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公开(公告)号:US20180376081A1
公开(公告)日:2018-12-27
申请号:US16059517
申请日:2018-08-09
Inventor: Makoto IKUMA , Takahiro MUROSHIMA , Takayasu KITO , Hiroyuki AMIKAWA , Tetsuya ABE
IPC: H04N5/345 , H04N5/3745 , H04N5/369
CPC classification number: H04N5/345 , H01L27/146 , H03M1/0845 , H03M1/123 , H03M1/56 , H04N5/357 , H04N5/3698 , H04N5/3745 , H04N5/378
Abstract: A solid-state imaging device includes: a pixel array unit in which a plurality of pixels are arranged in rows and columns; a plurality of column signal lines which are provided in one-to-one correspondence with pixel columns; a column processor including a plurality of column AD circuits provided in one-to-one correspondence with the plurality of column signal lines; a power supply variation detector which is connected to a power supply wire through which a power supply voltage is transmitted to each of the pixels, and which detects, in correspondence with pixel rows, power supply variation components attributed to variations in the power supply voltage; and a power supply variation corrector which corrects, for each of the pixel rows, a pixel signal detected by the column processor, using the power supply variation components detected by the power supply variation detector.
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公开(公告)号:US20190288020A1
公开(公告)日:2019-09-19
申请号:US16431277
申请日:2019-06-04
Inventor: Makoto IKUMA , Hiroyuki AMIKAWA , Takayasu KITO , Shinichi OGITA , Junichi MATSUO , Yasuyuki ENDOH , Katsumi TOKUYAMA , Tetsuya ABE
IPC: H01L27/146 , H01L27/142 , H04N5/235 , H04N5/232 , H04N5/225
Abstract: A solid-state imaging apparatus includes a plurality of high-sensitivity pixels that are arranged in a matrix, and perform a photoelectric conversion at a predetermined sensitivity; a plurality of low-sensitivity pixels that are arranged in a matrix in gaps between the plurality of high-sensitivity pixels, and perform a photoelectric conversion at a lower sensitivity than the predetermined sensitivity; and a signal processor that generates a pixel signal by (i) detecting a difference signal between a signal from the plurality of high-sensitivity pixels and a signal from the plurality of low-sensitivity pixels, and (ii) correcting the signal from the plurality of high-sensitivity pixels using the difference signal.
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公开(公告)号:US20180376083A1
公开(公告)日:2018-12-27
申请号:US16059485
申请日:2018-08-09
Inventor: Makoto IKUMA , Takahiro MUROSHIMA , Takayasu KITO , Hiroyuki AMIKAWA , Tetsuya ABE
CPC classification number: H04N5/359 , G02B26/10 , H04N5/23229 , H04N5/35563 , H04N5/35581 , H04N5/3559 , H04N5/378
Abstract: A solid-state imaging device includes: a pixel including a photoelectric converter that generates a charge and a charge accumulator that converts the charge into a voltage; a controller that causes the pixel to perform exposure in a first exposure mode and convert the charge into the voltage with a first gain to output a first pixel signal, and causes the pixel to perform exposure in a second exposure mode and convert the charge into the voltage with a second gain to output a second pixel signal, the second exposure mode being shorter in exposure time than the first exposure mode, and the second gain being lower than the first gain; and a signal processor that synthesizes the second pixel signal after amplification and the first pixel signal.
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公开(公告)号:US20180359439A1
公开(公告)日:2018-12-13
申请号:US16107687
申请日:2018-08-21
Inventor: Masaaki YANAGIDA , Takayasu KITO , Yoshiaki SATOU
CPC classification number: H04N5/3698 , H01L27/307 , H04N5/3532 , H04N5/378
Abstract: An imaging device having a pixel including a photoelectric converter that converts incident light into charges, and a reset transistor having a first source, a first drain and a first gate, one of the first source and the first drain coupled to the photoelectric converter. The imaging device further including first voltage generating circuity that generates a first voltage; second voltage generating circuity that generates a second voltage, the second voltage generating circuity being different from the first voltage generating circuity; and first switching circuity that causes either the first voltage generating circuity or the second voltage generating circuity to selectively couple to the other of the first source and the first drain of the reset transistor.
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公开(公告)号:US20160014363A1
公开(公告)日:2016-01-14
申请号:US14858481
申请日:2015-09-18
Inventor: Takayasu KITO , Hiroyuki AMIKAWA , Masahiro HIGUCHI , Kenichi ORIGASA , Hiroshi FUJINAKA
CPC classification number: H04N5/374 , H04N5/3577 , H04N5/3698 , H04N5/3745 , H04N5/378
Abstract: A solid-state imaging device includes: a plurality of unit cells each including at least one light receiving unit and an amplifying transistor which outputs an amplified signal corresponding to an amount of the signal charge photoelectrically converted by the light receiving unit; a plurality of vertical signal lines each for receiving an output signal from the amplifying transistor; a pixel power supply line for supplying a power supply voltage to the amplifying transistor; a plurality of constant current source transistors each connected to a different one of the vertical signal lines; and a bias circuit which controls an amount of current to be supplied to each of the constant current source transistors, based on a variation in the power supply voltage.
Abstract translation: 固态成像装置包括:多个单位电池,每个单元电池包括至少一个光接收单元和放大晶体管,其输出对应于由光接收单元光电转换的信号电荷的量的放大信号; 多个垂直信号线,各自用于接收来自放大晶体管的输出信号; 用于向放大晶体管提供电源电压的像素电源线; 多个恒流源晶体管,每个连接到所述垂直信号线中的不同的一个; 以及偏置电路,其基于电源电压的变化来控制要提供给每个恒流源晶体管的电流量。
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