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公开(公告)号:US20230021867A1
公开(公告)日:2023-01-26
申请号:US17715417
申请日:2022-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor: Choongbin YIM , Jongbo SHIM , Jihwang KIM
IPC: H01L23/498 , H01L23/31 , H01L23/00
Abstract: A semiconductor package includes: a lower substrate including a lower wiring layer; a semiconductor chip disposed on the lower substrate and electrically connected to the lower wiring layer; an upper substrate disposed on the semiconductor chip and including a core layer, an upper wiring layer, a plurality of dummy structures, and a solder resist layer, wherein the core layer has through-holes, wherein the plurality of dummy structures are disposed in the through-holes and are electrically insulated from the upper wiring layer, and wherein the solder resist layer covers the upper wiring layer and extends in the through-holes; a connection structure disposed between the lower substrate and the upper substrate; an encapsulant disposed between the lower substrate and the upper substrate and encapsulating at least a portion of each of the semiconductor chip and the connection structure; and a connection bump disposed on the lower substrate.
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公开(公告)号:US20230063578A1
公开(公告)日:2023-03-02
申请号:US17712489
申请日:2022-04-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eunho CHO , Jihwang KIM , Sunchul KIM
IPC: H01L23/498 , H01L23/31
Abstract: A semiconductor package is provided. The semiconductor package includes: a lower substrate including a lower wiring layer; a semiconductor chip disposed on the lower substrate, and electrically connected to the lower wiring layer; an upper substrate disposed on the semiconductor chip, and including an upper wiring layer; a first connection structure disposed on the lower wiring layer, and having a first hollow open toward the upper substrate; a second connection structure disposed below the upper wiring layer, and having a second hollow open toward the lower substrate; a conductive connection member disposed between the first connection structure and the second connection structure, and filling at least a portion of the first hollow; and an encapsulant disposed between the lower substrate and the upper substrate, and encapsulating at least a portion of each of the semiconductor chip, the first connection structure and the second connection structure.
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公开(公告)号:US20220302035A1
公开(公告)日:2022-09-22
申请号:US17835768
申请日:2022-06-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Choongbin YIM , Jungwoo KIM , Jihwang KIM , Jongbo SHIM , Kyoungsei CHOI
IPC: H01L23/538 , H01L23/31 , H01L23/14
Abstract: A semiconductor package includes a first package substrate, a first semiconductor chip on the first package substrate, a molding layer covering side walls of the first semiconductor chip and including through holes, an interposer on the first semiconductor chip and the molding layer, conductive connectors in the through holes of the molding layer and connected to the first package substrate and the interposer, and an insulating filler including a first portion that fills the through holes of the molding layer so as to surround side walls of the conductive connectors.
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公开(公告)号:US20240030161A1
公开(公告)日:2024-01-25
申请号:US18480660
申请日:2023-10-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongho KIM , Jihwang KIM
IPC: H01L23/00 , H01L23/498 , H01L23/31
CPC classification number: H01L23/562 , H01L23/49822 , H01L23/49811 , H01L23/3128 , H01L24/32 , H01L23/49838 , H01L24/73 , H01L2224/32225 , H01L2224/73204
Abstract: A semiconductor package including a semiconductor chip, a lower redistribution layer under the semiconductor chip, the lower redistribution layer including a lower insulating layer at a central region and at a portion of an edge region, and a trench at a remaining portion of the edge region, a plurality of outer connecting terminals under the lower redistribution layer, a molding layer including a first molding section and the second molding section, the first molding section being on the lower redistribution layer and surrounding a side surface of the semiconductor chip and the second molding section being in the trench and contacting a side surface of the lower insulating layer, and an upper redistribution layer on the molding layer may be provided. The side surface of the lower insulating layer and a side surface of the second molding section may be coplanar with each other.
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公开(公告)号:US20230112061A1
公开(公告)日:2023-04-13
申请号:US17826505
申请日:2022-05-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eunho CHO , Jihwang KIM , Jongbo SHIM
IPC: H01L23/473 , H01L25/065 , H01L23/00
Abstract: A semiconductor package includes a first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip, a chip connection terminal configured to electrically connect the first semiconductor chip to the second semiconductor chip, an underfill layer disposed between the first semiconductor chip and the second semiconductor chip and surrounding the chip connection terminal, a vertical porous structure filling spaces of a plurality of vertical cooling channels passing through the first semiconductor chip, the second semiconductor chip, and the underfill layer in a vertical direction, and having a plurality of cooling holes, and a cooling fluid provided to the plurality of cooling holes of the vertical porous structure to flow inside the plurality of vertical cooling channels.
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公开(公告)号:US20250062241A1
公开(公告)日:2025-02-20
申请号:US18653116
申请日:2024-05-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyungdon MUN , Jihwang KIM , Sangjin BAEK , Kuwon LEE
IPC: H01L23/538 , H01L23/00 , H01L23/31 , H01L23/367 , H01L23/427 , H01L25/18 , H10B80/00
Abstract: A semiconductor package includes: a first substrate; a bridge chip disposed on the first substrate and having a first region and a second region; an upper semiconductor chip disposed on the first region of the bridge chip; and conductive posts disposed on the second region of the bridge chip and spaced apart from the upper semiconductor chip, wherein the upper semiconductor chip is electrically connected to the conductive posts through the bridge chip.
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公开(公告)号:US20220189835A1
公开(公告)日:2022-06-16
申请号:US17376883
申请日:2021-07-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Choongbin YIM , Dongwook KIM , Hyunki KIM , Jongbo SHIM , Jihwang KIM , Sungkyu PARK , Yongkwan LEE , Byoungwook JANG
IPC: H01L23/12 , H01L23/538
Abstract: A semiconductor package including a first package substrate, a first semiconductor chip on the first package substrate, a first conductive connector on the first package substrate and laterally spaced apart from the first semiconductor chip, an interposer substrate on the first semiconductor chip and electrically connected to the first package substrate through the first conductive connector, the interposer substrate including a first portion overlapping the first semiconductor chip and a plurality of upper conductive pads in the first portion, a plurality of spacers on a lower surface of the first portion of the interposer substrate and positioned so as not to overlap the plurality of upper conductive pads in a plan view, and an insulating filler between the interposer substrate and the first package substrate may be provided.
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公开(公告)号:US20240186231A1
公开(公告)日:2024-06-06
申请号:US18520453
申请日:2023-11-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihwang KIM , Joonsung KIM , Sangjin Baek , Kyounglim Suk
IPC: H01L23/498 , H01L23/00 , H01L23/31 , H01L23/522 , H01L25/065
CPC classification number: H01L23/49822 , H01L23/3128 , H01L23/49816 , H01L23/49838 , H01L23/5226 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0657 , H01L2224/08235 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2225/06544 , H01L2924/1431 , H01L2924/1436 , H01L2924/1437 , H01L2924/1438 , H01L2924/1441 , H01L2924/181
Abstract: A semiconductor package includes a lower redistribution structure. A semiconductor device is disposed on the lower redistribution structure. A lower encapsulant is disposed on the lower redistribution structure and surrounds a side surface of the semiconductor device. An upper composite redistribution structure is disposed on an upper portion of the semiconductor device and includes a primary conductive structure, a secondary conductive structure disposed on the primary conductive structure, connection vias disposed between the primary conductive structure and the secondary conductive structure, and an upper encapsulant disposed between the primary conductive structure and the secondary conductive structure and surrounding the connection vias.
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公开(公告)号:US20220344279A1
公开(公告)日:2022-10-27
申请号:US17510749
申请日:2021-10-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongho KIM , Jihwang KIM
IPC: H01L23/00 , H01L23/498 , H01L23/31
Abstract: A semiconductor package including a semiconductor chip, a lower redistribution layer under the semiconductor chip, the lower redistribution layer including a lower insulating layer at a central region and at a portion of an edge region, and a trench at a remaining portion of the edge region, a plurality of outer connecting terminals under the lower redistribution layer, a molding layer including a first molding section and the second molding section, the first molding section being on the lower redistribution layer and surrounding a side surface of the semiconductor chip and the second molding section being in the trench and contacting a side surface of the lower insulating layer, and an upper redistribution layer on the molding layer may be provided. The side surface of the lower insulating layer and a side surface of the second molding section may be coplanar with each other.
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公开(公告)号:US20220173081A1
公开(公告)日:2022-06-02
申请号:US17370149
申请日:2021-07-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taeseok CHOI , Jihwang KIM , Jongbo SHIM
IPC: H01L25/10 , H01L23/498 , H01L23/31 , H01L23/538
Abstract: A semiconductor package includes a lower substrate including a lower passivation layer, a lower pad, element pads and a supporting pad that are disposed on a lower surface of the lower substrate. The lower passivation layer partially covers the lower pad, the element pads and the supporting pad. A semiconductor chip is disposed on an upper surface of the lower substrate. An upper substrate is disposed on the semiconductor chip and is connected to the lower substrate. An encapsulator is disposed between the lower substrate and the upper substrate. An element is disposed on the lower surface of the lower substrate. The element is bonded to the element pads. A lower supporting member is disposed on the lower surface of the lower substrate. A supporting bonding member bonds the lower supporting member to the supporting pad.
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