SUBSTRATE PROCESSING APPARATUS
    1.
    发明公开

    公开(公告)号:US20230311153A1

    公开(公告)日:2023-10-05

    申请号:US18101121

    申请日:2023-01-25

    CPC classification number: B05C5/001 B05C11/08 B05D1/005

    Abstract: A substrate processing apparatus, which may suppress occurrence of temperature deviation caused by an air current, is provided. The substrate processing apparatus includes a chamber including an upper body and a lower body and having a processing space formed therein by the upper body and the lower body, a substrate support unit disposed in the processing space and having a support surface on which the substrate is supported, a heater disposed to heat gas in the processing space, an introduction unit configured to supply gas toward an edge of the support surface, and a discharge unit configured to discharge the gas in the processing space. The discharge unit may include a plurality of outlets spaced apart from a centerline of the support surface in the upper body and disposed to be closer to the centerline of the support surface than to the introduction unit.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20230311172A1

    公开(公告)日:2023-10-05

    申请号:US18094344

    申请日:2023-01-06

    CPC classification number: B08B3/123 B08B3/08

    Abstract: A substrate processing apparatus includes a substrate support unit, supporting a substrate, and an ultrasonic cleaning module disposed in a location lower than an upper surface of the substrate support unit. The ultrasonic cleaning module may include a receiving portion receiving a chemical, an opening portion in which at least a portion of an upper surface of the receiving portion is opened, and an ultrasonic vibration unit disposed to be directed toward the opening portion from the receiving portion, and may be configured in such a manner that a liquid surface of the chemical, rising by the ultrasonic vibration unit, touches the substrate through the opening portion.

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