公开(公告)号：US20210265213A1

公开(公告)日：2021-08-26

申请号：US17255435

申请日：2019-06-27

Applicant: OSRAM OLED GmbH

Inventor： Benjamin Michaelis ,  Markus Broell ,  Robert Walter ,  Franz Eberhard ,  Michael Huber ,  Wolfgang Schmid

IPC: H01L21/78 ,  H01L33/44 ,  H01L31/0216 ,  H01L23/50 ,  H01L33/62 ,  H01L31/02 ,  H01L23/00 ,  H01L33/00 ,  H01L31/18

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

公开(公告)号：US12100791B2

公开(公告)日：2024-09-24

申请号：US17055603

申请日：2019-05-16

Applicant: OSRAM OLED GmbH

Inventor： Benjamin Michaelis

IPC: H01L33/62 ,  H01L31/02 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L31/02002 ,  H01L33/60 ,  H01L2933/0066

Abstract: A method for producing a semiconductor component may include applying a semiconductor chip over a first main surface of an insulating substrate, thinning a second main surface of the insulating substrate where the second main surface has a roughness of more than 300 nm after thinning, applying a smoothing metal layer over the second main surface of the insulating substrate, and smoothing the smoothing metal layer. A semiconductor component may include a semiconductor chip, an insulating substrate where the semiconductor chip is arranged over a first main surface of the insulating substrate and a second main surface of the insulating substrate has a roughness Ra of more than 300 nm, and a smoothing metal layer over the second main surface.

公开(公告)号：US11705370B2

公开(公告)日：2023-07-18

申请号：US17255435

申请日：2019-06-27

Applicant: OSRAM OLED GmbH

Inventor： Benjamin Michaelis ,  Markus Broell ,  Robert Walter ,  Franz Eberhard ,  Michael Huber ,  Wolfgang Schmid

IPC: H01L21/78 ,  H01L33/00 ,  H01L23/50 ,  H01L23/00 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/18 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L21/78 ,  H01L23/50 ,  H01L24/94 ,  H01L31/02002 ,  H01L31/0216 ,  H01L31/186 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/62 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/32225 ,  H01L2224/83192 ,  H01L2224/83801

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

公开(公告)号：US20210226108A1

公开(公告)日：2021-07-22

申请号：US17055603

申请日：2019-05-16

Applicant: OSRAM OLED GmbH

Inventor： Benjamin Michaelis

IPC: H01L33/62 ,  H01L31/02 ,  H01L33/60

Abstract: A method for producing a semiconductor component may include applying a semiconductor chip over a first main surface of an insulating substrate, thinning a second main surface of the insulating substrate where the second main surface has a roughness of more than 300 nm after thinning, applying a smoothing metal layer over the second main surface of the insulating substrate, and smoothing the smoothing metal layer. A semiconductor component may include a semiconductor chip, an insulating substrate where the semiconductor chip is arranged over a first main surface of the insulating substrate and a second main surface of the insulating substrate has a roughness Ra of more than 300 nm, and a smoothing metal layer over the second main surface.