SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20170033045A1

    公开(公告)日:2017-02-02

    申请号:US15163647

    申请日:2016-05-24

    Abstract: Object is to provide a semiconductor device with fewer malfunctions. The semiconductor device has a semiconductor chip having a first-signal-output circuit operating at a first-power-supply voltage, a second-signal-output circuit operating at a second power supply voltage, and a plurality of bump electrodes; and a wiring board including a first main surface facing the main surface of the semiconductor chip, a second main surface opposite to the first main surface with a wiring layer therebetween, first external terminals on the first main surface, and second ones on the second main surface; the former being mounted on the latter to couple the bump electrodes to the first external terminals. When viewed from the second main surface, second external terminals to be supplied with the first signal and the second signal are arranged closer to the semiconductor chip than second external terminals to be supplied with the first power supply voltage and the second power supply voltage.

    Abstract translation: 目的是提供具有更少故障的半导体器件。 半导体器件具有半导体芯片,具有以第一电源电压工作的第一信号输出电路,以第二电源电压工作的第二信号输出电路和多个凸块电极; 以及布线基板,其具有与所述半导体芯片的主面相对的第一主面,与所述第一主面相对的第二主面,在所述第一主面之间具有布线层,所述第一主面与所述第一主面的第一外部端子, 表面; 前者安装在后者上以将凸块电极耦合到第一外部端子。 当从第二主表面观察时,被提供有第一信号的第二外部端子和第二信号被布置成比第二外部端子更靠近半导体芯片以被提供第一电源电压和第二电源电压。

    DIFFERENTIAL AMPLIFIER CIRCUIT
    3.
    发明公开

    公开(公告)号:US20240039492A1

    公开(公告)日:2024-02-01

    申请号:US18359116

    申请日:2023-07-26

    CPC classification number: H03F3/45071

    Abstract: A differential amplifier includes a first differential amplifier circuit as a first stage, a second differential amplifier circuit having a common mode feedback circuit in a second stage, and a feedback differential circuit configured to multiply a differential signal between a differential output of the first differential amplifier circuit and a differential input of the second differential amplifier circuit by a magnitude of a differential output of the common mode feedback circuit.

    RADAR DISTANCE MEASURING DEVICE AND RADAR DISTANCE MEASURING METHOD

    公开(公告)号:US20220260698A1

    公开(公告)日:2022-08-18

    申请号:US17666877

    申请日:2022-02-08

    Abstract: A radar distance measuring device having a BPF type ΣΔADC and capable of controlling a band of a BBF and modulation setting of a chirp signal in conjunction therewith is provided. A chirp signal generated by a synthesizer is distributed to a transmission antenna and each of mixers at a reception side. The chirp signal is amplified and irradiated from the transmission antenna to an object as radar. The radar reflected by the objects received by reception antennas, and is then mixed with the chirp signal from the synthesizer by the mixers to generate IF signals. These IF signals are respectively outputted to ADCs via anti-aliasing filters. Each of the ADCs is as oversampling ΣΔADC. The IF signals are sampled by the ΣΔADC, and are converted into a digital signal.

    SEMICONDUCTOR DEVICE
    5.
    发明申请

    公开(公告)号:US20190006278A1

    公开(公告)日:2019-01-03

    申请号:US16126931

    申请日:2018-09-10

    Abstract: Object is to provide a semiconductor device with fewer malfunctions. The semiconductor device has a semiconductor chip having a first-signal-output circuit operating at a first-power-supply voltage, a second-signal-output circuit operating at a second power supply voltage, and a plurality of bump electrodes; and a wiring board including a first main surface facing the main surface of the semiconductor chip, a second main surface opposite to the first main surface with a wiring layer therebetween, first external terminals on the first main surface, and second ones on the second main surface; the former being mounted on the latter to couple the bump electrodes to the first external terminals. When viewed from the second main surface, second external terminals to be supplied with the first signal and the second signal are arranged closer to the semiconductor chip than second external terminals to be supplied with the first power supply voltage and the second power supply voltage.

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