公开(公告)号：US20160111609A1

公开(公告)日：2016-04-21

申请号：US14985644

申请日：2015-12-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Frank BAUMANN ,  Norbert BOENISCH ,  Tim FIEDLER ,  Frank JERMANN ,  Stefan LANGE ,  Reiner WINDISCH

IPC: H01L33/50

CPC classification number: H01L33/504 ,  C04B35/581 ,  C04B35/584 ,  C04B2235/3224 ,  C04B2235/3281 ,  C04B2235/3852 ,  C04B2235/444 ,  C04B2235/445 ,  C04B2235/446 ,  C09K11/0883 ,  C09K11/7728 ,  C09K11/7774 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Conversion LED emits primary radiation (peak wavelength 435 nm to 455 nm) and has a luminescent substance-containing layer positioned to intercept the primary radiation and convert it into secondary radiation. First and second luminescent substances are used. The first luminescent substance is a A3B5O12:Ce garnet type emitting yellow green having cation A=75 to 100 mol. % Lu, remainder Y and a Ce content of 1.5 to 2.9 mol. %, where B=10 to 40 mol. % Ga, remainder Al. The second luminescent substance is of the MAlSiN3:Eu calsine type which emits orange red, where M is Ca alone or at least 80% Ca and the remainder of M may be Sr, Ba, Mg, Li or Cu, in each case alone or in combination, wherein some of the Al up to 20%, can be replaced by B, and wherein N can be partially replaced by O, F, Cl, alone or in combination.

Abstract translation: 转换LED发射主要辐射（峰值波长435nm至455nm）并且具有定位成拦截主辐射并将其转换成次级辐射的发光物质层。 使用第一和第二发光物质。 第一发光物质是具有阳离子A = 75〜100摩尔的发射黄绿色的A3B5O12：Ce石榴石型。 ％Lu，余量Y，Ce含量为1.5〜2.9mol。 ％，其中B = 10〜40mol。 ％Ga，余量为Al。 第二发光物质是发出橙红色的MA1SiN3：Eu钙质，其中M是单独的Ca或至少80％的Ca，剩余的M可以是Sr，Ba，Mg，Li或Cu，在每种情况下都是单独的或 组合，其中一些至多20％的Al可以被B替代，并且其中N可以单独或组合地部分地被O，F，Cl替代。

公开(公告)号：US20170358718A1

公开(公告)日：2017-12-14

申请号：US15531349

申请日：2015-11-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Reiner WINDISCH ,  Joerg Erich SORG ,  Ralph WIRTH

IPC: H01L33/50 ,  H01L33/56 ,  H01L23/00 ,  H01L33/58 ,  H01L21/02

CPC classification number: H01L33/505 ,  H01L21/02639 ,  H01L24/24 ,  H01L33/50 ,  H01L33/507 ,  H01L33/508 ,  H01L33/56 ,  H01L33/58

Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometres. A method for fabricating an optoelectronic semiconductor chip, a further semiconductor chip, conversion element and luminescent material are specified.