公开(公告)号：US11037283B2

公开(公告)日：2021-06-15

申请号：US16444719

申请日：2019-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho Jang ,  Yasuhiro Hidaka ,  Young-kyu Park ,  Ye-eun Park ,  Yu-Sin Yang

IPC: G06T7/00 ,  G02B27/09 ,  G02B5/30 ,  H04N13/239 ,  G02B26/12

Abstract: Provided is a hyperspectral imaging (HSI)-based inspection apparatus capable of quickly and stably performing two-dimensional (2D) HSI for an inspection object, and accordingly, capable of quickly and accurately inspecting the inspection object. The HSI-based inspection apparatus includes: a stage on which an inspection object is arranged; an optical system configured to allow light to be incident on the inspection object and emit the light reflected from the inspection object; a scan mirror configured to reflect the emitted light from the optical system while rotating; and a hyperspectral camera configured to obtain an image having a wavelength direction and a line direction as two axes for light reflected from the scan mirror, wherein, by using the rotation of the scan mirror, the hyperspectral camera is configured to perform the 2D HSI for the inspection object.

公开(公告)号：US10332831B2

公开(公告)日：2019-06-25

申请号：US15638552

申请日：2017-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Augustin Jinwoo Hong ,  Dae-Ik Kim ,  Chan-Sic Yoon ,  Ki-Seok Lee ,  Dong-Min Han ,  Sung-Ho Jang ,  Yoo-Sang Hwang ,  Bong-Soo Kim ,  Je-Min Park

IPC: H01L27/108 ,  H01L23/522 ,  H01L27/11568 ,  H01L21/768

Abstract: A semiconductor device includes a substrate including a cell array region including a cell active region. An insulating pattern is on the substrate. The insulating pattern includes a direct contact hole which exposes the cell active region and extends into the cell active region. A direct contact conductive pattern is in the direct contact hole and is connected to the cell active region. A bit line is on the insulating pattern. The bit line is connected to the direct contact conductive pattern and extends in a direction orthogonal to an upper surface of the insulating pattern. The insulating pattern includes a first insulating pattern including a non-metal-based dielectric material and a second insulating pattern on the first insulating pattern. The second insulating pattern includes a metal-based dielectric material having a higher dielectric constant than a dielectric constant of the first insulating pattern.

公开(公告)号：US20180144995A1

公开(公告)日：2018-05-24

申请号：US15702870

申请日：2017-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Duk Kim ,  Byeong-Hwan Jeon ,  Kyung-Sik Kang ,  Kang-Woong Ko ,  Soo-Ryong Kim ,  Tae-Joong Kim ,  Jun-Bum Park ,  Gil-Woo Song ,  Sung-Ho Jang ,  Hyoung-Jo Jeon ,  Jae-Chol Joo

IPC: H01L21/66 ,  H01L21/78 ,  G01B11/06 ,  G01B11/02 ,  G01N21/88 ,  G01N21/95

CPC classification number: H01L22/12 ,  G01B11/022 ,  G01B11/06 ,  G01B11/0633 ,  G01B2210/56 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/8845 ,  G01N2021/8848 ,  H01L21/78

Abstract: An optical inspection apparatus includes a broadband light source, a monochromator, an image obtaining apparatus, and an analysis device. The monochromator is configured to convert light from the broadband light source into a plurality of monochromatic beams of different wavelengths and sequentially output the monochromatic beams, where each beam has a preset wavelength width and corresponds to one of a plurality of different wavelength regions. The image obtaining apparatus is configured to allow each monochromatic beam output from the monochromator to be incident to a top surface of an inspection target without using a beam splitter, allow light reflected by the inspection target to travel in a form of light of an infinite light source, and generate 2D images of the inspection target. The analysis device is configured to analyze the 2D images of the inspection target in the plurality of wavelength regions.

公开(公告)号：US09768051B2

公开(公告)日：2017-09-19

申请号：US15071228

申请日：2016-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xinglong Chen ,  Dali Liu ,  Sung-Ho Jang ,  Yong-Ho Lim

IPC: H01L21/687

CPC classification number: H01L21/68728

Abstract: A wafer clamping apparatus, including a plurality of support pins under a wafer, the plurality of pins to support the wafer; and a side clamp at a lateral side of the wafer, the side clamp to directly contact a lateral side of the wafer to press the wafer, the side clamp to press the wafer in a first direction or a second direction, the first direction and the second direction being different directions.

公开(公告)号：US09082647B2

公开(公告)日：2015-07-14

申请号：US14465982

申请日：2014-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho Jang ,  Dong-Jin Lee ,  Bong-Soo Kim ,  Jun-Hee Lim ,  Joon Han

IPC: H01L27/108 ,  H01L27/12 ,  H01L27/13

CPC classification number: H01L27/108 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10844 ,  H01L27/10855 ,  H01L27/10864 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10894 ,  H01L27/12 ,  H01L27/13 ,  H01L29/785

Abstract: There is provided a semiconductor device. The semiconductor device may include multiple contacts plugs, an insulation layer pattern, a metal oxide layer pattern, a metal pattern and a metal line. The contact plugs contact a substrate. The insulation layer pattern is formed between the contact plugs and has a top surface lower than those of the contact plugs. The metal oxide layer pattern is formed on the insulation layer pattern, and has a dielectric constant higher than that of silicon oxide. The metal pattern is formed on the metal oxide layer pattern and contacts sidewalls of the contact plugs. The metal line contacts top surfaces of the contact plugs and the metal pattern and extends thereon.

Abstract translation: 提供了一种半导体器件。 半导体器件可以包括多个触点插头，绝缘层图案，金属氧化物层图案，金属图案和金属线。 接触插头接触基板。 绝缘层图案形成在接触插塞之间，并且具有比接触插塞低的顶表面。 金属氧化物层图案形成在绝缘层图案上，并且具有比氧化硅更高的介电常数。 金属图案形成在金属氧化物层图案上并接触接触插塞的侧壁。 金属线接触接触插塞的顶表面和金属图案并在其上延伸。