公开(公告)号：US20230253527A1

公开(公告)日：2023-08-10

申请号：US18103629

申请日：2023-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongseok CHOI ,  Suyeol LEE ,  Jeongwook LEE ,  Youngjin CHOI

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/06 ,  H01L33/24

CPC classification number: H01L33/382 ,  H01L33/32 ,  H01L33/06 ,  H01L33/24

Abstract: A semiconductor light-emitting device includes a first conductivity-type semiconductor layer having, in an upper portion thereof, a plurality of rods spaced apart from each other, a plurality of active layers respectively formed on upper surfaces of the plurality of rods, a plurality of second conductivity-type semiconductor layers respectively formed on upper surfaces of the plurality of active layers, an insulating spacer conformally formed between the plurality of rods, surrounding all sidewalls of each of the plurality of active layers, and covering portions of sidewalls of each of the plurality of second conductivity-type semiconductor layers, a first electrode layer in contact with a lower portion of the first conductivity-type semiconductor layer, and a second electrode layer filling an inner space of the insulating spacer and in contact with the plurality of second conductivity-type semiconductor layers.

公开(公告)号：US20240266474A1

公开(公告)日：2024-08-08

申请号：US18430747

申请日：2024-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun KIM ,  Gyeongseon PARK ,  Hanul YOO ,  Suyeol LEE ,  Taesung JANG ,  Dooho JEONG

IPC: H01L33/40 ,  H01L33/32

CPC classification number: H01L33/405 ,  H01L33/32

Abstract: A semiconductor light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer arranged on the first conductivity type semiconductor layer, an active layer, an electrode layer formed on a top surface of the second conductivity type semiconductor layer, a reflective layer formed on a part of a top surface of the electrode layer, a bonding pad formed on a top surface of the reflective layer, an insulating layer formed on another part of the top surface of the electrode layer, and an insulating spacer conformally formed along a surface of the substrate. The reflective layer includes a material that is not etched by an aqueous solution including one of tetramethyl ammonium hydroxide (TMAH), KOH, NaOH, and NH4OH and the bonding pad has a shell shape including a part of which the width gradually decreases as the part distances from the reflective layer.

公开(公告)号：US20210057602A1

公开(公告)日：2021-02-25

申请号：US16844616

申请日：2020-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghwan JANG ,  Jae-Yoon KIM ,  Sungwon KO ,  Junghee KWAK ,  Sangseok LEE ,  Suyeol LEE ,  Seungwan CHAE ,  Pun Jae CHOI

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/24 ,  H01L33/40

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.