公开(公告)号：US20170170137A1

公开(公告)日：2017-06-15

申请号：US15116104

申请日：2015-02-03

Applicant: OSAKA UNIVERSITY

Inventor： Katsuaki SUGANUMA ,  Shijo NAGAO ,  Chulmin OH

IPC: H01L23/00

CPC classification number: H01L24/16 ,  H01L23/367 ,  H01L23/3736 ,  H01L23/3737 ,  H01L23/42 ,  H01L24/00 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05573 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/11848 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/16057 ,  H01L2224/16227 ,  H01L2224/27848 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29164 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/81007 ,  H01L2224/8183 ,  H01L2224/8184 ,  H01L2224/83007 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83855 ,  H01L2224/83815 ,  H01L2924/00014

Abstract: A bonding structure (100) of the present invention includes a substrate (110), a metal film (120), a semiconductor element (130). The substrate (110), the metal film (120), and the semiconductor element (130) are laminated in order just mentioned. The metal film (120) contains a metal diffused through stress migration, and the substrate (110) and the semiconductor element (130) are bonded together with the metal film (120) therebetween.