公开(公告)号：US20150211800A1

公开(公告)日：2015-07-30

申请号：US14425549

申请日：2013-08-20

Applicant: Soitec

Inventor： Christophe Gourdel ,  Alexandre Barthelemy

IPC: F27D5/00

CPC classification number: F27D5/0037

Abstract: This support device has a central axis and includes: three uprights extending substantially parallel to the central axis, a plurality of series of support members spaced along the central axis, each series of support members comprising three support members adapted to support one wafer of the plurality of wafers and extending in different essentially longitudinal directions transverse to the central axis, each support member being mounted directly on a separate upright, this support device being remarkable in that the directions of the three support members of each series of support members are concurrent at a point on the central axis.

Abstract translation: 该支撑装置具有中心轴线并且包括：基本上平行于中心轴线延伸的三个立柱，沿着中心轴线间隔开的多个一系列支撑构件，每个系列支撑构件包括三个支撑构件，其适于支撑多个 的晶片并且沿与中心轴线横截的不同的基本上纵向方向延伸，每个支撑构件直接安装在单独的直立上，该支撑装置显着，其中每个支撑构件的三个支撑构件的方向在一个 指向中心轴。

公开(公告)号：US09679799B2

公开(公告)日：2017-06-13

申请号：US14441473

申请日：2013-09-25

Applicant: Soitec

Inventor： Christophe Gourdel ,  Oleg Kononchuk

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/324

CPC classification number: H01L21/7624 ,  H01L21/324 ,  H01L21/76251 ,  H01L21/84

Abstract: The present disclosure relates to a process for fabricating a plurality of semiconductor-on-insulator structures, the insulator being a layer of silicon dioxide having a thickness smaller than 50 nm, each structure comprising a semiconductor layer placed on the silicon dioxide layer, the fabrication process comprising a step of heat treating the plurality of structures, which heat treatment step is designed to partially dissolve the silicon dioxide layer, the heat treatment step being carried out in a non-oxidizing atmosphere and the pressure of the non-oxidizing atmosphere being lower than 0.1 bar.

公开(公告)号：US09835377B2

公开(公告)日：2017-12-05

申请号：US14425549

申请日：2013-08-20

Applicant: Soitec

Inventor： Christophe Gourdel ,  Alexandre Barthelemy

IPC: F27D5/00

CPC classification number: F27D5/0037

Abstract: A support device that has a central axis and includes three uprights extending substantially parallel to the central axis, a plurality of series of support members spaced along the central axis, each series of support members comprising three support members adapted to support one wafer of the plurality of wafers and extending in different essentially longitudinal directions transverse to the central axis, each support member being mounted directly on a separate upright, this support device being remarkable in that the directions of the three support members of each series of support members are concurrent at a point on the central axis.

公开(公告)号：US20150311110A1

公开(公告)日：2015-10-29

申请号：US14441473

申请日：2013-09-25

Applicant: SOITEC

Inventor： Christophe Gourdel ,  Oleg Kononchuk

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/324

CPC classification number: H01L21/7624 ,  H01L21/324 ,  H01L21/76251 ,  H01L21/84

Abstract: The present disclosure relates to a process for fabricating a plurality of semiconductor-on-insulator structures, the insulator being a layer of silicon dioxide having a thickness smaller than 50 nm, each structure comprising a semiconductor layer placed on the silicon dioxide layer, the fabrication process comprising a step of heat treating the plurality of structures, which heat treatment step is designed to partially dissolve the silicon dioxide layer, the heat treatment step being carried out in a non-oxidizing atmosphere and the pressure of the non-oxidizing atmosphere being lower than 0.1 bar.

Abstract translation: 本公开涉及一种用于制造多个绝缘体上半导体结构的方法，所述绝缘体是厚度小于50nm的二氧化硅层，每个结构包括置于二氧化硅层上的半导体层，制造 该方法包括对多个结构进行热处理的步骤，该热处理步骤设计成部分溶解二氧化硅层，该热处理步骤在非氧化性气氛中进行，非氧化性气氛的压力较低 超过0.1巴。

公开(公告)号：US09875914B2

公开(公告)日：2018-01-23

申请号：US14898937

申请日：2014-06-11

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/762 ,  H01L21/673 ,  H01L21/02 ,  H01L21/225 ,  H01L21/687

CPC classification number: H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in an oxide of a dielectric diffuses through an active layer reacts with semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

公开(公告)号：US20160372342A1

公开(公告)日：2016-12-22

申请号：US14898937

申请日：2014-06-11

Applicant: SOITEC

Inventor： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC: H01L21/67 ,  H01L21/762 ,  H01L21/02 ,  H01L21/687 ,  H01L21/225

CPC classification number: H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving the plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in the oxide of the dielectric diffuses through the active layer reacts with the semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

Abstract translation: 一种方法包括以下步骤：a）设置适于接收多个结构的室，b）将气流循环到室中，使得室具有非氧化气氛，c）多个 高于该阈值的结构，电介质的氧化物中存在的氧扩散通过有源层与活性层的半导体材料反应并产生挥发性材料，该过程值得注意的是步骤b）是 使得气流在多个结构之间的循环速率大于挥发性物质扩散到气流中的速率。