公开(公告)号：US10731247B2

公开(公告)日：2020-08-04

申请号：US15683399

申请日：2017-08-22

Applicant: SILCOTEK CORP.

Inventor： David A. Smith ,  James B. Mattzela ,  Paul H. Silvis ,  Gary A. Barone

IPC: C23C16/32 ,  C23C16/56 ,  C23C8/10 ,  B05D1/00

Abstract: The present invention relates to a coated article. The coated article includes a first layer, a second layer, and a diffusion region between the first layer and the second layer. The first layer has a first atomic concentration of C, a first atomic concentration of Si, and a first atomic concentration of O. The second layer has a first atomic concentration of Fe, a first atomic concentration of Cr, and a first atomic concentration of Ni. The diffusion region has a second atomic concentration of the C, a second atomic concentration of the Si, a second atomic concentration of the O, a second atomic concentration of the Fe, a second atomic concentration of the Cr, and a second atomic concentration of the Ni. All of the atomic concentrations are based upon Auger Electron Spectroscopy.

公开(公告)号：US10087521B2

公开(公告)日：2018-10-02

申请号：US14970015

申请日：2015-12-15

Applicant: SILCOTEK CORP.

Inventor： Min Yuan ,  James B. Mattzela ,  David A. Smith

IPC: C23C16/00 ,  C23C16/34 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04

Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

公开(公告)号：US11807777B2

公开(公告)日：2023-11-07

申请号：US16801230

申请日：2020-02-26

Applicant: SILCOTEK CORP.

Inventor： David A. Smith ,  James B. Mattzela ,  Paul H. Silvis ,  Gary A. Barone ,  Martin E. Higgins

IPC: B32B7/02 ,  C09D5/00 ,  C23C16/30 ,  C23C16/56 ,  C23C16/40 ,  C23C30/00 ,  C23C16/02 ,  C23C16/18

CPC classification number: C09D5/00 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  C23C30/00 ,  Y10T428/265 ,  Y10T428/31612 ,  Y10T428/31663

Abstract: Amorphous coatings and coated articles having amorphous coatings are disclosed. The amorphous coating comprises a first layer and a second layer, the first layer being proximal to a metal substrate compared to the second layer, the second layer being distal from the metal substrate compared to the first layer. The first layer and the second layer comprise carbon, hydrogen, and silicon. The first layer further comprises oxygen.

公开(公告)号：US10323321B1

公开(公告)日：2019-06-18

申请号：US14990889

申请日：2016-01-08

Applicant: SILCOTEK CORP.

Inventor： Min Yuan ,  Paul H. Silvis ,  James B. Mattzela

IPC: C23C16/24 ,  C23C16/44

Abstract: Thermal chemical vapor deposition processes and coated articles are disclosed. The coated article includes a surface having a surface impurity and a coating on the surface formed by thermally reacting a gas. In comparison to a comparable coating without the surface impurity, the coating on the surface has substantially the same level of adhesion, corrosion resistance over 24 hours in 6M HCl, corrosion resistance over 72 hours in NaClO, and electrochemical impedance spectroscopy results. Additionally or alternatively, the surface impurity has properties that reduce or eliminate adhesion of a comparative coating produced by decomposition of silane on a comparative surface following exposure of the surface to a temperature.

公开(公告)号：US10316408B2

公开(公告)日：2019-06-11

申请号：US14946115

申请日：2015-11-19

Applicant: SILCOTEK CORP. ,  AIXTRON SE

Inventor： David A. Smith ,  Min Yuan ,  James B. Mattzela ,  Olaf Martin Wurzinger ,  Dietmar Keiper ,  Anna Katharina Haab

IPC: C23C16/24 ,  C23C16/44

Abstract: A delivery device, manufacturing system, and process of manufacturing are disclosed. The delivery device includes a feed tube and a chemical vapor deposition coating applied over an inner surface of the feed tube, the chemical vapor deposition coating being formed from decomposition of dimethylsilane. The manufacturing system includes the delivery device and a chamber in selective fluid communication with the delivery device. The process of manufacturing uses the manufacturing system to produce an article.

