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1.发明授权公开(公告)号：US09559629B2
公开(公告)日：2017-01-31
申请号：US14543220
申请日：2014-11-17
Applicant: Renesas Electronics Corporation
Inventor： Kenji Amada
IPC: H02M7/5387 , H02P27/06 , H01L27/092 , H02M1/32
CPC classification number: H02P27/06 , B60L3/00 , H01L27/092 , H01L2224/48137 , H01L2224/4903 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/1305 , H01L2924/13091 , H02M1/32 , H02M7/003 , H02M7/5387 , H03K17/6871 , H01L2924/00
Abstract: A semiconductor device includes a control section, a first arm, and a second arm; and has an H-bridge circuit to supply an input current supplied from a power source to an output terminal as a reversible electric current on the basis of a control signal outputted from the control section and a reverse-connection-time backflow prevention circuit to prevent an electric current in a direction opposite to the direction of the input current from being supplied to the H-bridge circuit. The first arm is formed over a first island. The second arm is formed over a second island. The control section and the reverse-connection-time backflow prevention circuit are formed over a third island.
Abstract translation: 半导体器件包括控制部分，第一臂和第二臂; 并且具有H桥电路，其基于从控制部分输出的控制信号和反向连接时间回流防止电路来将从电源提供的输入电流提供给输出端子作为可逆电流，以防止 与输入电流方向相反的方向的电流被提供给H桥电路。 第一臂形成在第一个岛上。 第二个臂形成在第二个岛上。 控制部和反连接时回退电路形成在第三岛上。
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2.发明申请公开(公告)号：US20160305989A1
公开(公告)日：2016-10-20
申请号：US15068929
申请日：2016-03-14
Applicant: Renesas Electronics Corporation
Inventor： Osamu SOMA , Akira Uemura , Kenji Amada
Abstract: A semiconductor device with the highly precise current detecting function is provided. Current detection is performed using a semiconductor device in which two semiconductor chips are mounted in one package. The first semiconductor chip is provided with an electric power supply transistor to supply power to a load via a load driving terminal, and a current detection circuit to detect a current flowing through the load driving terminal. In the inspection process of the semiconductor device, the electrical property of the current detection circuit in the first semiconductor chip is inspected, and the information on a correction equation obtained as the inspection result is written in a memory circuit of the second semiconductor chip. The second semiconductor chip corrects the detection result obtained by the current detection circuit based on the information on the correction equation written in the memory circuit concerned.
Abstract translation: 提供具有高精度电流检测功能的半导体器件。 使用其中两个半导体芯片安装在一个封装中的半导体器件进行电流检测。 第一半导体芯片设置有经由负载驱动端子向负载供电的电源晶体管，以及用于检测流过负载驱动端子的电流的电流检测电路。 在半导体器件的检查过程中，检查第一半导体芯片中的电流检测电路的电特性，并将作为检查结果获得的校正方程的信息写入第二半导体芯片的存储电路。 第二半导体芯片基于关于写入有关存储器电路的校正方程的信息来校正由电流检测电路获得的检测结果。
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Patent Agency Ranking
公开(公告)号：US09941832B2
公开(公告)日：2018-04-10
申请号：US15380148
申请日：2016-12-15
Applicant: Renesas Electronics Corporation
Inventor： Kenji Amada
IPC: H02M7/5387 , H02P27/06 , H01L27/092 , B60L3/00
CPC classification number: H02P27/06 , B60L3/00 , H01L27/092 , H01L2224/48137 , H01L2224/4903 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/1305 , H01L2924/13091 , H02M1/32 , H02M7/003 , H02M7/5387 , H03K17/6871 , H01L2924/00
Abstract: A semiconductor device includes an H-Bridge driver. The H-Bridge driver includes a first island on which a first power transistor and a second power transistor are mounted; a second island on which a third power transistor and a fourth power transistor are mounted; a third island on which a control circuit and a protection power transistor are mounted, the control circuit being configured to control the first, second, third and fourth power transistors, wherein the third island is allocated between the first island and the second island.
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公开(公告)号：US20180080963A1
公开(公告)日：2018-03-22
申请号：US15823217
申请日：2017-11-27
Applicant: Renesas Electronics Corporation
Inventor： Osamu SOMA , Akira Uemura , Kenji Amada
Abstract: A control method of a semiconductor device includes inspecting an electrical property of a current detection circuit in the first semiconductor chip, writing information on a correction equation obtained on the basis of an inspection result in a memory circuit of the second semiconductor chip, and correcting, with the second semiconductor chip, a detection result obtained by the current detection circuit on the basis of the information on the correction equation.
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公开(公告)号：US10222403B2
公开(公告)日：2019-03-05
申请号：US15823217
申请日：2017-11-27
Applicant: Renesas Electronics Corporation
Inventor： Osamu Soma , Akira Uemura , Kenji Amada
Abstract: A control method of a semiconductor device includes inspecting an electrical property of a current detection circuit in the first semiconductor chip, writing information on a correction equation obtained on the basis of an inspection result in a memory circuit of the second semiconductor chip, and correcting, with the second semiconductor chip, a detection result obtained by the current detection circuit on the basis of the information on the correction equation.
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公开(公告)号：US09835660B2
公开(公告)日：2017-12-05
申请号：US15068929
申请日：2016-03-14
Applicant: Renesas Electronics Corporation
Inventor： Osamu Soma , Akira Uemura , Kenji Amada
Abstract: A semiconductor device with the highly precise current detecting function is provided. Current detection is performed using a semiconductor device in which two semiconductor chips are mounted in one package. The first semiconductor chip is provided with an electric power supply transistor to supply power to a load via a load driving terminal, and a current detection circuit to detect a current flowing through the load driving terminal. In the inspection process of the semiconductor device, the electrical property of the current detection circuit in the first semiconductor chip is inspected, and the information on a correction equation obtained as the inspection result is written in a memory circuit of the second semiconductor chip. The second semiconductor chip corrects the detection result obtained by the current detection circuit based on the information on the correction equation written in the memory circuit concerned.
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公开(公告)号：US08917134B2
公开(公告)日：2014-12-23
申请号：US14057213
申请日：2013-10-18
Applicant: Renesas Electronics Corporation
Inventor： Kenji Amada
CPC classification number: H02P27/06 , B60L3/00 , H01L27/092 , H01L2224/48137 , H01L2224/4903 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/1305 , H01L2924/13091 , H02M1/32 , H02M7/003 , H02M7/5387 , H03K17/6871 , H01L2924/00
Abstract: A semiconductor device includes a control section, a first arm, and a second arm; and has an H-bridge circuit to supply an input current supplied from a power source to an output terminal as a reversible electric current on the basis of a control signal outputted from the control section and a reverse-connection-time backflow prevention circuit to prevent an electric current in a direction opposite to the direction of the input current from being supplied to the H-bridge circuit. The first arm is formed over a first island. The second arm is formed over a second island. The control section and the reverse-connection-time backflow prevention circuit are formed over a third island.
Abstract translation: 半导体器件包括控制部分，第一臂和第二臂; 并且具有H桥电路，其基于从控制部分输出的控制信号和反向连接时间回流防止电路来将从电源提供的输入电流提供给输出端子作为可逆电流，以防止 与输入电流方向相反的方向的电流被提供给H桥电路。 第一只手臂在第一个岛上形成。 第二个臂形成在第二个岛上。 控制部和反连接时回退电路形成在第三岛上。
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