公开(公告)号：US12278088B2

公开(公告)日：2025-04-15

申请号：US17092757

申请日：2020-11-09

Applicant: SEMES CO., LTD.

Inventor： Il Gyo Koo ,  Harutyun Melikyan ,  Hyo Seong Seong ,  Soojin Lee

IPC: H01L21/3065 ,  H01J37/32

Abstract: Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna.

公开(公告)号：US20240420936A1

公开(公告)日：2024-12-19

申请号：US18818710

申请日：2024-08-29

Applicant: SEMES Co., Ltd.

Inventor： Hyo Seong Seong ,  Tae Hoon Jo ,  Jeong Yeon Hwang ,  Jae Hong Min

IPC: H01J37/32

Abstract: Provided are an impedance control apparatus for automatically compensating impedance by predicting the occurrence of wear on a ring assembly, and a substrate treating system having the same. The substrate treating system includes a housing for providing a space for treating a substrate, a substrate support member installed inside the housing and for supporting the substrate, a plasma generating unit for generating plasma inside the housing, a ring assembly disposed in circumference of the substrate, and an impedance control unit for controlling the impedance around the ring assembly and automatically compensating the impedance by predicting the occurrence of wear of the ring assembly.

公开(公告)号：US12125678B2

公开(公告)日：2024-10-22

申请号：US16880221

申请日：2020-05-21

Applicant: SEMES CO., LTD.

Inventor： Ogsen Galstyan ,  Hyo Seong Seong ,  Byeung Geon Jeon ,  Jong Hwan An

IPC: H01J3/32 ,  H01J37/32 ,  H01L21/683 ,  H03H7/01 ,  H01L21/67

CPC classification number: H01J37/32174 ,  H01J37/32724 ,  H01L21/6833 ,  H03H7/0115 ,  H03H7/0153 ,  H01J2237/334 ,  H01L21/67069

Abstract: A substrate treating apparatus is disclosed. The substrate treating apparatus may include a chamber having a treating space defined therein, a support unit for supporting the substrate in the treating space, a heater power source for applying electric power to a heater in the support unit, a high-frequency power source for applying high-frequency power to a lower electrode in the support unit, and a filter unit installed at a line for connecting the heater power source with the heater to prevent high-frequency inflow. The filter unit may include a housing, one or more coils in the housing, and an adjustment member disposed between the housing and the coil. The adjustment member may be made of a non-magnetic material. The adjustment member may be spaced from the coil at a predefined spacing, and spaced apart from an inner wall of the housing or in contact with the housing inner wall.

公开(公告)号：US10563919B2

公开(公告)日：2020-02-18

申请号：US15463319

申请日：2017-03-20

Applicant: SEMES CO., LTD.

Inventor： Jung Min Won ,  Ik-Jin Choi ,  Hyo Seong Seong ,  Shin-Woo Nam

IPC: F27D7/06

Abstract: An embodiment includes an apparatus for controlling temperature of a substrate, an apparatus for treating a substrate comprising the same, and a method of controlling the same, which may control the temperature of the substrate by each area and not increasing the volume of the apparatus. The substrate temperature control apparatus comprises: a support plate for supporting a substrate; a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area; a power supply unit for providing a power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device; and a controller for controlling a power which is supplied to each heating units by controlling unit.

公开(公告)号：US12276684B2

公开(公告)日：2025-04-15

申请号：US17992972

申请日：2022-11-23

Applicant: SEMES CO., LTD.

Inventor： Tae Hoon Jo ,  Hyo Seong Seong ,  Ji Hyun Kim ,  Ja Myung Gu

IPC: G01R27/16

Abstract: Proposed are a method and an apparatus for determining a cable length for plasma processing equipment. More particularly, proposed is a method of determining a length of a power supply cable for plasma processing equipment that performs plasma processing through power supply at radio frequencies (RF) of several tens of MHz or more.

公开(公告)号：US20220139683A1

公开(公告)日：2022-05-05

申请号：US17509200

申请日：2021-10-25

Applicant: SEMES Co., Ltd.

Inventor： Hyo Seong Seong ,  Tae Hoon Jo ,  Jeong Yeon Hwang ,  Jae Hong Min

IPC: H01J37/32

Abstract: Provided are an impedance control apparatus for automatically compensating impedance by predicting the occurrence of wear on a ring assembly, and a substrate treating system having the same. The substrate treating system includes a housing for providing a space for treating a substrate, a substrate support member installed inside the housing and for supporting the substrate, a plasma generating unit for generating plasma inside the housing, a ring assembly disposed in circumference of the substrate, and an impedance control unit for controlling the impedance around the ring assembly and automatically compensating the impedance by predicting the occurrence of wear of the ring assembly.

公开(公告)号：US20170358427A1

公开(公告)日：2017-12-14

申请号：US15689519

申请日：2017-08-29

Applicant: SEMES CO., LTD.

Inventor： Il Gyo KOO ,  Harutyun Melikyan ,  Hyo Seong Seong ,  Soojin Lee

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/3211

Abstract: Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna.