公开(公告)号：US11646203B2

公开(公告)日：2023-05-09

申请号：US16925532

申请日：2020-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyeong Lee ,  Minkyu Park ,  Insun Yi ,  Beomseok Kim ,  Youngseok Kim ,  Kuntack Lee

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/108 ,  H01L27/115 ,  H01J37/32 ,  C23C16/511 ,  C23C16/46 ,  C23C16/40

CPC classification number: H01L21/0262 ,  C23C16/401 ,  C23C16/46 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32192 ,  H01J37/32724 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/10888 ,  H01L27/115 ,  H01L29/6681 ,  H01J2237/332 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598

Abstract: A thin film formation apparatus includes a chamber, a platen disposed within the chamber, a heater configured to heat the platen within the chamber, a gas inlet communicating with an interior of the chamber and configured to supply a reducing gas and inert gas to the interior of the chamber, a target disposed within the chamber and spatially separated from the platen, and a microwave plasma source disposed adjacent to the target. The reducing gas includes at least one of hydrogen (H2) and deuterium (D2).