sensor and/or a measurement target equipment of this sensor.

公开(公告)号：USD647474S1

公开(公告)日：2011-10-25

申请号：US29397328

申请日：2011-07-14

申请人： Shingo Takahashi

设计人： Shingo Takahashi

公开(公告)号：US08042584B2

公开(公告)日：2011-10-25

申请号：US11892387

申请日：2007-08-22

申请人： Shingo Takahashi

发明人： Shingo Takahashi

IPC分类号： B60C11/03

CPC分类号： B60C11/1369 ,  B60C11/0309 ,  B60C11/042 ,  B60C2011/0383 ,  B60C2011/1338 ,  B60C2200/10 ,  Y10S152/03

摘要： A pneumatic tire is provided in the tread portion (2) with a circumferential groove (3, 3b, 3c) extending continuously in the tire circumferential direction and having a pair of oppositely opposed groove walls (6). The circumferential groove (3, 3b, 3c) is provided in at least one of the groove walls (6) with radial grooves (9) arranged along the longitudinal direction of the circumferential groove (3). The radially outer end (9o) of the radial groove (9) is positioned in a range (a1) of from 0 to 20% of the depth (GDt) of the circumferential groove. The radially inner end (9i) of the radial groove (9) is positioned in a range (a2) of from 80 to 100% of the depth (GDt) of the circumferential groove. The radial groove has an opening width (g) of not less than 1.0 mm, but not more than 6.0 mm.

摘要翻译： 在胎面部（2）上设置有沿轮胎周向连续延伸并具有一对相对的槽壁（6）的周向槽（3,3b，3c）的充气轮胎。 所述周向沟槽（3,3b，3c）设置在至少一个所述槽壁（6）中，沿着所述周向槽（3）的长度方向配置有径向槽（9）。 径向槽（9）的径向外端（9o）位于圆周槽深度（GDt）的0〜20％的范围（a1）内。 径向槽（9）的径向内端（9i）位于圆周槽深度（GDt）的80％到100％的范围（a2）内。 径向槽的开口宽度（g）不小于1.0mm，但不大于6.0mm。

公开(公告)号：US07943517B2

公开(公告)日：2011-05-17

申请号：US11877243

申请日：2007-10-23

申请人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。

公开(公告)号：US20100187493A1

公开(公告)日：2010-07-29

申请号：US12654979

申请日：2010-01-12

申请人： Shingo Takahashi

发明人： Shingo Takahashi

IPC分类号： H01L45/00 ,  H01L29/22 ,  H01L21/34

CPC分类号： G11C11/5614 ,  G11C13/0011 ,  G11C2213/11 ,  G11C2213/34 ,  G11C2213/51 ,  G11C2213/56 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/16

摘要： Disclosed is a semiconductor storage device including a first electrode formed by being embedded in an insulating film formed on a substrate, a second electrode formed to be opposed to the first electrode, a storage layer formed between the first electrode and the second electrode, the storage layer being on a side of the first electrode, an ion source layer formed between the storage layer and the second electrode, and a diffusion prevention layer formed of a manganese oxide layer between the insulating film and the first electrode.

摘要翻译： 公开了一种半导体存储装置，包括：嵌入在形成在基板上的绝缘膜中形成的第一电极，与第一电极相对形成的第二电极，形成在第一电极和第二电极之间的存储层， 在所述第一电极的一侧，形成在所述保持层和所述第二电极之间的离子源层，以及由所述绝缘膜和所述第一电极之间的氧化锰层形成的扩散防止层。

公开(公告)号：US20060128148A1

公开(公告)日：2006-06-15

申请号：US11287137

申请日：2005-11-22

申请人： Shingo Takahashi

发明人： Shingo Takahashi

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76877 ,  H01L21/76847 ,  H01L21/76864

摘要： A method of manufacturing a semiconductor device by forming an alloy layer in a connection hole provided in a layer insulation film on a substrate, including a first step of forming a first Cu layer in the state of covering the inside wall of the connection hole, a second step of forming an Ag layer on the first Cu layer, a third step of filling up with a second Cu layer the connection hole provided with the Ag layer, and a fourth step of forming a via composed of a CuAg alloy by diffusion caused by a heat treatment.

摘要翻译： 一种通过在设置在基板上的层间绝缘膜的连接孔中形成合金层来制造半导体器件的方法，包括在覆盖连接孔的内壁的状态下形成第一Cu层的第一步骤， 在第一Cu层上形成Ag层的第二步骤，向第二Cu层填充设置有Ag层的连接孔的第三步骤，以及由CuAg合金通过由 热处理。