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    SEMICONDUCTOR DEVICE HAVING HIGH FREQUENCY WIRING AND DUMMY METAL LAYER AT MULTILAYER WIRING STRUCTURE
    1.
    发明申请
    SEMICONDUCTOR DEVICE HAVING HIGH FREQUENCY WIRING AND DUMMY METAL LAYER AT MULTILAYER WIRING STRUCTURE 有权
    具有多层布线结构的高频接线和多层金属层的半导体器件

    公开(公告)号：US20150235972A1

    公开(公告)日：2015-08-20

    申请号：US14706387

    申请日：2015-05-07

    申请人： Renesas Electronics Corporation

    发明人： Shinichi UCHIDA

    IPC分类号： H01L23/66 ,  H01L23/00 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

    CPC分类号： H01L23/5283 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/585 ,  H01L2223/6611 ,  H01L2924/0002 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00

    摘要： A semiconductor device includes a semiconductor substrate, a first wiring layer including a plurality of first dummy metals provided inside an inductor wiring, a plurality of second dummy metals provided outside the inductor wiring, and a plurality of third dummy metals provided to overlap the inductor wiring in a plan view, and a second wiring layer provided between the semiconductor substrate and the first wiring layer. The second wiring layer includes the inductor wiring formed in the second wiring layer, a first region surrounding the inductor wiring which includes a plurality of fourth dummy metals, and a second region surrounding the first region which includes a plurality of fifth dummy metals. A density of the fourth dummy metals is lower than a density of the fifth dummy metals.

    摘要翻译： 半导体器件包括半导体衬底，设置在电感器布线内部的多个第一虚拟金属的第一布线层，设置在电感器布线外部的多个第二虚设金属和设置成与电感器布线重叠的多个第三虚设金属 以及设置在半导体衬底和第一布线层之间的第二布线层。 第二布线层包括形成在第二布线层中的电感器布线，围绕包括多个第四虚设金属的电感器布线的第一区域和围绕包括多个第五虚拟金属的第一区域的第二区域。 第四虚拟金属的密度低于第五虚拟金属的密度。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210366827A1

    公开(公告)日：2021-11-25

    申请号：US17231623

    申请日：2021-04-15

    申请人： RENESAS ELECTRONICS CORPORATION

    发明人： Shinichi UCHIDA ,  Yasutaka NAKASHIBA ,  Shinichi KUWABARA

    IPC分类号： H01L23/522 ,  H01L23/00 ,  H01F27/28

    摘要： A semiconductor device includes: a first substrate; a multilayer wiring layer formed on the first substrate; a first inductor formed into a meander shape on the multilayer wiring layer in a plan view; and a second inductor formed into a meander shape on the multilayer wiring layer in a plain view, and arranged so as to be close to the first inductor in a plan view and not to overlap with the first inductor. A transformer is configured by the first inductor and the second inductor and, in a plan view, the first inductor and the second inductor extend along a first direction in which one side of the first substrate extends.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180047667A1

    公开(公告)日：2018-02-15

    申请号：US15619703

    申请日：2017-06-12

    申请人： Renesas Electronics Corporation

    发明人： Shinichi UCHIDA ,  Yasutaka NAKASHIBA

    IPC分类号： H01L23/522 ,  H01L49/02

    CPC分类号： H01L23/5227 ,  H01L23/5225 ,  H01L23/5226 ,  H01L28/10

    摘要： A semiconductor device is provided with a SOI substrate including a semiconductor substrate, a BOX layer on the semiconductor substrate, and a semiconductor layer on the BOX layer, a multilayer wiring formed over a main surface of the SOI substrate, and an inductor comprised of the multilayer wiring. In a region located below the inductor, the BOX layer and the semiconductor layer are separated into a plurality of regions by an element isolation portion, and a dummy gate electrode is formed on a part of the semiconductor layer, which is located in each of the plurality of regions, via a dummy gate insulating film.

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140078709A1

    公开(公告)日：2014-03-20

    申请号：US14012324

    申请日：2013-08-28

    申请人： Renesas Electronics Corporation

    发明人： Takasuke HASHIMOTO ,  Shinichi UCHIDA ,  Yasutaka NAKASHIBA ,  Takatsugu NEMOTO

    IPC分类号： H01L23/58

    CPC分类号： H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L2924/0002 ,  H05K9/00 ,  H01L2924/00

    摘要： To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor.An inductor surrounds an internal circuit in a planar view and also is coupled electrically to the internal circuit. The upper side of the inductor is covered by an upper shield part and the lower side of the inductor is covered by a lower shield part. The upper shield part is formed by the use of a multilayered wiring layer. The upper shield part has plural first openings. The first opening overlaps the inductor in the planar view.

    摘要翻译： 为了抑制由电感器引起的噪声泄漏到外部，并且还被配置为使得磁场强度变化到达电感器。 电感器在平面视图中围绕内部电路，并且还与内部电路电连接。 电感器的上侧由上屏蔽部分覆盖，电感器的下侧由下屏蔽部分覆盖。 上部屏蔽部分通过使用多层布线层形成。 上部屏蔽部分具有多个第一开口。 第一个开口在平面视图中与电感器重叠。