PULSED PLASMA DEPOSITION DEVICE
    1.
    发明申请
    PULSED PLASMA DEPOSITION DEVICE 审中-公开
    脉冲等离子体沉积装置

    公开(公告)号:US20150345021A1

    公开(公告)日:2015-12-03

    申请号:US14654138

    申请日:2013-12-20

    Abstract: A pulsed plasma deposition device, including an apparatus for generating a beam of electrons, a target and a substrate, the apparatus being suitable for generating a pulsed beam of electrons directed towards said target to determine the ablation of the material of said target in the form of a plasma plume directed towards said substrate. The device includes a transportation and focussing group of the beam of electrons towards said target, arranged between said apparatus and said target and including a transportation cone, the transportation and focussing group also including a focussing electrode directly connected to the transportation cone and shaped substantially like a loop. The axis of symmetry of the focussing electrode is perpendicular, or substantially perpendicular, to the surface of the target.

    Abstract translation: 一种脉冲等离子体沉积装置,包括用于产生电子束的装置,靶和衬底,所述装置适于产生朝向所述靶的脉冲电子束,以确定所述靶的材料以所述形式 的等离子体羽流朝向所述衬底。 该装置包括朝向所述目标的电子束的输送和聚焦组,布置在所述装置和所述靶之间并且包括输送锥体,所述输送和聚焦组还包括直接连接到输送锥体的聚焦电极并且基本上形状 一个循环。 聚焦电极的对称轴线与目标表面垂直或基本垂直。

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