公开(公告)号：US20160191012A1

公开(公告)日：2016-06-30

申请号：US15004084

申请日：2016-01-22

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Andrew F. Folkmann ,  Robert Aigner ,  Marcus Granger-Jones

IPC: H03H9/58 ,  H03H9/205

CPC classification number: H03H9/542 ,  H03H9/605 ,  H03H9/6483 ,  H03H9/6489

Abstract: An RF ladder filter having a parallel capacitance compensation circuit is disclosed. The parallel capacitance compensation circuit is made up of a first inductive element with a first T-terminal and a first end coupled to a first ladder terminal and a second inductive element with a second T-terminal that is coupled to the first T-terminal of the first inductive element and a second end coupled to a second ladder terminal. Further included is a compensating acoustic RF resonator (ARFR) having a fixed node terminal and a third T-terminal that is coupled to the first T-terminal of the first inductive element and the second T-terminal of the second inductive element, and a finite number of series-coupled ladder ARFRs, wherein the parallel capacitance compensation circuit is coupled across one of the finite number of series-coupled ARFRs by way of the first ladder terminal and the second ladder terminal.

Abstract translation: 公开了一种具有并联电容补偿电路的RF梯形滤波器。 并联电容补偿电路由具有第一T端和第一端耦合到第一梯形终端的第一电感元件和与第二电感元件耦合的第二电感元件组成，第二电感元件连接到第一T端的第一T端 第一电感元件和耦合到第二梯形终端的第二端。 还包括具有固定节点终端的补偿声RF谐振器（ARFR）和耦合到第一电感元件的第一T端和第二电感元件的第二T端的第三T端，以及 有限数量的串联耦合梯形ARFR，其中并联电容补偿电路通过第一梯形终端和第二梯形终端耦合在有限数量的串联耦合ARFR之一上。

公开(公告)号：US09837984B2

公开(公告)日：2017-12-05

申请号：US15004084

申请日：2016-01-22

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Andrew F. Folkmann ,  Robert Aigner ,  Marcus Granger-Jones

IPC: H03H9/54 ,  H03H9/64 ,  H03H9/60

CPC classification number: H03H9/542 ,  H03H9/605 ,  H03H9/6483 ,  H03H9/6489

Abstract: An RF ladder filter having a parallel capacitance compensation circuit is disclosed. The parallel capacitance compensation circuit is made up of a first inductive element with a first T-terminal and a first end coupled to a first ladder terminal and a second inductive element with a second T-terminal that is coupled to the first T-terminal of the first inductive element and a second end coupled to a second ladder terminal. Further included is a compensating acoustic RF resonator (ARFR) having a fixed node terminal and a third T-terminal that is coupled to the first T-terminal of the first inductive element and the second T-terminal of the second inductive element, and a finite number of series-coupled ladder ARFRs, wherein the parallel capacitance compensation circuit is coupled across one of the finite number of series-coupled ARFRs by way of the first ladder terminal and the second ladder terminal.

公开(公告)号：US20160191014A1

公开(公告)日：2016-06-30

申请号：US14757651

申请日：2015-12-23

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Jean-Frederic Chiron ,  Marcus Granger-Jones ,  Andrew F. Folkmann ,  Robert Aigner

IPC: H03H9/54 ,  H01Q1/50 ,  H03H9/205

CPC classification number: H03H9/542 ,  H01Q1/50 ,  H03H9/568 ,  H03H9/605 ,  H03H9/64 ,  H03H9/6483 ,  H04B1/04 ,  H04B1/10 ,  H04B1/16

Abstract: RF circuitry, which includes a first acoustic RF resonator (ARFR) and a first compensating ARFR, is disclosed. A first inductive element is coupled between the first compensating ARFR and a first end of the first ARFR. A second inductive element is coupled between the first compensating ARFR and a second end of the first ARFR. The first compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.

