SUBSTRATE PROCESSING METHOD, MANUFACTURING METHOD, AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20250062125A1

    公开(公告)日:2025-02-20

    申请号:US18792771

    申请日:2024-08-02

    Abstract: Disclosed is a substrate processing method including: a substrate loading operation of loading a substrate into a processing space provided by a body; a heating operation of placing the substrate, which has been loaded into the processing space, on a heating chuck and heating the substrate; and an atmosphere changing operation of changing an atmosphere of the processing space, in which the atmosphere changing operation includes: a gas discharging operation of injecting atmosphere changing gas in a state where the substrate is located closer to a baffle than in the heating operation, in which the baffle is provided on a top side of the heating chuck to face the heating chuck and injects the atmosphere changing gas; and a substrate lowering operation of lowering and placing the substrate onto the heating chuck while maintaining the injection of the atmosphere changing gas.

    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20250096007A1

    公开(公告)日:2025-03-20

    申请号:US18882906

    申请日:2024-09-12

    Abstract: A method of treating a substrate treats a substrate by using a substrate treating apparatus that includes a main supply line connected to a humidified gas supply line and a dry gas supply line, having a first region in which a first heater is installed, and a second region located downstream of the first region. The method includes a heating operation of heating the second region with the dry gas heated in the first region by supplying the dry gas into the main supply line in a state where the first heater is controlled to heat the first region; and a substrate treating operation of supplying the humidified gas into the main supply line after the heating operation and allowing the humidified gas to pass through the first region and the second region and to be supplied into the treatment space to treat the substrate disposed in the treatment space.

    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20240385524A1

    公开(公告)日:2024-11-21

    申请号:US18664981

    申请日:2024-05-15

    Abstract: Disclosed are an apparatus and a method for treating a substrate, and more particularly, an apparatus and a method for heat treating a substrate. The apparatus includes: a heating unit provided in the inner space, and providing a treatment space in which a heating process of the substrate is performed; a transfer plate positioned within the inner space, and movable between an inner position for loading the substrate into the treatment space or for unloading the substrate from the treatment space and an outer position provided outside the heating unit; and a gas injection unit positioned within the inner space, and for injecting atmosphere gas toward the substrate at the outer position.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20230311172A1

    公开(公告)日:2023-10-05

    申请号:US18094344

    申请日:2023-01-06

    CPC classification number: B08B3/123 B08B3/08

    Abstract: A substrate processing apparatus includes a substrate support unit, supporting a substrate, and an ultrasonic cleaning module disposed in a location lower than an upper surface of the substrate support unit. The ultrasonic cleaning module may include a receiving portion receiving a chemical, an opening portion in which at least a portion of an upper surface of the receiving portion is opened, and an ultrasonic vibration unit disposed to be directed toward the opening portion from the receiving portion, and may be configured in such a manner that a liquid surface of the chemical, rising by the ultrasonic vibration unit, touches the substrate through the opening portion.

    SUBSTRATE TREATMENT APPARATUS AND METHOD

    公开(公告)号:US20230071392A1

    公开(公告)日:2023-03-09

    申请号:US17738010

    申请日:2022-05-06

    Abstract: Provided is a substrate treatment apparatus with improved workability. The substrate treatment apparatus includes: a first bath storing a cleaning solution and having a first opening formed in an upper surface thereof; and a first ultrasonic oscillator installed in the first bath and providing ultrasonic waves toward a surface of the cleaning solution exposed by the first opening to form a water film protruding from the surface of the cleaning solution, wherein a substrate is not immersed in the first bath, and a surface of the substrate is placed adjacent to the first opening and cleaned by the water film.

    SUBSTRATE PROCESSING APPARATUS
    9.
    发明公开

    公开(公告)号:US20230311153A1

    公开(公告)日:2023-10-05

    申请号:US18101121

    申请日:2023-01-25

    CPC classification number: B05C5/001 B05C11/08 B05D1/005

    Abstract: A substrate processing apparatus, which may suppress occurrence of temperature deviation caused by an air current, is provided. The substrate processing apparatus includes a chamber including an upper body and a lower body and having a processing space formed therein by the upper body and the lower body, a substrate support unit disposed in the processing space and having a support surface on which the substrate is supported, a heater disposed to heat gas in the processing space, an introduction unit configured to supply gas toward an edge of the support surface, and a discharge unit configured to discharge the gas in the processing space. The discharge unit may include a plurality of outlets spaced apart from a centerline of the support surface in the upper body and disposed to be closer to the centerline of the support surface than to the introduction unit.

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