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    IMAGING DEVICE
    1.
    发明申请
    IMAGING DEVICE 有权
    成像装置

    公开(公告)号：US20160079297A1

    公开(公告)日：2016-03-17

    申请号：US14846947

    申请日：2015-09-07

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： YOSHIHIRO SATO ,  YOSHINORI TAKAMI ,  KOSAKU SAEKI ,  JUNJI HIRASE

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14638 ,  H01L27/14665

    Abstract: An imaging device including a unit pixel cell comprising: a semiconductor substrate including a first conductivity type region of a first conductivity type, a first and second impurity regions of a second conductivity type provided in the first conductivity type region; a photoelectric converter located above the semiconductor substrate; and a first transistor including a gate electrode and at least a part of the second impurity region as a source or a drain. The first impurity region is at least partially located in a surface of the semiconductor substrate and electrically connected to the photoelectric converter. The second impurity region is electrically connected to the photoelectric converter via the first impurity region and has an impurity concentration lower than that of the first impurity region. The second impurity region at least partially overlaps the gate electrode in a plan view.

    Abstract translation: 一种包括单位像素单元的成像装置，包括：半导体衬底，包括第一导电类型的第一导电类型区域，设置在第一导电类型区域中的第二导电类型的第一和第二杂质区域; 位于半导体衬底上方的光电转换器; 以及第一晶体管，其包括栅极电极和至少一部分第二杂质区域作为源极或漏极。 第一杂质区域至少部分地位于半导体衬底的表面中并电连接到光电转换器。 第二杂质区经由第一杂质区与光电转换器电连接，杂质浓度低于第一杂质区的杂质浓度。 第二杂质区域在平面图中至少部分地与栅电极重叠。

    IMAGING DEVICE
    2.
    发明申请
    IMAGING DEVICE 有权

    公开(公告)号：US20210273011A1

    公开(公告)日：2021-09-02

    申请号：US17322960

    申请日：2021-05-18

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： YOSHIHIRO SATO ,  YOSHINORI TAKAMI

    IPC: H01L27/146

    Abstract: An imaging device includes a semiconductor substrate, a photoelectric converter that converts incident light into a charge, a first impurity region located in the semiconductor substrate, where the first impurity region accumulates the charge and contains impurities of a first conductivity type, a second impurity region located in the semiconductor substrate, where the second impurity region contains impurities of the first conductivity type and is different from the first impurity region, a third impurity region located in the semiconductor substrate, between the first impurity region and the second impurity region in plan view, where the third impurity region contains impurities of a second conductivity type that differs from the first conductivity type, and a first contact located on the semiconductor substrate and electrically connected to the third impurity region. The first contact includes a semiconductor containing impurities of the second conductivity type.

    IMAGING DEVICE
    3.
    发明申请
    IMAGING DEVICE 有权

    公开(公告)号：US20210351212A1

    公开(公告)日：2021-11-11

    申请号：US17232408

    申请日：2021-04-16

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： MORIKAZU TSUNO ,  TAKANORI DOI ,  YOSHINORI TAKAMI

    IPC: H01L27/146

    Abstract: An imaging device includes a photoelectric conversion layer, a counter electrode provided above the photoelectric conversion layer, a pixel electrode that faces the counter electrode with the photoelectric conversion layer disposed between the counter electrode and the pixel electrode, and a contact plug covered with the pixel electrode and connected to the pixel electrode. The pixel electrode includes a first layer and a second layer provided on the first layer in contact with the first layer. A surface of the first layer that is in contact with the second layer has a protrusion that protrudes upward.

    IMAGING DEVICE
    5.
    发明申请
    IMAGING DEVICE 审中-公开

    公开(公告)号：US20200083274A1

    公开(公告)日：2020-03-12

    申请号：US16535963

    申请日：2019-08-08

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： JUNJI HIRASE ,  YOSHINORI TAKAMI ,  YOSHIHIRO SATO

    IPC: H01L27/146

    Abstract: An imaging device includes: a semiconductor layer including a first region of a first conductivity, a second region of a second conductivity opposite to the first conductivity, and a third region of the second conductivity; a photoelectric converter electrically connected to the first region and converting light into charge; a first transistor including a first source, a first drain, and a first gate above the second region, the first region corresponding to the first source or drain; and a second transistor including a second source, a second drain, and a second gate of the second conductivity above the third region, the first region corresponding to the second source or drain, and the second gate being electrically connected to the first region. The concentration of an impurity of the second conductivity in the third region is higher than that of an impurity of the second conductivity in the second region.

    IMAGING DEVICE
    7.
    发明申请
    IMAGING DEVICE 审中-公开

    公开(公告)号：US20190027524A1

    公开(公告)日：2019-01-24

    申请号：US16033723

    申请日：2018-07-12

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： YOSHIHIRO SATO ,  JUNJI HIRASE ,  YOSHINORI TAKAMI

    IPC: H01L27/146 ,  H01L27/30

    CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/307 ,  H04N5/378

    Abstract: An imaging device includes: a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region, an area of the first diffusion region being less than an area of the second diffusion region in a plan view, a photoelectric converter configured to convert light into charges, and a first transistor including a source and a drain, the first diffusion region functioning as one of the source and the drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges.

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