Abstract:
A high power semiconductor device comprising a housing having an enclosed chamber therein and a plurality of semiconductor elements mounted in the chamber and electrically connected in series. The semiconductor elements are individually mounted in spaced relation on a plate of an electrically insulating material which is a good conductor of heat and are electrically connected between a metal body secured to one side of the plate and a metal cover secured to the other side of the plate.
Abstract:
A high efficiency mode avalanche diode oscillator is disclosed. The avalanche diode and a tuning capacitor are connected in parallel at a high microwave voltage point at one end of a resonant transmission line section electrically one-eighth wavelength long at the operating frequency of the oscillator, so as to match the complex impedance of the diode to a load impedance, and to provide the high efficiency mode of operation.
Abstract:
An L-shaped thermally conductive substrate is adapted to be mounted in a microwave stripline circuit structure. Two semiconductor elements are mounted on the substrate, one on each leg of the L-shaped structure. The semiconductor elements are electrically interconnected in such a manner as to reduce parasitic reactances to a minimum.
Abstract:
A frequency multiplier which features a varactor diode, two coupled transmission lines for input impedance transformation and two coupled transmission lines for output impedance transformation. An intermediate strip conductor is placed between the respective coupled transmission lines so as to provide nonspatially coupling between the lines.