公开(公告)号：US10090350B2

公开(公告)日：2018-10-02

申请号：US15292512

申请日：2016-10-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masato Kobayashi ,  Manabu Usuda ,  Toshitaka Akahoshi

IPC: H01L27/146 ,  H01L21/56 ,  H01L31/0224 ,  H01L31/0203 ,  H01L31/107

Abstract: A light receiving device includes: a photoelectric converter including a photodiode and a first pixel electrode disposed on a lower surface of the photodiode; a scanning circuit connected to the first pixel electrode; an electrode pad disposed on a periphery of the scanning circuit; a transparent conductive film extending from an upper surface of the photodiode to the electrode pad, the transparent conductive film having an inclination relative to the upper surface of the photodiode, between the photodiode and the electrode pad; and a sealing resin filled in a space between the photoelectric converter and the scanning circuit, and in a space under the transparent conductive film around the photoelectric converter.

公开(公告)号：US10923614B2

公开(公告)日：2021-02-16

申请号：US15328648

申请日：2015-07-09

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yusuke Sakata ,  Manabu Usuda ,  Mitsuyoshi Mori ,  Yutaka Hirose ,  Yoshihisa Kato

IPC: H01L31/107 ,  H01L27/146 ,  H02S40/44

Abstract: A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p− type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p− type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p− type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p− type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p− type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.

公开(公告)号：US10192920B2

公开(公告)日：2019-01-29

申请号：US15913106

申请日：2018-03-06

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yusuke Sakata ,  Manabu Usuda ,  Mitsuyoshi Mori ,  Yoshihisa Kato

IPC: H01L31/107 ,  H01L27/146 ,  H01L31/00 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378

Abstract: A solid-state imaging device includes a substrate of P type and a wiring layer. The substrate includes: a first semiconductor region disposed on a first principle surface and extending in a direction from the first principal surface toward the second principal surface; a second semiconductor region disposed between the second principal surface and the first semiconductor region and connected to the first semiconductor region; a P type semiconductor region disposed between the second principal surface and the second semiconductor regions of two pixels; and a pixel isolation region disposed inside the substrate, between the first semiconductor regions of the two pixels. The second semiconductor region and the P type semiconductor region form an avalanche multiplication region.

公开(公告)号：US12190593B2

公开(公告)日：2025-01-07

申请号：US18331532

申请日：2023-06-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Manabu Usuda ,  Shinzo Koyama ,  Yuki Sugiura

IPC: G06V20/52 ,  G06T7/11 ,  G06T7/50 ,  G06T7/70 ,  G06V10/74 ,  G06V20/58

Abstract: It is made possible to monitor the periphery of a target object more accurately, using an imaging device that generates distance image data by sub-range analysis. For a target object present across first and second distance zones adjacent to each other, a first position at a near end position of the first distance zone, a second position at a boundary position between the first and second distance zones, and a third position indicating the position at a far end position of the second distance zone are obtained. Location data of the target object is generated based on location information of the second position with respect to a straight line connecting the first position and third position.

公开(公告)号：US11153521B2

公开(公告)日：2021-10-19

申请号：US16688796

申请日：2019-11-19

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Shigetaka Kasuga ,  Manabu Usuda ,  Kentaro Nakanishi

IPC: H04N5/3745 ,  H01L27/146 ,  H01L31/107

Abstract: A solid-state image sensor includes a pixel array including pixel cells arranged in a matrix. Each of the pixel cells includes an avalanche photodiode, a floating diffusion which accumulates charges, a transfer transistor which connects a cathode of the avalanche photodiode to the floating diffusion, a first reset transistor for resetting charges collected in the cathode of the avalanche photodiode, a second reset transistor for resetting charges accumulated in the floating diffusion, an amplification transistor for converting a charge amount of charges accumulated in the floating diffusion into a voltage, a memory which accumulates charges, and a count transistor which connects the floating diffusion to the memory.

公开(公告)号：US09807369B2

公开(公告)日：2017-10-31

申请号：US14043899

申请日：2013-10-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Manabu Usuda ,  Kazutoshi Onozawa ,  Kazuo Fujiwara

IPC: H04N13/02 ,  G01S17/02 ,  G01S17/89 ,  G01S7/491 ,  G01C11/06

CPC classification number: H04N13/239 ,  G01C11/06 ,  G01S7/4914 ,  G01S17/023 ,  G01S17/89 ,  H04N13/254 ,  H04N13/257 ,  H04N13/271

Abstract: A 3D imaging apparatus includes: a first image capturing camera generating a base image to be used for obtaining a first range image showing a three-dimensional character of an object; a second image capturing camera generating a reference image to be used for obtaining the first range image; a stereo matching unit searching for corresponding pixels between the base image and the reference image, and generating a first range image by calculating a disparity between the corresponding pixels; and a light source emitting to the object infrared light whose intensity is modulated. The first image capturing camera further generates a second range image by receiving a reflected light in synchronization with the modulated intensity. The reflected light is the infrared light reflected off the object. The second range image includes range information on a range between a point of reflection off the object and the first imaging unit.

公开(公告)号：US09743026B2

公开(公告)日：2017-08-22

申请号：US14740113

申请日：2015-06-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Manabu Usuda ,  Yutaka Hirose ,  Yoshihisa Kato ,  Nobukazu Teranishi

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745 ,  G01J1/44 ,  H01L31/107 ,  H04N5/357 ,  H04N5/361

CPC classification number: H04N5/378 ,  G01J1/44 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14665 ,  H01L31/107 ,  H01L2924/381 ,  H04N5/357 ,  H04N5/361 ,  H04N5/369 ,  H04N5/37455

Abstract: A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.