Asymmetrically excited semiconductor injection laser
    1.
    发明授权
    Asymmetrically excited semiconductor injection laser 失效
    非对称激光半导体注入激光器

    公开(公告)号:US3916339A

    公开(公告)日:1975-10-28

    申请号:US52705374

    申请日:1974-11-25

    Applicant: RCA CORP

    CPC classification number: H01S5/0425 H01S5/0421 H01S5/223 H01S5/305

    Abstract: A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region.

    Abstract translation: 改进二极管激光器以便在单个纵向模式中产生输出。 激光器具有具有不同导电类型材料的两个区域的矩形体。 从矩形体的一个表面延伸到不同导电性材料的区域之一中的是第三区域。 虽然第三区域由与其延伸的区域相同的一般导电类型的材料组成,但是它更加掺杂有导电性改性剂(更具导电性)。 该第三区域沿主体的端部之间的一个表面延伸并且与主体的侧面间隔开。 电接触条被定位在一个表面上,使得其宽度的一部分与第三区域的宽度的一部分重叠。

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