LCD panel and method for forming the same
    1.
    发明授权
    LCD panel and method for forming the same 有权
    LCD面板及其形成方法

    公开(公告)号:US09348186B2

    公开(公告)日:2016-05-24

    申请号:US14853305

    申请日:2015-09-14

    Abstract: The present invention discloses a liquid crystal display (LCD) panel and method for forming the same. In the LCD panel, the TFT includes a source and a drain formed by a transparent conducting layer, and a gate formed by a metal layer. The source is electrically connected with a data line through a via hole over the data line. The source connects to the drain via an active layer. Whatever the number of data lines are, each pixel corresponds to an associated via hole, so the number of via holes does not increase, and not reduce the aperture ratio. Therefore, the present invention is very proper to a design using more data lines and working in a high frequency. Moreover, the matrix circuitry of LCD of the present invention is well applied in a display which not only increases a density of data lines to raise the frame rate, but also maintains the aperture ratio and brightness.

    Abstract translation: 本发明公开了一种液晶显示器(LCD)面板及其形成方法。 在LCD面板中,TFT包括由透明导电层形成的源极和漏极以及由金属层形成的栅极。 源极通过数据线上的通孔与数据线电连接。 源极通过有源层连接到漏极。 无论数据线的数量如何,每个像素对应于相关的通孔,因此通孔的数量不增加,并且不会降低开口率。 因此,本发明对于使用更多数据线并以高频工作的设计非常合适。 此外,本发明的LCD的矩阵电路被很好地应用于不仅提高数据线的密度以提高帧速率而且还保持开口率和亮度的显示器。

    Thin film transistor manufacturing method
    2.
    发明授权
    Thin film transistor manufacturing method 有权
    薄膜晶体管制造方法

    公开(公告)号:US08829523B2

    公开(公告)日:2014-09-09

    申请号:US14071284

    申请日:2013-11-04

    CPC classification number: H01L29/66765 H01L29/78618

    Abstract: The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT, so as to save the process cost. Further, the source electrode and drain electrode of the TFT are also manufactured with poly-silicon rather than metal material used in prior art, processing steps are simplified, thereby further saving the process cost.

    Abstract translation: 本发明提供薄膜晶体管(TFT)制造方法和TFT,TFT的源电极或漏电极在成形过程中直接与数据线电连接,在数据线上方的表面上设置通孔 的TFT,以节省工艺成本。 此外,TFT的源电极和漏电极也用多晶硅而不是现有技术中使用的金属材料制造,简化了处理步骤,从而进一步节省了工艺成本。

    Thin Film Transistor Manufacturing Method
    5.
    发明申请
    Thin Film Transistor Manufacturing Method 有权
    薄膜晶体管制造方法

    公开(公告)号:US20140057400A1

    公开(公告)日:2014-02-27

    申请号:US14071284

    申请日:2013-11-04

    CPC classification number: H01L29/66765 H01L29/78618

    Abstract: The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT, so as to save the process cost. Further, the source electrode and drain electrode of the TFT are also manufactured with poly-silicon rather than metal material used in prior art, processing steps are simplified, thereby further saving the process cost.

    Abstract translation: 本发明提供薄膜晶体管(TFT)制造方法和TFT,TFT的源电极或漏电极在成形过程中直接与数据线电连接,在数据线上方的表面上设置通孔 的TFT,以节省工艺成本。 此外,TFT的源电极和漏电极也用多晶硅而不是现有技术中使用的金属材料制造,简化了处理步骤,从而进一步节省了工艺成本。

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