Abstract translation: 公开了包括第一声RF谐振器（ARFR）和第一补偿ARFR的RF电路。 第一电感元件耦合在第一补偿ARFR和第一ARFR的第一端之间。 第二电感元件耦合在第一补偿ARFR和第一ARFR的第二端之间。 第一补偿ARFR，第一电感元件和第二电感元件至少部分地补偿第一ARFR的并联电容。

公开(公告)号：US10381998B2

公开(公告)日：2019-08-13

申请号：US15087423

申请日：2016-03-31

Applicant: RF Micro Devices, Inc.

Inventor： Shogo Inoue ,  Marc Solal ,  Robert Aigner

IPC: H03H3/10 ,  H03H3/02 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64 ,  H03H9/02

Abstract: A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance T over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. The modifying and bonding steps may be performed in any order. The modified top portion of the silicon substrate prevents the creation of a parasitic conductance within that portion during operation of the SAW device.

公开(公告)号：US20170033768A1

公开(公告)日：2017-02-02

申请号：US15078138

申请日：2016-03-23

Applicant: RF Micro Devices, Inc.

Inventor： Robert Aigner ,  Ebrahim Andideh

IPC: H03H9/25

CPC classification number: H03H3/04 ,  H03H3/08 ,  H03H9/02055 ,  H03H9/02622

Abstract: Stealth-dicing-compatible devices and methods to prevent acoustic backside reflections on acoustic wave devices are disclosed. An acoustic wave device comprises a substrate having opposing top and bottom surfaces, where a first portion of the bottom surface has a higher roughness than a second portion of the bottom surface, and an acoustic resonator over the top surface of the substrate. The acoustic resonator comprises a piezoelectric layer having opposing top and bottom surfaces and a plurality of electrodes, at least some of which are disposed on the top surface of the piezoelectric layer. The first portion of the bottom surface of the substrate is below and opposite from the acoustic resonator, and the second portion of the bottom surface of the substrate is not located below and opposite from the acoustic resonator. Multiple first portions, each separated from the other by second portions, may exist.

Abstract translation: 公开了用于防止声波装置上的声学背面反射的隐形切割兼容装置和方法。 声波装置包括具有相对的顶表面和底表面的基底，其中底表面的第一部分具有比底表面的第二部分更高的粗糙度，以及在基底顶表面上的声共振器。 声谐振器包括具有相对的顶表面和底表面的压电层和多个电极，其中至少一些电极设置在压电层的顶表面上。 衬底的底表面的第一部分在声谐振器的下面和相对之间，并且衬底的底表面的第二部分不位于声谐振器的下方和相对的位置。 可以存在多个第一部分，每个第一部分通过第二部分彼此分开。

公开(公告)号：US20170033764A1

公开(公告)日：2017-02-02

申请号：US15087225

申请日：2016-03-31

Applicant: RF Micro Devices, Inc.

Inventor： Shogo Inoue ,  Marc Solal ,  Robert Aigner

IPC: H03H9/02

Abstract: A bonded wafer with low carrier lifetime in silicon comprises a silicon substrate having opposing top and bottom surfaces, the structure of the silicon in a top portion of the silicon substrate having been modified to reduce the carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion; a piezoelectric layer bonded over the top surface of the silicon substrate and having opposing top and bottom surfaces separated by a distance T; and a pair of electrodes having fingers that are inter-digitally dispersed on the top surface of the piezoelectric layer in a pattern having a center-to-center distance D between adjacent fingers of the same electrode, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. Modification of the top portion of the silicon substrate prevents the creation of a parasitic conductance within the top portion of the silicon substrate during operation of the SAW device.

Abstract translation: 在硅中具有低载流子寿命的接合晶片包括具有相对的顶表面和底表面的硅衬底，硅衬底的顶部中的硅的结构已经被修改以降低顶部相对于载流子寿命的载流子寿命 在除了顶部之外的硅衬底的部分中; 压电层，其结合在所述硅衬底的顶表面上并且具有相隔的距离T的顶表面和底表面; 以及具有以相同电极的相邻指状物之间的中心到中心距离D的图案相互数字间分散在压电层的顶表面上的指状物的一对电极，电极包括表面声学的一部分 波（SAW）装置。 硅衬底的顶部的修改防止在SAW器件的操作期间在硅衬底的顶部部分内产生寄生电导。

