公开(公告)号：US20230018305A1

公开(公告)日：2023-01-19

申请号：US17947320

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chaehoon KIM ,  Junyoung KO ,  Sangwan NAM ,  Minjae SEO ,  Jiwon SEO ,  Hojun LEE

IPC: G11C16/08 ,  G11C16/20 ,  G11C16/16 ,  G11C16/04 ,  G11C16/30 ,  G11C16/34 ,  G11C16/26

Abstract: A method of operating a nonvolatile memory device which includes at least one memory block is provided. The method includes providing a plurality of word-lines with a voltage during a word-line set-up period, precharging a plurality of driving lines with a voltage during a word-line development period, detecting a voltage drop of a sensing node during a sensing period, and detecting leakage based on the voltage drop.

公开(公告)号：US20220139457A1

公开(公告)日：2022-05-05

申请号：US17234175

申请日：2021-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chaehoon KIM ,  Junyoung KO ,  Sangwan NAM ,  Minjae SEO ,  Jiwon SEO ,  Hojun LEE

IPC: G11C16/08 ,  G11C16/20 ,  G11C16/16 ,  G11C16/26 ,  G11C16/30 ,  G11C16/34 ,  G11C16/04

Abstract: A method of operating a nonvolatile memory device which includes at least one memory block is provided. The method includes providing a plurality of word-lines with a voltage during a word-line set-up period, precharging a plurality of driving lines with a voltage during a word-line development period, detecting a voltage drop of a sensing node during a sensing period, and detecting leakage based on the voltage drop.

公开(公告)号：US20230143210A1

公开(公告)日：2023-05-11

申请号：US17750315

申请日：2022-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanggi HONG ,  Chaehoon KIM ,  Sangwon PARK ,  Jiho CHO

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/08 ,  G11C16/24

CPC classification number: G11C16/26 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/24

Abstract: In a method of operating a nonvolatile memory device that includes a memory block including cell strings where each of the cell strings includes a string selection transistor, memory cells and a ground selection transistor which are connected in series and disposed in a vertical direction, each of word-lines coupled to the memory cells is set up to a respective target level during a word-line set-up period, a sensing operation on target memory cells is performed by applying a read voltage to a selected word-line coupled to the target memory cells while applying a read pass voltage to unselected word-lines during a sensing period, and while consuming an internal voltage connected to the unselected word-lines in a particular circuit in the nonvolatile memory device, a voltage level of the unselected word-lines is recovered to a level of the internal voltage during a discharge period of a word-line recovery period.

公开(公告)号：US20230134907A1

公开(公告)日：2023-05-04

申请号：US17750642

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yohan LEE ,  Chaehoon KIM ,  Jungyun YUN ,  Jiho CHO ,  Sanggi HONG

IPC: G11C16/14 ,  G11C16/04 ,  G11C16/08 ,  G11C16/30

Abstract: A nonvolatile memory device includes a memory block and a control circuit. The memory block includes a plurality of cell strings where each of the plurality of cell strings includes a string selection transistor, a plurality of memory cells and a ground selection transistor which are connected in series and disposed in a vertical direction between a bit-line and a common source line. The control circuit adjusts a level of a high voltage applied to a gate of a pass transistor of a selected word-line such that a voltage difference between the high voltage and a program voltage applied to a drain of the pass transistor differs in at least a portion of a plurality of program loops based on a comparison of a number of the program loops and a reference number during a program operation on a target memory cells.