Solid-state imaging apparatus and ranging apparatus

    公开(公告)号:US12200383B2

    公开(公告)日:2025-01-14

    申请号:US18098451

    申请日:2023-01-18

    Abstract: A solid-state imaging apparatus includes a plurality of pixel circuits arranged in a matrix. Each pixel circuit includes: a photodiode; a first charge storage that stores a charge; a floating diffusion region that stores a charge; a second charge storage that stores a charge; a first transfer transistor that transfers a charge from the photodiode to the first charge storage; a second transfer transistor that transfers a charge from the first charge storage to the floating diffusion region; a first reset transistor that resets the floating diffusion region; and an accumulating transistor for accumulating a charge of the floating diffusion region in the second charge storage. The capacitance of the first charge storage is greater than the capacitance of the floating diffusion region, and the capacitance of the second charge storage is greater than the capacitance of the floating diffusion region.

    Imaging device
    4.
    发明授权

    公开(公告)号:US12120448B2

    公开(公告)日:2024-10-15

    申请号:US17683465

    申请日:2022-03-01

    CPC classification number: H04N25/778 H04N25/60 H04N25/772

    Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a signal processing part configured to process a detection signal outputted from each of the pixel cells. The pixel cells each include an avalanche photodiode and output a voltage corresponding to a count number of photons received by the avalanche photodiode as the detection signal. The signal processing part includes a variation calculation part configured to calculate a variation between the pixel cells in the detection signal outputted from each of the pixel cells, and a correction calculation part configured to correct the detection signal outputted from each of the pixel cells, on the basis of the variation calculated by the variation calculation part.

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US09319609B2

    公开(公告)日:2016-04-19

    申请号:US14578560

    申请日:2014-12-22

    CPC classification number: H04N5/3745 H01L27/14643 H04N5/363 H04N5/378

    Abstract: A pixel unit included in a sensor chip includes: a first pixel connected to a first feedback amplifier which is connected to a first column signal line as an input line and a first reset drain line as an output line; and a second pixel connected to a second feedback amplifier which is connected to a second column signal line as an input line and a second reset drain line as an output line. A drain of a reset transistor of the first pixel is connected to the first reset drain line, a drain of a reset transistor of the second pixel is connected to the second reset drain line, a source of an amplifying transistor of the first pixel is connected to the first column signal line, and a source of an amplifying transistor of the second pixel is connected to the second column signal line.

    Abstract translation: 包括在传感器芯片中的像素单元包括:连接到第一反馈放大器的第一像素,其连接到作为输入线的第一列信号线和作为输出线的第一复位漏极线; 以及连接到第二反馈放大器的第二像素,其连接到作为输入线的第二列信号线和作为输出线的第二复位漏极线。 第一像素的复位晶体管的漏极连接到第一复位漏极线,第二像素的复位晶体管的漏极连接到第二复位漏极线,第一像素的放大晶体管的源极连接 到第一列信号线,并且第二像素的放大晶体管的源极连接到第二列信号线。

    Solid-state imaging device
    6.
    发明授权

    公开(公告)号:US10812729B2

    公开(公告)日:2020-10-20

    申请号:US15461159

    申请日:2017-03-16

    Abstract: A solid-state imaging device includes a detector, a count value storage, and a reader. The detector includes an avalanche amplification type light receiving element that detects a photon, and a resetter that resets an output potential of the light receiving element, and outputs a digital signal that indicates the presence or absence of incidence of a photon on the light receiving element. The count value storage performs counting by converting the digital signal output from the detector to an analog voltage, and stores the result of counting as a count value. The reader outputs an analog signal indicating the count value.

    Solid-state image sensor and imaging device

    公开(公告)号:US11153521B2

    公开(公告)日:2021-10-19

    申请号:US16688796

    申请日:2019-11-19

    Abstract: A solid-state image sensor includes a pixel array including pixel cells arranged in a matrix. Each of the pixel cells includes an avalanche photodiode, a floating diffusion which accumulates charges, a transfer transistor which connects a cathode of the avalanche photodiode to the floating diffusion, a first reset transistor for resetting charges collected in the cathode of the avalanche photodiode, a second reset transistor for resetting charges accumulated in the floating diffusion, an amplification transistor for converting a charge amount of charges accumulated in the floating diffusion into a voltage, a memory which accumulates charges, and a count transistor which connects the floating diffusion to the memory.

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