公开(公告)号：US20160191016A1

公开(公告)日：2016-06-30

申请号：US14757587

申请日：2015-12-23

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Jean-Frederic Chiron ,  Marcus Granger-Jones ,  Andrew F. Folkmann ,  Robert Aigner

IPC: H03H9/64 ,  H04B1/16 ,  H04B1/04

CPC classification number: H03H9/542 ,  H01Q1/50 ,  H03H9/568 ,  H03H9/605 ,  H03H9/64 ,  H03H9/6483 ,  H04B1/04 ,  H04B1/10 ,  H04B1/16

Abstract: RF circuitry, which includes a first acoustic RF resonator (ARFR), a first compensating ARFR, and a second compensating ARFR, is disclosed. The first compensating ARFR is coupled between a first inductive element and a first end of the first ARFR. The second compensating ARFR is coupled between a second inductive element and a second end of the first ARFR. The first inductive element and the second inductive element are negatively coupled to one another. The first compensating ARFR, the second compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.

Abstract translation: 公开了包括第一声RF谐振器（ARFR），第一补偿ARFR和第二补偿ARFR的RF电路。 第一补偿ARFR耦合在第一电感元件和第一ARFR的第一端之间。 第二补偿ARFR耦合在第一电感元件和第一ARFR的第二端之间。 第一电感元件和第二电感元件彼此负耦合。 第一补偿ARFR，第二补偿ARFR，第一电感元件和第二电感元件至少部分地补偿第一ARFR的并联电容。

公开(公告)号：US10090820B2

公开(公告)日：2018-10-02

申请号：US15078138

申请日：2016-03-23

Applicant: RF Micro Devices, Inc.

Inventor： Robert Aigner ,  Ebrahim Andideh

IPC: H03H9/25 ,  H03H3/04 ,  H03H3/08 ,  H03H9/02

Abstract: Stealth-dicing-compatible devices and methods to prevent acoustic backside reflections on acoustic wave devices are disclosed. An acoustic wave device comprises a substrate having opposing top and bottom surfaces, where a first portion of the bottom surface has a higher roughness than a second portion of the bottom surface, and an acoustic resonator over the top surface of the substrate. The acoustic resonator comprises a piezoelectric layer having opposing top and bottom surfaces and a plurality of electrodes, at least some of which are disposed on the top surface of the piezoelectric layer. The first portion of the bottom surface of the substrate is below and opposite from the acoustic resonator, and the second portion of the bottom surface of the substrate is not located below and opposite from the acoustic resonator. Multiple first portions, each separated from the other by second portions, may exist.

公开(公告)号：US20170033756A1

公开(公告)日：2017-02-02

申请号：US15087423

申请日：2016-03-31

Applicant: RF Micro Devices, Inc.

Inventor： Shogo Inoue ,  Marc Solal ,  Robert Aigner

IPC: H03H3/10 ,  H03H9/54 ,  H03H9/145 ,  H03H9/25 ,  H03H9/17 ,  H03H3/02 ,  H03H9/64

CPC classification number: H03H3/02 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/02952 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/54 ,  H03H9/6406 ,  Y10T29/42

Abstract: A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance T over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. The modifying and bonding steps may be performed in any order. The modified top portion of the silicon substrate prevents the creation of a parasitic conductance within that portion during operation of the SAW device.

Abstract translation: 在硅中制造具有低载流子寿命的接合晶片的方法包括提供具有相对的顶表面和底表面的硅衬底，修改硅衬底的顶部以相对于载流子寿命在顶部部分中降低载流子寿命 硅基板，除了顶部之外，将具有相对的顶表面和底表面的压电层在硅衬底的顶表面上分开一段距离T的压电层，并且提供一对电极，其具有数字上分散在顶表面上的指状物 的压电层，电极包括表面声波（SAW）装置的一部分。 修改和粘合步骤可以以任何顺序进行。 硅衬底的改进的顶部防止在SAW器件的操作期间在该部分内产生寄生电导。