公开(公告)号：US09340880B2

公开(公告)日：2016-05-17

申请号：US14464748

申请日：2014-08-21

Applicant: SILCOTEK CORP.

Inventor： James B. Mattzela

IPC: H01L21/02 ,  C23C16/56 ,  B05D1/00 ,  C23C16/22 ,  C09D7/00

CPC classification number: C23C16/56 ,  B05D1/60 ,  C09D7/00 ,  C23C16/22

Abstract: Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.

Abstract translation: 描述半导体制造工艺。 半导体制造工艺的一个实施例包括通过化学气相沉积提供由二甲基硅烷分解形成的层，该层由流体材料施加，然后将该层定位在用于制造半导体产品的系统中。 另外或替代地，制造半导体产品和/或该层在基底上。

公开(公告)号：US11292924B2

公开(公告)日：2022-04-05

申请号：US14680669

申请日：2015-04-07

Applicant: SILCOTEK CORP.

Inventor： David A. Smith ,  Min Yuan ,  James B. Mattzela ,  Paul H. Silvis

IPC: C09D5/16 ,  C23C16/44 ,  C23C16/56 ,  C23C16/02 ,  C23C16/30

Abstract: A coated article is disclosed. The article includes a coating formed by thermal decomposition, oxidation then functionalization. The article is configured for a marine environment, the marine environment including fouling features. The coating is resistant to the fouling features. Additionally or alternatively, the article is a medical device configured for a protein-containing environment, the protein-containing environment including protein adsorption features. The coating is resistant to the protein adsorption features.

公开(公告)号：US11261524B2

公开(公告)日：2022-03-01

申请号：US16379236

申请日：2019-04-09

Applicant: SILCOTEK CORP.

Inventor： Thomas F. Vezza ,  James B. Mattzela ,  Gary A. Barone ,  Jesse Bischof ,  David A. Smith

IPC: C23C16/44 ,  B32B15/00 ,  H01L21/02

Abstract: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.

公开(公告)号：US10851455B2

公开(公告)日：2020-12-01

申请号：US16121994

申请日：2018-09-05

Applicant: SILCOTEK CORP.

Inventor： Min Yuan ,  James B. Mattzela ,  David A. Smith

IPC: C23C16/00 ,  C23C16/34 ,  C23C16/04 ,  C23C16/455 ,  C23C16/30 ,  C23C16/56

Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

公开(公告)号：US09915001B2

公开(公告)日：2018-03-13

申请号：US14821949

申请日：2015-08-10

Applicant: SILCOTEK CORP.

Inventor： Min Yuan ,  David A. Smith ,  Paul H. Silvis ,  James B. Mattzela

IPC: C23C16/30 ,  C23C16/46 ,  C23C16/56 ,  C23C16/52 ,  C23C16/22

CPC classification number: C23C16/52 ,  C23C16/22 ,  C23C16/30 ,  C23C16/46 ,  C23C16/56

Abstract: A chemical vapor deposition process and coated article are disclosed. The chemical vapor deposition process includes positioning an article in a chemical vapor deposition chamber, then introducing a deposition gas to the chemical vapor deposition chamber at a sub-decomposition temperature that is below the thermal decomposition temperature of the deposition gas, and then heating the chamber to a super-decomposition temperature that is equal to or above the thermal decomposition temperature of the deposition gas resulting in a deposited coating on at least a surface of the article from the introducing of the deposition gas. The chemical vapor deposition process remains within a pressure range of 0.01 psia and 200 psia and/or the deposition gas is dimethylsilane. The coated article includes a substrate subject to corrosion and a deposited coating on the substrate, the deposited coating having silicon, and corrosion resistance.