公开(公告)号：US20200181797A1

公开(公告)日：2020-06-11

申请号：US16702905

申请日：2019-12-04

Applicant: SHOWA DENKO K.K.

Inventor： Rimpei KINDAICHI ,  Yoshishige OKUNO ,  Tomohiro SHONAI

IPC: C30B23/06 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A crystal growing apparatus includes: a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside during heating to a higher or lower temperature than that of the other regions; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other.

公开(公告)号：US20220205137A1

公开(公告)日：2022-06-30

申请号：US17562438

申请日：2021-12-27

Applicant: SHOWA DENKO K.K.

Inventor： Rimpei KINDAICHI

IPC: C30B35/00 ,  C30B23/02 ,  C30B29/36 ,  C30B23/06 ,  H01L21/205

Abstract: A silicon carbide single crystal manufacturing apparatus includes a crucible constituted by a crucible body and a crucible lid and a base having a crucible lid side surface supported by the lower surface of the crucible lid, and a seed crystal mounting surface on which the seed crystal is mounted and which is a surface on the opposite side of the crucible lid side surface, wherein the base is made of graphite material, the area of the seed crystal mounting surface is larger than the area of the crucible lid side surface, and the base has at least of a portion in which the cross-sectional area orthogonal to the vertical direction connecting the crucible lid side surface and the seed crystal mounting surface is gradually reduced, and a portion that is getting smaller gradually, from the surface of the seed crystal mounting surface toward the crucible lid side surface.

公开(公告)号：US20190330761A1

公开(公告)日：2019-10-31

申请号：US16388968

申请日：2019-04-19

Applicant: SHOWA DENKO K.K.

Inventor： Rimpei KINDAICHI ,  Yoshishige OKUNO ,  Tomohiro SHONAI

IPC: C30B23/02

Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.

公开(公告)号：US20220213617A1

公开(公告)日：2022-07-07

申请号：US17646062

申请日：2021-12-27

Applicant: SHOWA DENKO K.K

Inventor： Nobutoshi SUDOH ,  Rimpei KINDAICHI

IPC: C30B29/36 ,  C30B35/00 ,  C30B23/02

Abstract: A silicon carbide single crystal manufacturing apparatus includes a crucible constituted by a crucible body and a crucible lid; and a base that is placed on the underside of the crucible lid and holds a silicon carbide seed crystal, wherein the base has a structure in which a plurality of graphite plates having anisotropy of the thermal expansion coefficient are laminated and bonded, and when viewed in a plan view from the lamination direction, in the plurality of graphite plates, the maximum directional axes of the thermal expansion coefficient between adjacent graphite plates are orthogonal to each other or the maximum directional axes intersect within an angle range of ±15° from orthogonal.

公开(公告)号：US20200181796A1

公开(公告)日：2020-06-11

申请号：US16702749

申请日：2019-12-04

Applicant: SHOWA DENKO K.K.

Inventor： Rimpei KINDAICHI ,  Yoshishige OKUNO ,  Tomohiro SHONAI

IPC: C30B23/06 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A crystal growing apparatus includes: a crucible including a main body portion and a low radiation portion having a radiation rate lower than that of the main body portion; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the low radiation portion is provided on an outer surface of a first point which is a heating center, in a case where the crucible does not include the low radiation portion.

公开(公告)号：US20190194822A1

公开(公告)日：2019-06-27

申请号：US16223185

申请日：2018-12-18

Applicant: SHOWA DENKO K.K.

Inventor： Rimpei KINDAICHI ,  Yohei Fujikawa ,  Yoshishige Okuno

IPC: C30B29/36 ,  C30B29/60 ,  C30B23/00 ,  C30B23/02

CPC classification number: C30B29/36 ,  C30B23/002 ,  C30B23/02 ,  C30B29/605 ,  H01L21/02378 ,  H01L21/02433

Abstract: A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.