公开(公告)号：US20170152599A1

公开(公告)日：2017-06-01

申请号：US15298703

申请日：2016-10-20

Applicant: PHILTECH, Inc.

Inventor： Yuji FURUMURA ,  Noriyoshi SHIMIZU ,  Shinji NISHIHARA ,  Eri HAIKATA

IPC: C23C16/46 ,  H01L51/56 ,  H01L51/52 ,  C23C16/455

CPC classification number: C23C16/46 ,  C08J7/04 ,  C23C16/0272 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/545 ,  H01L51/5253 ,  H01L51/56

Abstract: Source gases are instantaneously heated, at least two kinds of generated gas molecular species generated by instantaneously heating the source gases are independently introduced and brought into contact with a substrate having a temperature lower than heating temperature of the instantaneously-heating mechanism for source gas to form a first compound film and to form a second compound film containing at least one element of elements contained in the first compound film, and a multilayer film composed of at least the first compound film and the second compound film is produced.

公开(公告)号：US20170335454A1

公开(公告)日：2017-11-23

申请号：US15586488

申请日：2017-05-04

Applicant: PHILTECH Inc.

Inventor： Yuji FURUMURA ,  Noriyoshi SHIMIZU ,  Shinji NISHIHARA ,  Eri HAIKATA ,  Masato ISHIKAWA

IPC: C23C16/455 ,  C23C16/30 ,  H01L51/52 ,  G02F1/1333 ,  H01L31/0216

CPC classification number: C23C16/45527 ,  C23C16/30 ,  C23C16/403 ,  C23C16/45523 ,  C23C16/45557 ,  G02F1/133345 ,  G02F2201/501 ,  H01L31/02167 ,  H01L51/5253 ,  Y02E10/50

Abstract: A film-forming method for forming a film in a film-forming apparatus includes generating first gas molecular species and second gas molecular species by causing the first source gas and the second source gas accumulated in the accumulation mechanisms to pass through respective instantaneously-heating units, sharply raising partial pressure of the first gas molecular species and partial pressure of the second gas molecular species by projectingly supplying the first gas molecular species and the second gas molecular species to the reaction chamber in which the substrate has been placed, which has been depressurized, and which has a constant capacity; bringing the first gas molecular species or the second gas molecular species into reaction by alternately repeatedly guiding the first gas molecular species or the second gas molecular species to a surface of the substrate, and forming a compound film on the surface of the substrate.

公开(公告)号：US20180223431A1

公开(公告)日：2018-08-09

申请号：US15949410

申请日：2018-04-10

Applicant: PHILTECH, Inc.

Inventor： Yuji FURUMURA ,  Noriyoshi SHIMIZU ,  Shinji NISHIHARA ,  Eri HAIKATA

IPC: C23C16/46 ,  C23C16/455 ,  C23C16/02 ,  H01L51/52 ,  C23C16/54 ,  C23C16/452 ,  C08J7/04 ,  H01L51/56

CPC classification number: C23C16/46 ,  C08J7/04 ,  C23C16/0272 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/545 ,  H01L51/5253 ,  H01L51/56

Abstract: Source gases are instantaneously heated, at least two kinds of generated gas molecular species generated by instantaneously heating the source gases are independently introduced and brought into contact with a substrate having a temperature lower than heating temperature of the instantaneously-heating mechanism for source gas to form a first compound film and to form a second compound film containing at least one element of elements contained in the first compound film, and a multilayer film composed of at least the first compound film and the second compound film is produced.