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    Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys
    2.
    发明授权
    Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys 有权
    磁传感元件包括自由磁层或具有两个由不同CoMn基合金合金构成的子层的固定磁层

    公开(公告)号：US07724481B2

    公开(公告)日：2010-05-25

    申请号：US11504147

    申请日：2006-08-15

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Kazumasa Nishimura ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Kazumasa Nishimura ,  Naoya Hasegawa

    IPC分类号： G11B5/39 ,  H01L43/08 ,  G01R33/09

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  Y10T428/1121 ,  Y10T428/115

    摘要： A magnetic sensing element is provided. A free magnetic layer has a three-layer structure including CoMnα sublayers each composed of a metal compound represented by the formula: Co2xMnxαy. The α contains an element β and Sb, the element β being at least one element selected from Ge, Ga, In, Si, Pb, Zn, Sn, and Al. The concentration x and the concentration y are each represented in terms of atomic percent and satisfy the equation: 3x+y=100 atomic percent. One of the CoMnα sublayers is in contact with a lower nonmagnetic material layer. The other CoMnα sublayer is in contact with upper nonmagnetic material layer. As a result, it is possible to achieve a high ΔRA and a lower interlayer coupling magnetic field Hin compared with the known art.

    摘要翻译： 提供了一种磁传感元件。 自由磁性层具有包含CoMnα亚层的三层结构，各层由以下通式表示的金属化合物构成：Co2xMnxαy。 α包含元素＆bgr; 和Sb，元素＆bgr; 是选自Ge，Ga，In，Si，Pb，Zn，Sn和Al中的至少一种元素。 浓度x和浓度y均以原子百分比表示，满足下式：3x + y = 100原子％。 CoMnα子层中的一个与较低的非磁性材料层接触。 另一个CoMnα子层与上部非磁性材料层接触。 结果，与已知技术相比，可以实现高的＆Dgr。RA和较低的层间耦合磁场Hin。

    Magnetic sensor using NiFe alloy for pinned layer
    3.
    发明授权
    Magnetic sensor using NiFe alloy for pinned layer 有权
    磁性传感器采用NiFe合金钉扎层

    公开(公告)号：US07609489B2

    公开(公告)日：2009-10-27

    申请号：US11366002

    申请日：2006-02-28

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3929

    摘要： A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allowed to flow in a direction perpendicular to the surfaces of the layers forming the multilayer film, wherein the pinned magnetic layer has a NiaFeb alloy layer (where a and b each indicate atomic percent, and 0

    摘要翻译： 一种磁传感器，包括：多层膜，其具有钉扎磁性层，其磁化被一个方向固定，并且在其上设置有非磁性材料层的固定磁性层上形成的自由磁性层，其中允许电流流动 在垂直于形成多层膜的层的表面的方向上，其中钉扎磁性层具有NiaFeb合金层（其中a和b各自表示原子百分比，并且满足0

    Tunnel type magnetic sensor having protective layer formed from Pt or Ru on free magnetic layer, and method for manufacturing the same
    6.
    发明申请
    Tunnel type magnetic sensor having protective layer formed from Pt or Ru on free magnetic layer, and method for manufacturing the same 审中-公开
    具有由自由磁性层上的Pt或Ru形成的保护层的隧道式磁传感器及其制造方法

    公开(公告)号：US20080055786A1

    公开(公告)日：2008-03-06

    申请号：US11888738

    申请日：2007-08-02

    申请人： Ryo Nakabayshi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa

    发明人： Ryo Nakabayshi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/40 ,  H01L43/08 ,  H01L43/12

    摘要： A tunnel type magnetic sensor includes a fixed magnetic layer that has magnetization fixed in one direction, an insulating barrier layer, and a free magnetic layer that has magnetization varied by an external magnetic field, which are laminated in that order from the bottom. The insulating barrier layer is formed from titanium oxide, and on the free magnetic layer, a first protective layer of platinum or ruthenium is formed. Accordingly, compared to the structure in which the first protective layer is not formed or the first protective layer is formed from Al, Ti, Cu, or IrMn, while a high rate of change in resistance is maintained, the magnetostriction of the free magnetic layer can be effectively decreased. When the insulating barrier layer is formed from aluminum oxide, the rate of change in resistance is decreased, or the magnetostriction of the free magnetic layer cannot be effectively decreased.

