公开(公告)号：US20240047622A1

公开(公告)日：2024-02-08

申请号：US17879902

申请日：2022-08-03

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Thomas Wunderer ,  Max Batres ,  Chris Chua

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/465 ,  H01L33/007 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  G02B27/0172

Abstract: A light emitting diode (LED) array includes bottom reflectors patterned as an array of closed shapes on a top plane of a base layer for III-N growth. A three-dimensional III-N structure is epitaxially grown around the array of closed shapes and extending above the bottom reflectors. The three-dimensional III-N structures is a contiguous crystalline structure extending across the array. A laterally grown III-N layer is formed in contact with both the reflectors and the three-dimensional III-N structures, and III-N LED layers are grown on the laterally grown layer. One or more top reflectors are grown or deposited on the III-N LED layers and located over the bottom reflectors.