    摘要翻译： 隧道式磁传感器包括沿着一个方向具有固定磁化的固定磁性层，绝缘阻挡层和具有由外部磁场变化的磁化的自由磁性层，其从底部依次层叠。 绝缘阻挡层由氧化钛形成，在自由磁性层上形成铂或钌的第一保护层。 因此，与不形成第一保护层的结构或由Al，Ti，Cu或IrMn形成第一保护层的情况相比，在保持高电阻变化率的同时，自由磁性层的磁致伸缩 可以有效降低。 当绝缘阻挡层由氧化铝形成时，电阻变化率降低，或自由磁性层的磁致伸缩不能有效降低。

    Magnetic detection head and method for manufacturing the same
    8.
    发明申请
    Magnetic detection head and method for manufacturing the same 有权
    磁性检测头及其制造方法

    公开(公告)号：US20060268465A1

    公开(公告)日：2006-11-30

    申请号：US11436270

    申请日：2006-05-17

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3906 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3263 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/10

    摘要： A magnetic detection element capable of maintaining the ΔRA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.

    摘要翻译： 提供了能够将DeltaRA保持在高电平并且通过改善自由磁性层的材料来减小磁致伸缩的磁性检测元件及其制造方法。 自由磁性层包括由由组成式表示的金属化合物形成的CoMnX合金层构成的层压体， （其中X表示Ge，Ga，In，Si，Pb，Zn和Sb中的至少一种，a + b + c = 100原子％）和由组成式Co < （其中Z表示Sn和Al中的至少一种，d + e + f = 100原子％）。 以这种方式，可以减小自由磁性层的磁致伸缩。

    CPP magnetic detectig device containing NiFe alloy on free layer thereof
    9.
    发明申请
    CPP magnetic detectig device containing NiFe alloy on free layer thereof 失效
    在其自由层上含有NiFe合金的CPP磁检测装置

    公开(公告)号：US20060198062A1

    公开(公告)日：2006-09-07

    申请号：US11365697

    申请日：2006-02-28

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/127 ,  G11B5/33 ,  H01F10/1936 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/10

    摘要： A magnetic detecting device having a large ΔRA value is provided. A free magnetic layer has a three layer structure in which a CoFe layer, a NiaFeb alloy layer (here, a and b are represented by at %, and satisfy the relationship of 47≦a≦77 and a+b=100), and a CoFe layer are laminated. In addition, pinned magnetic layers have heusler alloy layers, which are made of a heusler alloy such as a Co2MnGe alloy. Accordingly, the product ΔRA of a magnetic resistance variation ΔR of the magnetic detecting device and an area A of the device can have a value of 5 mΩμm2 or more.

    摘要翻译： 提供具有大ΔRA值的磁检测装置。 自由磁性层具有三层结构，其中CoFe层，NiBaFeBb合金层（这里a和b以％表示，满足 47 <= a <= 77和a + b = 100的关系）和CoFe层被层压。 此外，固定磁性层具有由诸如Co 2 MnGe合金的heusler合金制成的heusler合金层。 因此，磁检测装置的磁阻变化量ΔR的乘积DeltaRA和装置的面积A可以具有5m 2以上的值。

    Magnetic detectible head comprising free layer
    10.
    发明申请
    Magnetic detectible head comprising free layer 有权
    磁性可检测头包括自由层

    公开(公告)号：US20060198061A1

    公开(公告)日：2006-09-07

    申请号：US11364533

    申请日：2006-02-27

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/10

    摘要： There is provided a magnetic detecting element having a large ΔRA. A free magnetic layer has a three layer structure in which a CoFe layer, an NiaFeb alloy layer (where a and b are represented by at %, 0≦a≦25, and a+b=100), and a CoFe layer are laminated from the bottom. If the at % of Ni in an NiFe alloy that exists in the free magnetic layer is in this range, a spin-dependent bulk scattering coefficient β increases, and the product ΔRA of the resistance variation of the magnetic detecting element and the area of the element can be made increased.

    摘要翻译： 提供了具有大DeltaRA的磁检测元件。 自由磁性层具有三层结构，其中CoFe层，Ni / Fe合金层（其中a和b表示为％，0 <= a <= 25，a + b = 100），CoFe层从底部层叠。 如果存在于自由磁性层中的NiFe合金中的Ni的at％在该范围内，则自旋相关体散射系数β增加，并且磁检测元件的电阻变化的乘积DeltaRA与 元素可以增加。